Indexlist

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
Abbreviations; Index of	[1], [2],
Absolute temperature	[1],
Accidental discoveries	[1],
Accumulation	[1], [2],
Accumulators	[1],
Activity instead of concentration	[1],
Advanced	[1], [2],
Aeral density	[1],
Alignment for steppers	[1],
Alignment in lithography	[1],
Alloys (as conductors)	[1],
Amorphization by ion implantation	[1],
Amorphous metals	[1],
Amorphous silicon	[1],
Amperes law	[1],
Angular momentum	[1],
Anisotropic eching	[1],
Anode; battery	[1],
Anodic oxidation	[1],
Anti-ferromagnetic materials	[1],
Anti-reflection coating	[1],
Antiferromagnets	[1],
Arsine	[1],
Aspect ratio	[1],
Atom polarization	[1],
Attenuation index; of light	[1],
B,
Backbone 1	[1],
Backbone 2	[1],
Backbone I module	[1], [2],
Backbone II module	[1], [2],
Band gap	[1],
Barium titanate	[1],
Barrel reactor	[1],
Base of bipolar transistor	[1],
Basics modules	[1], [2],
Batch process	[1],
Batteries	[1], [2], [3],
Battery; weight	[1],
Beer; and decay of excited states	[1],
Beweglichkeit; Definition	[1],
Bipolar transistor	[1],
Bipolar transistors	[1],
Birds beak	[1],
Black box; dielectric as	[1],
Bloch wall	[1],
Bohr magneton	[1],
Bohrs model	[1],
Bold script for index words	[1], [2],
Boltzmann distribution	[1], [2],
Bonding techniques	[1],
Books: Askeland; The Science and Engineering of Materials	[1],
Books: Fasching, Werkstoffe für die Elektrotechnik	[1],
Books: Hummel, Electronic Properties of Materials	[1],
Books: Jones; Materials Science for Electrical and Electronic Engineers	[1],
Books: Murarka and Peckerar Electr. Mat. Sci. + Techn.	[1],
Books: Murarka, Peckerar: Electr. Mat. Sci.+Techn.	[1],
Books: Münch, Werkstoffe der Elektrotechnik	[1],
Books: Warnes; Electronic Materials	[1],
Botzmann distribution	[1],
Buffer oxide	[1], [2],
Bulk microdefects	[1],
Buried layer	[1],
C,
CaF2 Birefringence, Purity and 157 nm Technology	[1],
Calcium fluoride lenses	[1],
Capacitor dielectric	[1],
Capacitors	[1],
Cathode (for electron beams)	[1],
Cathode ray tube	[1],
Cathode ray tubes	[1],
Cathode; battery	[1],
Cathodes	[1],
Cermet	[1],
Channel in a MOS transistor	[1],
Chemical dry etching	[1],
Chemical mechanical polishimg	[1], [2],
Chemical vapor deposition	[1],
Chemical-mechanical polishing	[1],
Chip	[1], [2],
Chip area	[1],
Chip power dissipation	[1],
Chip size development	[1],
Chips	[1],
Clausius-Mosotti equation	[1],
Cleaning of equipment	[1],
Cleanroom	[1],
cleanroom garments	[1],
Coercivity	[1],
Collector	[1],
Columns in module matirx	[1], [2],
Comparison of feature size; of ICs	[1],
Complex index of refraction	[1], [2],
Complex magnetic permeability	[1],
Complex notation; for harmonic oscillator	[1],
Conducting polymers	[1],
Conductors; non-metallic	[1],
Constantan	[1],
Contact hole	[1],
Contact materials	[1],
Contact resistance	[1], [2],
Contact voltage	[1], [2],
Contacts	[1],
Contacts between conductors	[1],
Convection	[1],
Crucible growth	[1],
Crystal anisotropy amd magnetism	[1],
Crystal defects in chips	[1],
Curie law	[1],
Curie temperature	[1], [2],
Curie-Weiss law	[1],
Current collector; in battery	[1],
Current density	[1],
Czochralski	[1],
Czochralski method of crystal growth	[1],
D,
Damping constant; for light	[1],
Damping of light	[1],
Dash process	[1], [2],
Dazugehörig, korrekt, eigentlich	[1],
Deal-Grove model	[1],
Debye equations	[1],
Debye length	[1], [2], [3], [4],
Deep ultra-violet	[1],
Defects on chips.	[1],
Density of carriers	[1],
Depletion	[1],
Depolarization factor	[1],
Depth of focus	[1],
Design rules	[1],
Diamagnetic materials	[1], [2],
Diamagnets	[1],
Dictionary English - German	[1], [2],
Dielectric as Black Box	[1],
Dielectric constant	[1], [2],
Dielectric constant; relative	[1],
Dielectric failure	[1],
Dielectric function	[1], [2], [3],
Dielectric function of water	[1],
Dielectric function; black box definition	[1], [2],
Dielectric materials	[1],
Dielectric susceptibility	[1], [2], [3],
Differential operators; in spherical coordinates	[1],
Diffusion barrier	[1], [2],
Diffusion coefficent	[1],
Diffusion current; electrical	[1],
Diffusion limited oxidation reaction	[1],
Diffusion profile	[1],
Dipole moment	[1],
Dipole resonance	[1], [2],
Dislocations; as device killers	[1],
Dispersion relation; of light in vacuum	[1],
Displacement currents	[1],
Dissipation; von Energie	[1],
Distance between charges in dipoles	[1],
Domain structure; from minimizing free enthalpy	[1],
Domain wall energy	[1],
Domain walls	[1],
Doping by diffusion	[1],
Doping; conducting polymers	[1],
Dose of ion implantation	[1],
Drain	[1],
Drain of a MOS transistor	[1],
Drift current	[1],
Drift velocity	[1],
Drift velocity; of fly swarm	[1],
Driftgeschwindigkeit	[1],
Dry etching	[1],
Dry oxidation	[1],
Dynamic random access memory	[1], [2],
E,
Easy directions (in ferromagnets)	[1],
Ecercises	[1], [2],
Eddy currents; in magnetic materials	[1],
Edge coverage	[1],
Edge rounding	[1],
Einstein-Smoluchowski relation	[1], [2],
Electrets	[1],
Electric car	[1],
Electrical breakdown	[1],
Electrical diffusion current	[1],
Electrical displacement	[1],
Electrical flux density	[1],
Electrochemical etching	[1],
Electrochemical potential	[1],
Electrochromic materials	[1],
electrolyte; in battery	[1],
Electrolytes	[1],
Electromagnetic wave; and dielectrics	[1],
Electromigration	[1],
Electron beam lithography	[1], [2],
Electron gas	[1],
Electron microscopes	[1],
Electron spin resonance	[1],
Electron tubes	[1],
Electronic grade Si	[1],
Electronic Polarization	[1],
Electrostriction	[1],
Emitter of a bipolar transistor	[1],
Energie dissipation	[1],
Energy crisis	[1],
Ensemble average	[1],
Entropy	[1], [2],
Entropy; and orientation polarization	[1],
Epitaxy	[1],
Equipment	[1],
Equivalent circuit diagram	[1], [2],
Ergodic hypothesis	[1],
Etching structures	[1],
Etching techniques	[1],
Excimer lasers; for lithography	[1],
Extinction coefficient; for electromagnetic radiation	[1],
Extreme UV lithography	[1],
F,
Feature size; of ICs	[1],
Feldstärke; statt Spannung	[1],
Fermi energy	[1], [2],
Ferrimagnetic materials; and conductivity	[1], [2],
Ferrimagnetism	[1],
Ferrimagnets	[1],
Ferromagnetic materials	[1], [2],
Ferromagnets	[1],
Ficks law	[1], [2],
Field current	[1],
Field emission	[1],
Field emission guns	[1],
Field oxide	[1], [2], [3],
Field strength	[1], [2],
Figure of merit	[1],
Figures of merit	[1],
First law of material science	[1],
First silicon	[1], [2],
Flat band MOS condition	[1],
Flat panel displays	[1],
Flat-panel display	[1],
Flats (on wafers)	[1],
Flats; on wafers	[1],
Fliegenschwarmanalogie	[1],
Float zone	[1],
Flow glass	[1],
Flux of electrical field	[1],
Focus depth	[1],
Format Hyperscript	[1], [2],
Fourier integral	[1],
Fourier integrals	[1],
Fourier Series	[1],
Fourier transform	[1], [2],
Fourier Transforms	[1],
Free electron gas model	[1],
Free enthalpy	[1],
Fresnel laws of diffraction	[1],
Friction	[1],
Friction; and energy dissipaton	[1],
Frictional force; on electron	[1],
Fuel cell	[1],
Fuel cells	[1],
Fuel injector; piezoelectric	[1],
Fundamental unit for magnetism	[1],
G,
Galvanic techniques	[1],
Gate dielectric	[1], [2],
Gate electrode	[1], [2],
Gate of a MOS transistor	[1],
Gate oxide	[1], [2], [3],
Gauss law	[1],
Generation sequence; of chips	[1],
Giant magnetoresistance effect	[1],
Giant magnetostriction	[1], [2],
Gyromagnetic relation	[1],
H,
Hall effect	[1],
Hall Koeffizient	[1],
Hall voltage	[1],
Hard directons (in ferromagnets)	[1],
Hard disc	[1],
Harmonic frequencies	[1],
Harmonic Oscillator	[1],
Harmonic systems	[1],
Heating elements	[1],
Heating with light	[1],
Holes; and thermoeffects	[1],
Hooke's law	[1],
Hyperbolic cotangent	[1],
Hyperscript; format of	[1], [2],
Hystereses losses	[1],
Hystereses losses; for ferromagnets	[1],
Hysteresis	[1],
Hysteresis curve	[1],
I,
Ig Nobel prize	[1],
Illustration modules	[1], [2],
Index of abbreviations	[1], [2],
Index of key words	[1], [2],
Index of names	[1], [2],
Index of refraction	[1], [2],
Indium tin oxide	[1], [2],
Induced dipole moment	[1], [2], [3],
Induced magnetic moment	[1],
Inductors	[1],
Injection ratio	[1],
Integrated capacitor	[1],
Integrated circuit	[1], [2], [3],
Integrated circuits	[1],
Integrated transistor	[1],
Intel	[1],
Intercalation	[1],
Interface polarization	[1],
Intermetal dielectric	[1], [2],
Internal energy	[1],
Internal gettering	[1],
Inversion	[1], [2],
Inversion center; and piezoelectricity	[1],
Inverter; and CMOS	[1],
Ion beam lithography	[1],
Ion conducting solids	[1],
Ion implantation	[1], [2],
Ionic conductors	[1], [2], [3],
Ionic polarization	[1],
Ionics	[1], [2], [3], [4], [5],
Ions	[1],
Irreversible processes	[1],
J,K,
Key word index	[1], [2],
Kramers Kronig relation	[1],
L,
Lambda Sonde	[1],
Langevin function	[1], [2],
Laptop	[1],
Large amounts of money: in chip production	[1],
Laser	[1],
Laser ablation	[1],
Lasers	[1],
Lay-out of a chip	[1],
Layer deposition by sputtering	[1],
Lead frame	[1],
Leads; on integrated circuits	[1],
Learning curve	[1],
Leitfähigkeit; spezifische	[1],
Lenz's law	[1], [2],
Li ion battery	[1],
Line	[1],
Liquid crystals	[1],
Liquid immersion lithography	[1],
Lithography	[1], [2],
Local (electrical) field	[1],
Local oxidation of Silicon	[1],
Lorentz force	[1],
Lorentz model	[1],
Low k dielectrics	[1],
Low pressure CVD	[1],
M,
Magentic (relative) permeability of material	[1],
Magnetic dipoles	[1],
Magnetic domains	[1],
Magnetic energy losses	[1],
Magnetic field strength	[1],
Magnetic flux density	[1],
Magnetic imaging	[1],
Magnetic induction	[1],
Magnetic memories	[1],
Magnetic memory	[1],
Magnetic moment	[1],
Magnetic moments of some materials	[1],
Magnetic monopoles	[1],
Magnetic permeability of the vacuum	[1],
Magnetic polarization	[1],
Magnetic resonance imaging	[1],
Magnetic storage material	[1],
Magnetic susceptibility	[1], [2], [3],
Magnetization	[1],
Magnetostriction	[1], [2],
Mask	[1],
Masking; with SiO2	[1],
Masks for lithography	[1],
Matrix of modules	[1], [2],
Matthiesen	[1],
Matthiesen rule	[1],
Maxwell equations (and dielectrics)	[1],
Mean field theory of ferromagnetism	[1],
Mean free path	[1],
Mean scattering time	[1], [2],
Mechanical contacts	[1],
Metallic glasses	[1],
Metallurgical grade Si	[1],
Metamagnet	[1],
Micromechanics	[1],
Microrelectronic and mechanical systems	[1],
Microsystems	[1],
Micrrwave oven	[1],
Minimal feature size	[1],
Mixing it in	[1],
Mobility	[1], [2],
Mobility of carriers	[1],
Mobility; and Hall effect	[1],
Mobility; expressed in fundamental terms	[1],
Module matrix	[1], [2],
Molecular Beam Epitaxy	[1],
Monopoles; magnetic	[1],
Moores law	[1],
Morphological phase boundary; in PZT	[1],
MOS transistor; basics	[1],
MOS transistors	[1],
Mu-metal	[1],
Mulit level metallization	[1],
Multi crystalline Si	[1], [2],
N,
n - channel MOS	[1],
n-channel MOS	[1],
Names: Indiex of	[1], [2],
Nano technology	[1],
Nanowires; Si	[1],
Native oxide	[1],
Negative electrode; battery	[1],
Negative resists	[1],
Nernst equation	[1], [2],
Nernst's equation	[1],
Newton fringes	[1],
Neél temperature	[1],
Neél walls	[1],
Non equilibrium thermodynamics	[1],
Non metals (as conductors)	[1],
Nordheims rule	[1],
Notation, Math	[1],
Notch; on a wafer.	[1],
Notches (on wafers)	[1],
Notebook	[1],
Numerical aperture	[1],
O,
Ohm's law	[1],
Ohmic materials	[1],
Ohmic resistor	[1],
Ohms law	[1],
Ohmsche Materialien	[1],
Ohmsches Gesetz	[1],
Orientation polarization	[1], [2],
Oxidation induced stacking faults	[1],
Oxide capacitance	[1],
Oxide CVD	[1],
Oxide deposition	[1],
Oxide Nitride-Oxide triple layer	[1],
Oxygen sensor	[1],
P,
p - channel MOS	[1],
P-n-junctions	[1],
Packaging materials	[1],
Parallel plate reactor	[1],
Paramagentism	[1],
Paramagnetic materials	[1],
Paramagnetism of the free electron gas	[1],
Paramagnets	[1],
Parasitic capacity	[1],
Parasitic transistors; in MOS	[1],
Particles	[1], [2],
Passivation; of Si devices	[1],
Pellicle	[1],
Peltier cooling elements	[1],
Peltier effect	[1],
Peltier effects	[1],
Permanent magnet	[1], [2],
Permanent magnet; ideal case	[1],
Permittivity	[1],
Permittivity constant	[1],
Perovskite structure	[1],
Phase diagram of quartz	[1],
Phononen	[1],
Phonons	[1],
Phosphine	[1],
Photo resist	[1], [2], [3],
Piezoelectric fuel injectores	[1],
Pinning; of domain walls	[1],
Planarization	[1],
Plasma	[1],
Plasma enhanced CVD	[1],
Plasma etching	[1],
Plasma oxide	[1],
Poissons equation	[1], [2],
Polarizability	[1],
Polarization	[1], [2], [3],
Polarization mechansims	[1],
Poly	[1],
Poly Si for crystal growth	[1],
Poly silicon: Variants	[1],
Polyimide	[1],
Polysilicon layers	[1],
Positive electrode; battery	[1],
Positive resist	[1],
Precession of electrons orbits	[1],
Process flow	[1],
Process integration	[1],
Process steps	[1],
Process window	[1],
Process-induced defects	[1],
Pyro electricity	[1],
PZT	[1],
Q,
Quality and quantity	[1],
Quantum theory	[1],
Quartz	[1],
Quartz oscillators	[1], [2],
Quartz; phase diagram	[1],
R,
Rapid thermal processing	[1],
Raw silicon	[1],
RC time constant	[1],
Reactive ion beam etching	[1],
Reactive ion etching	[1],
Reactive sputtering	[1],
Refraining from refractive	[1],
Relative dielectric constant	[1], [2],
Relative magnetic permeability of materials	[1], [2], [3],
Relaxation time	[1], [2], [3],
Remanence	[1],
Resist	[1], [2],
resist development	[1],
Resistors	[1],
Resists	[1],
Resolution limit	[1],
Resonance	[1],
Resonance frequency; harmonic oscillator	[1],
Reticle	[1], [2],
Richardsons equation	[1],
Rock crystal	[1],
Rows in module matrix	[1], [2],
S,
Sacrificial layer	[1],
Saturation magnetization	[1], [2],
Scanning tunneling microscopes	[1],
Scattering mechanisms	[1],
Scattering time, mean	[1],
Schottky effect	[1],
Schrödinger equation	[1],
Screen oxide	[1],
Screening charges	[1],
Seebeck effect	[1], [2],
Seebeck voltage	[1],
Seed crystal	[1],
Segregation coefficient	[1],
Selectivity in etching	[1],
Selenium	[1],
Semiconducting polymers	[1],
Semiconductor Industry Association	[1],
Sensor (solid states	[1],
Sensors	[1],
Shallow trench isolation	[1], [2],
Shrink strategy	[1],
Si precipitates	[1],
Siemens	[1],
Siemens AG	[1], [2],
Siemens process	[1],
Siemens; as measuring unit	[1],
Sign of Hall voltage	[1],
Silicide	[1],
Silicides	[1], [2],
Silicon	[1], [2],
Silicon nitride	[1],
Silicon on insulator	[1],
Silicondioxide	[1], [2],
Silicone nitride	[1],
Silicone nitride deposition	[1],
Silicone vs. Silicon	[1],
SiO2; phase diagram	[1],
Snellius	[1],
Snellius law	[1],
So crystasl	[1],
Soft magnet	[1],
Solar cells	[1], [2],
Solar grade Si	[1],
Solid angle	[1],
Solid electrolytes	[1],
Source	[1],
Source of a MOS transistor	[1],
Special conductors	[1],
Specidic resistivity	[1],
Specific conductivity	[1], [2],
Specific resistivity	[1],
Spectral density	[1],
Spectrum; from Fourier series	[1],
Spherical coordinates	[1],
Spike	[1],
Spiking	[1],
Spin	[1],
Spin-on coating	[1],
Spin-on glass	[1], [2], [3],
Spin-on technique	[1],
Sputtering	[1],
Sputtering techniques	[1],
Stepper	[1], [2],
Streuung an Defekten	[1],
Streuung an Elektronen	[1],
Streuung an Phononen	[1],
Streuung; von Elektronen	[1],
Stromdichte; statt Strom	[1],
Superconductors	[1], [2], [3],
Surface charge (in dielectrics)	[1],
Surface density	[1],
Symmetry breaking; piezoelectricity	[1],
T,
Table of Contents	[1], [2],
Tangens delta	[1],
Target	[1],
Temperature budget	[1],
Temperature coefficient of resistivity	[1],
Tetraethylorthosilicate	[1],
Texture; for magnetic properties	[1],
Themoelectric effect	[1],
Thermal equilibrium	[1],
Thermal oxidation	[1], [2],
Thermocouple	[1],
Thermocouples	[1],
Thermoelectric effects	[1],
Thermoelectric generators	[1],
Thermoelement	[1],
Thermovoltage	[1], [2],
Thomson effect	[1],
Threshold voltage	[1],
Time constant	[1],
Time constant: from RC	[1],
Titanium Nitride	[1],
Tormalin; and pyroelectricity	[1],
Transformer core material	[1],
Transistor	[1],
Transparent conductors	[1],
Trench capacitor	[1], [2],
Trichlorosilane	[1], [2],
Tungsten	[1],
Tungsten CVD	[1],
Tunnel diode	[1],
Tunneling effect	[1],
U,
Unipolar transistors	[1],
Uranium	[1],
V,
Vacuum tube	[1], [2],
Velocity (average) of carriers in a crystal	[1],
Very large scale integration	[1],
Via; connectio between two metal layers in ICs	[1],
Volta potential	[1], [2],
W,
Wacker Siltronic	[1], [2],
Wafer	[1], [2],
Wafer flat	[1],
Wafers	[1],
Water glass	[1],
Wave function	[1],
Weiss field	[1],
Weiss theory of freromagnetism	[1],
Weiss's factor	[1],
Well; for CMOS	[1],
Wet oxidation	[1],
Widerstand; spezifischer	[1],
Width of base region; parameter or speed	[1],
Wiedemann-Franz law	[1],
Work function	[1],
Wrong terms in micro electronics	[1],
X,
X-ray lithography	[1],
X-ray microscope	[1],
X-rays	[1],
Y,
Yield	[1], [2],
Z,
Zone melting	[1],