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What counts are the specific quantities:
- Conductivity s (or the specific resistivity r = 1/ s
- current density j
- (Electrical) field strength · E
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[ s] = ( Wm)1 = S/m;
S = 1/ W = "Siemens"
[ r] = Wm |
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The basic equation for s is:
n = concentration of carriers µ = mobility of carriers |
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Ohm's law states: It is valid for metals, but not for all materials |
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s (of conductors / metals) obeys (more or less)
several rules; all understandable by looking at n and particularly µ. |
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Matthiesen rule Reason: Scattering of electrons at defects (including phonons) decreases
µ. | |
r = rLattice(T) +
rdefect(N) |
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"r(T) rule": about 0,04 % increase
in resistivity per K Reason: Scattering of electrons at phonons decreases µ |
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Dr |
= |
ar · r · DT | » |
0,4% oC |
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Nordheim's rule: Reason: Scattering of electrons at B atoms decreases µ |
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Major consequence: You can't beat the conductivity of pure Ag by "tricks"
like alloying or by using other materials. (Not considering superconductors). |
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Non-metallic conductors are extremely important. |
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Transparent conductors (TCO's) ("ITO", typically oxides) |
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No flat panels displays = no notebooks etc. without ITO! |
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Ionic conductors (liquid and solid) |
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Batteries, fuel cells, sensors, ... |
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Conductors for high temperature applications; corrosive environments, .. (Graphite, Silicides,
Nitrides, ...) | |
Example: MoSi2 for heating elements in corrosive environments (dishwasher!).
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Organic conductors (and semiconductors) |
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The future High-Tech key materials? |
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Numbers to know (order of magnitude accuracy sufficient) |
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r(decent metals) about 2 mWcm.
r(technical semiconductors) around 1 Wcm.
r(insulators) > 1 GWcm. |
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No electrical engineering without conductors! Hundreds of specialized metal alloys
exist just for "wires" because besides s, other demands must be met, too: |
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Money, Chemistry (try Na!), Mechanical and Thermal properties, Compatibility with other materials,
Compatibility with production technologies, ... |
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Example for unexpected conductors being "best" compromise: |
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Poly Si, Silicides, TiN, W in integrated circuits |
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Don't forget Special Applications: |
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Contacts (switches, plugs, ...); Resistors; Heating elements; ... |
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Thermionic emission provides electron beams. The electron beam current (density)
is given by the Richardson equation: |
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j
= A · T 2 · exp – |
EA kT |
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Atheo = 120 A · cm–2 · K–2
for free electron gas model Aexp
» (20 - 160) A · cm–2 · K–2 |
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EA = work function » (2 - >6)
eV | |
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Materials of choice: W, LaB6 single crystal |
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High field effects (tunneling, barrier lowering) allow large currents at low T
from small (nm) size emitter | |
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There are several thermoelectric effects for metal junctions; always encountered
in non-equilibrium. | |
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Seebeck effect:
Thermovoltage develops if a metal A-metal B junction is at a temperature different form the "rest", i.e.
if there is a temperature gradeient | |
Essential for measuring (high) temperatures with a "thermoelement" Future use for efficient
conversion of heat to electricity ??? |
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Peltier effect: Electrical current I
through a metal - metal (or metal - semiconductor) junction induces a temperature gradient µ
I, i.e. one of the junction may "cool down". |
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Used for electrical cooling of (relatively small) devices. Only big effect if electrical heating (µ I2) is small. |
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Electrical current can conducted by ions in
- Liquid electrolytes (like H2SO4 in your "lead - acid" car battery); including
gels
- Solid electrolytes (= ion-conducting crystals). Mandatory for fuel cells and sensors
- Ion beams. Used in (expensive) machinery for "nanoprocessing".
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Challenge: Find / design a material with a "good" ion conductivity at room temperature |
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Basic principle | |
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Diffusion current
jdiff driven by concentration gradients grad(c) of the charged particles (= ions here) equilibrates with the
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jfield = s · E
= q · c · µ · E |
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Field current
jfield caused by the internal field always associated to concentration gradients of charged particles
plus the field coming from the outside | |
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Diffusion coefficient D and mobility µ are linked via theEinstein
relation; concentration c(x) and potential U(x) or field E(x) = –dU/dxby the Poisson equation. |
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– | d2U
dx2 | =
| dE
dx | = |
e · c(x)
ee0 |
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Immediate results of the equations from above are: |
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In equilibrium we find a preserved quantity, i.e. a quantity independent of x
- the electrochemical potential Vec: |
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Vec |
= const. = |
e · U(x) + | kT |
· ln c(x) |
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If you rewrite the equaiton for c(x), it simply asserts that the particles
are distributed on the energy scale according to the Boltzmann distrubution: |
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c(x) = exp – |
(Vx) – Vec kT |
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Electrical field gradients and concentration gradients at "contacts" are coupled and non-zero on a length scale given by the Debye
length dDebye | |
dDebye = |
æ ç è |
e · e0 · kT
e2 · c0 |
ö ÷ ø |
1/2 |
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The Debye length is an extremely important material parameter in "ionics"
(akin to the space charge region width in semiconductors); it depends on temperature T and in particular on
the (bulk) concentration c0 of the (ionic) carriers. |
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The Debye length is not an important material parameter in metals since it is so small that
it doesn't matter much. | |
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The potential difference between two materials (her ionic conductors) in close
contact thus... | | |
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... extends over a length given (approximately) by : |
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... is directly given by the Boltzmann distribution written for the energy: (with the
ci =equilibrium conc. far away from the contact. |
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c1 c2 |
= exp – | e · DU
kT | |
Boltz- mann |
DU = – |
kT e | · ln |
c1 c2 |
| Nernst's equation |
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The famous Nernst equation, fundamental to ionics, is
thus just the Boltzmann distribution in disguise! | |
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"Ionic" sensors (most famous the ZrO2 - based O2
sensor in your car exhaust system) produce a voltage according to the Nernst equation because the concentration of ions
on the exposed side depends somehow on the concentration of the species to be measured. |
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© H. Föll (Electronic Materials - Script)