A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| A, | |
| abbr. | Abbreviation |
| a | Activity |
| w | Angular frequency |
| ARC | Anti-reflection coating |
| AsH3 | Arsine |
| APCVD | Atmospheric pressure CVD |
| B, | |
| bcc | Body centered cubic |
| k | Boltzmanns constant |
| BPSG | Bor-Phosphorous silicite glass |
| BMD | Bulk micro defects |
| C, | |
| CRT) | Cathode ray tube |
| CRT | Cathode ray tubes |
| r | Charge density |
| CDE | Chemical dry etching |
| CMP | Chemical mechanical polishing |
| CVD | Chemical Vapor Deposition |
| CMP | Chemical-mechanical polishing |
| CMP | Chemical-Mechanical polishing |
| CD | Compact disc |
| CMOS | Complementary metal oxide semiconductor technology |
| CMOS | Complementary MOS |
| C | Coulomb |
| COPs | Crystal originated particles or pits |
| j | Current density |
| j | Current density |
| j | Current density |
| CZ | Czochralski grown crystal |
| D, | |
| i.e. | Das heißt - that's to say; in other words |
| DK | Dielectric constant |
| c | dielectric susceptibility |
| DLP | Digital light processing |
| m | Dipole moment |
| DC | Direct current |
| DRAM | Dynamic random access memory |
| E, | |
| E | Electrical field strength |
| D | Electrical flux density |
| n | Electron density |
| ESR | Electron spin resonance |
| q | Elementary charge |
| S | Entropy |
| F, | |
| fcc | Face centered cubic |
| EF | Fermienergy |
| FOX | Field oxide |
| metafiles | Files about the script |
| FPD | Flat panel display |
| FZ | Float zone crystal |
| F | Force |
| G | Free enthalpy |
| G, | |
| GOX | Gate oxide |
| GMR | Giant magneto resistance |
| GNP | Gross national product |
| H, | |
| hcp | Hexagonally close packed |
| HRTEM | High resolution transmission electron microscope |
| HF | Hydrofluoric acid |
| I, | |
| n | Index of refraction |
| ITO | Indium tin oxide |
| k | Injection ration |
| IC | Integrated circuit |
| U | Internal energy; also used for enthalpy |
| I2 | Ion implantation |
| J,K,L, | |
| PZT | Lead zirconate titanate |
| Laser | Light amplification by stimulated emission and resonance |
| LCD | Liquid crystal display |
| LOCOS | Local oxidation of Silicon |
| LLS | Localized light scattering defect |
| FL | Lorentz force |
| LPCVD | Low pressure CVD |
| M, | |
| µr | Magnetic (relative) permeability of material |
| B | Magnetic field strength |
| H | Magnetic field strength |
| B | Magnetic flux density |
| m | Magnetic moment |
| µo | Magnetic permeability of vacuum |
| J | Magnetic polarization |
| J | Magnetic polarization |
| J | Magnetic polarization |
| MRAM | Magnetic random access memory |
| MRI | Magnetic resonance imaging |
| cmag | Magnetic susceptibiity |
| M | Magnetization |
| M | Magnetization |
| 16 Mbit | Megabit |
| Tm | Melting point |
| MOS | Metal - Silicon - Semiconductor transistor |
| MOS | Metal Oxide Semiconductor |
| MG-Si | Metallurgical grade Silicon |
| ME | Microelectronic |
| MEMS | Microelectronic and mechanical systems |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility of carriers |
| MBE | Molecular beam epitaxy |
| MPB | Morphological phase boundary |
| N, | |
| NA | Numerical aperture |
| O, | |
| OSF | Oxidation induced stacking faults |
| COx | Oxide capacitance |
| ONO | Oxide-Nitride-Oxide |
| ONO | Oxide-nitride-oxide triple layer |
| P, | |
| PMOS | p-channel MOS |
| e0 | Permittivity constant |
| PH3 | Phosphine |
| PECVD | Plasma enhanced chemical vapor deposition |
| PO | Plasma oxide |
| P | Polarization |
| Q,R, | |
| RTP | Rapid thermal processing |
| RIBE | Reactive ion beam etching |
| RIE | Reactive ion etching |
| ROM | Read only memory |
| er | Relative dielectric constant; definition |
| t | Relaxation time |
| S, | |
| SEM | Scanning electron microscope |
| STM | Scanning tunneling microscope |
| kseg | Segregation coefficient |
| SIA | Semiconductor Industry Association |
| STI | Shallow trench isolation |
| S | Siemens |
| SiO2 | Silicon dioxide |
| Si3 N4 | Silicon nitride |
| SOI | Silicon on insulator |
| s | Specific conductivity |
| r | Specific resisitvity |
| r | Specific resistivity |
| s | Spin quantum number |
| SOG | Spin-on glass |
| UDD | Supply voltage of integrated circuits |
| T, | |
| ar | Temperature coefficient of resistivity |
| TEOS | Tetraethylorthosilicate |
| TI | Texas Instruments |
| theses. | Thesen (sing. thesis; plur. theses) |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscopy |
| TCO | Transparent conducting oxides |
| SiHCl3 | Trichlorosilane |
| W | Tungsten |
| U, | |
| UHV | Ultra high vacuum |
| UV | Ultra violet |
| U | Uranium |
| V, | |
| VLSI | Very large scale integration |
| V | Volume |
| W, | |
| y | Wave function |
| EA | Work function |
| X,Y,Z, | |
| e.g. | Zum Beispiel |
© H. Föll (Electronic Materials - Script)