Indexlist

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
Abbreviations; Index of	[1], [2],
Absorption coefficient; measurement	[1], [2],
Acceleration sensor; MEMS	[1],
Accidental discoveries	[1],
Accumulation	[1], [2],
Actuator; MEMS	[1],
Actuators; electrostatic	[1],
Actuators; MEMS	[1],
Actuators; thermal	[1],
Adhesion	[1],
Advanced	[1], [2],
Affordability; of solar energy	[1],
Air bags; MEMS	[1],
Air mass; solar cell	[1],
Alignment for steppers	[1],
Alignment in lithography	[1],
American president	[1],
Amorphization by ion implantation	[1],
Amorphous Si	[1],
Amorphous thin films	[1],
Anisotropic chemical etching	[1],
Anisotropic eching	[1],
Anodic oxidation	[1],
Anti-reflection coating	[1],
Applications	[1],
Area; needed for solar power	[1],
Arsenic; elemental semiconductor	[1],
Arsine	[1], [2],
Art of crystal growing	[1],
Aspect ratio	[1],
Atomic force microscope	[1], [2],
Auger recombination	[1], [2],
Average roughness	[1],
B,
Back-end; MEMS	[1],
Back-surface field; solar cell	[1],
Backbone I module	[1], [2],
Backbone II module	[1], [2],
Band gap	[1],
Band gap; ternary compounds	[1],
Band-band recombination	[1], [2],
Bandgap engineering	[1],
Bandgap type; ternary compound	[1],
Bandgap; defining quality	[1],
Barrel reactor	[1],
Base of bipolar transistor	[1],
Base; of solar cell	[1], [2],
Basics modules	[1], [2],
Batch process	[1], [2],
Beamer	[1],
Beamers; and MEMS	[1],
Better; central credo	[1],
Bio fuel	[1],
Bipolar transistor	[1],
Bipolar transistors	[1],
Birds beak	[1],
Black art; CIGS solar cells	[1],
Black art; wet etching	[1],
Blue ray disc	[1],
Bold script for index words	[1], [2],
Bonding techniques	[1],
Books: Heuberger	[1],
Books: Muench	[1],
Books: Ohrring	[1],
Books: Smith	[1], [2],
Bosch process	[1],
Bosch: and MEMS	[1],
Buckling; of thin films	[1],
Buffer layer; solar cell	[1],
Buffer oxide	[1], [2],
Bulk microdefects	[1],
Bulk Si solar cell	[1],
Buried layer	[1],
C,
Cantilevers; and MEMS	[1],
Capacitive sensing	[1],
Capacitor dielectric	[1],
Capillary forces; MEMS	[1],
Car; and power	[1],
Carrier type and concentration; measurement	[1],
Casimir Effect; and NEMS	[1],
Casting; multi-crystalline Si	[1],
Cavities; and MEMS	[1],
Central credo; semiconductor technology	[1],
Chalcogenides; semiconductor	[1],
Channel in a MOS transistor	[1],
Cheaper; central credo	[1],
Chemical dry etching	[1],
Chemical etching; anisotropic	[1],
Chemical mechanical polishing	[1], [2],
Chemical properties	[1],
Chemical vapor deposition	[1],
Chemical-mechanical polishing	[1], [2],
Chemisorbtion	[1],
Chip	[1],
Chip area	[1],
Chip power dissipation	[1],
Chip size development	[1],
Chip; definition	[1],
Chip; factory for making	[1],
Chips	[1],
Chips; as components	[1],
CIGS production	[1],
Cleaning of equipment	[1],
Cleanroom	[1], [2],
cleanroom garments	[1],
Cleavage planes in semiconductors	[1],
Climate catastrophe	[1],
Climate change; and ST	[1],
Collector	[1],
Columnar grains in multi-crystalline Si	[1],
Columns in module matirx	[1], [2],
Comparison of feature size; of ICs	[1],
Compliant substrates	[1],
Components; and semiconductor technology	[1],
Compound semiconductors	[1], [2],
Compromising; the art of making solar cells	[1],
Concentrator solar cell	[1],
Conductivity; measurement	[1],
Conjugated bonds; org. semiconductors	[1],
Constant current generator; solar cell	[1],
Consumption; of energy	[1],
Contact angle	[1],
Contact hole	[1],
Contact resistance	[1],
Contacts; and solar cells	[1],
Convection	[1],
Copper-Indium-Gallium-Selenide; solar cell	[1], [2], [3],
Coriolis force	[1],
Corrosion resistance; measurements	[1],
Cost decrease; solar cell	[1],
Costs; of solar energy	[1], [2], [3],
Critical current density	[1], [2],
Critical siez; for nuclei	[1],
Cross-sensitivity;_sensor	[1], [2],
Crucible growth	[1],
Crystal defects in chips	[1],
Crystal detector radio	[1],
Crystral structures; of most semiconductors	[1],
Cu - In - Ga - Se - S compound	[1],
Cu - In - Se	[1],
Current matching; multi-junction solar cell	[1],
Czochralski	[1],
Czochralski method of crystal growth	[1],
Czochralski method; crystal growth	[1],
D,
Damped driven oscillator; and MEMS	[1],
Dangling bonds	[1], [2], [3],
Dash process	[1], [2], [3],
Deal-Grove model	[1],
Deep level recombination channel	[1],
Deep levels	[1],
Deep ultra-violet	[1],
Defect properties	[1],
Defect recombination	[1], [2],
Defects on chips.	[1],
Deflection detection; MEMS	[1],
Density and porosity; measurement	[1], [2],
Depletion	[1],
Depth of focus	[1],
Design rules	[1],
Designers	[1],
Desorption	[1],
Diamond structure	[1],
Diamond; elemental semiconductor	[1],
Dictionary English - German	[1], [2],
Dielectric breakdown field strength; measurements	[1],
Dielectric constant; of semiconductors	[1],
Dielectric failure	[1],
Dielectric function	[1],
Dielectric function; measurement	[1],
Diffractrometer, neutron; and Si	[1],
Diffusion barrier	[1], [2],
Diffusion lenght; IU characteristics	[1], [2],
Diffusion limited oxidation reaction	[1],
Diffusion profile	[1],
Diffusion; solar cell	[1],
Digital light processing	[1], [2],
Digital micromirror device	[1],
Digital versatile disc	[1],
Direct energy consumption	[1],
Direct recombination	[1], [2],
Direct sun light	[1],
Directionality of sunlight	[1],
Discontinuity; hetero junctions	[1],
Disloactions; and stress relaxation	[1],
Dislocations; as device killers	[1],
Display; OLED	[1],
Displays; optoelectronic	[1],
Doping by diffusion	[1],
Doping organic semiconductors	[1],
Doping; prime technical property	[1],
Dose of ion implantation	[1],
Drain	[1],
Drain of a MOS transistor	[1],
Driven damped oscillator; and MEMS	[1],
Dry etching	[1],
Dry etching; MEMS	[1],
Dry oxidation	[1],
Dynamic random access memory	[1], [2],
E,
Earth	[1],
Ecercises	[1], [2],
Edge coverage	[1],
Edge dislocations; and steps	[1],
Edge dislocations; misfit	[1],
Edge Isolation; solar cell	[1],
Edge rounding	[1],
Efficiency increase; solar cell	[1],
Efficiency; LED	[1],
Efficiency; of light generation	[1],
Efficiency; solar cell	[1], [2],
Efficiency;_of_solar_cell	[1],
Effusion cell	[1],
Elastic moduli; thin films	[1], [2],
Electrical break down field strength	[1],
Electrical breakdown	[1],
Electrical properties; thin films	[1], [2],
Electrochemical etching	[1],
Electrolyte; solar cell	[1],
Electromigration	[1],
Electron beam lithography	[1], [2],
Electron microcopes; for seeing	[1],
Electron microscope; scanning	[1],
Electronic grade Si	[1],
Electrostatic actuators	[1],
Elements; and semiconductors	[1],
Ellipsometer	[1],
Ellipsometry	[1],
Emerging technology; MEMS	[1],
Emitter of a bipolar transistor	[1],
Emitter; of a solar cell	[1], [2],
Emitter; of solar cell	[1],
Enabling device; Laser	[1],
Enabling technology; MEMS	[1], [2],
Energieeinspeisegesetz	[1],
Energy consumption	[1],
Energy crisis; and ST	[1],
Energy harvesting	[1],
Energy pay back time	[1],
Energy pay-back time; solar cells	[1],
Energy plants	[1],
Energy; definition	[1],
Energy; solar cell	[1],
Engineer mode	[1],
Epitaxial growth	[1],
Epitaxy	[1], [2],
Equipment	[1],
Equivalent circuit diagram of a solar cell	[1],
Etching structures	[1],
Etching techniques	[1],
Excimer lasers; for lithography	[1],
Exciton; and LED	[1],
Exciton; LED	[1],
Expansion of Si; at crystallization	[1],
Extreme UV lithography	[1],
F,
Feature size; of ICs	[1],
Feed_back;_Laser	[1],
Feed_back;_Laser_	[1],
Fermi level pinning	[1],
Field oxide	[1], [2], [3],
Field strength	[1],
Fill factor, of a solar cell	[1], [2],
Fill factor; solar cell	[1],
First Laser condition	[1],
First law of material science	[1],
First silicon	[1], [2],
Fitting parameters; solar cell	[1],
Flat band MOS condition	[1],
Flat panel display	[1],
Flat panel display; OLED	[1],
Flat panel displays	[1],
Flats (on wafers)	[1],
Flats; on wafers	[1],
Float zone	[1], [2],
Flow glass	[1],
Focus depth	[1],
Force; capacitive	[1],
Format Hyperscript	[1], [2],
Fracture; for stress relaxation	[1],
Fracture; measurement	[1],
Frank-van der Merve growth mode	[1],
Fraunhofer Institute for Si Technology	[1],
Friction; MEMS	[1],
Front end; MEMS	[1],
Fundamental absorption	[1],
G,
g-sensors; MEMS	[1],
Galvanic techniques	[1],
Gate dielectric	[1], [2],
Gate electrode	[1], [2],
Gate of a MOS transistor	[1],
Gate oxide	[1],
Gate_oxide	[1],
Gate_oxide_	[1],
Gear wheels; and MEMS	[1],
General properties of thin films; measurement	[1],
Generation sequence; of chips	[1],
Geometry and topology; measurement	[1],
Geometry; thin film	[1],
Germanium; crystal growth	[1],
Germanium; elemental semiconductor	[1],
Gettering	[1],
Gettering; solar cell	[1],
Global properties of solar cells	[1],
Gold leaf	[1],
Graetzel cell	[1],
Graetzel solar cell	[1],
Green house effect; and ST	[1],
Grid parity	[1],
Grid; solar cell	[1],
Gyro; process integration	[1],
H,
Hall coefficent	[1],
Heating with light	[1],
Hetero junction; CIGS	[1],
Hetero junctions	[1],
Hetero-junction; CIGS solar cell	[1],
Hexagonal structure	[1],
High explosives; and Si	[1],
High injection approximation	[1],
High resolution TEM	[1],
High-efficiency multi-junction solar cells	[1],
High-rate plasma etching	[1],
Highest occupied molecular orbital	[1],
Homo junction	[1],
Human hair; as thinness gauge	[1],
Humans	[1],
Hydrogen passivation	[1], [2],
Hyperscript; format of	[1], [2],
I,
Illustration modules	[1], [2],
Index grating	[1],
Index of abbreviations	[1], [2],
Index of key words	[1], [2],
Index of names	[1], [2],
Index of refraction; ternary compound	[1], [2], [3], [4],
Infra red optics	[1],
Injection ratio	[1],
Inkjet	[1],
Input; to sensor	[1],
Integrated capacitor	[1],
Integrated circuit	[1], [2], [3], [4],
Integrated circuits; and semiconductor properties	[1],
Integrated transistor	[1],
Intel	[1],
Interference color: thin film	[1],
Intergrated circuit	[1],
Intermetal dielectric	[1], [2],
Internal gettering	[1],
Intrinsic length scales	[1],
Inversion	[1], [2], [3],
Inverter; and CMOS	[1],
Ion beam lithography	[1],
Ion getter pumps	[1],
Ion implantation	[1], [2],
Island growth mode	[1],
J,
Jet engine; and power	[1],
Joule; definition	[1],
Junctions; and solar cells	[1],
K,
Key word index	[1], [2],
Kilogram standard; and Si	[1],
Knudsen effusion cell	[1],
L,
Large amounts of money: in chip production	[1],
Laser	[1],
Laser ablation	[1],
Laser diodes	[1],
Laser; and semiconductor property	[1],
Lattice constant ternary compounds	[1],
Lay-out of a chip	[1],
Layer deposition by sputtering	[1],
Layer plus island growth mode	[1],
Layer-by-layer growth mode	[1],
Layered semiconductors	[1],
Leads; on integrated circuits	[1],
Learning curve	[1], [2],
Li ion batteries; and porous Si	[1],
Life time; of LED's	[1],
Light emission	[1],
Light emitting diodes	[1], [2], [3],
Light; and power	[1],
Light; and solar cells	[1],
Light_emitting_diodes	[1], [2],
Limits of solar cell efficiency	[1],
Line	[1],
Liquid crystal display	[1], [2], [3], [4], [5],
Liquid encapsulation technique	[1], [2],
Liquid immersion lithography	[1],
Lithography	[1], [2],
Load management; solar cell	[1],
Load resistance; solar cell	[1],
Load; on solar cells	[1],
Local oxidation of Silicon	[1],
Local properties of solar cells	[1],
Low k dielectrics	[1],
Low pressure CVD	[1],
Lowest unoccupied molecular orbital	[1],
Lubrication; importance of	[1],
Lubrication; MEMS	[1],
Lumen; definition of unit	[1],
M,
Magic; and semiconductor technology	[1],
Magnetic resonance tomography	[1],
Magnetic sensing	[1],
Maser	[1],
Mask	[1],
Masking; with SiO2	[1],
Masks for lithography	[1],
Master Graph; for semiconductors	[1],
Materials Research Society	[1],
Materials Scientists	[1],
Matrix of modules	[1], [2],
MBE	[1],
Measuring IV characteristics of solar cells	[1],
Measuring thin film thickness	[1],
Mechanical properties; measurement	[1], [2],
Melting point density anomaly, of Si	[1],
Membranes; and MEMS	[1],
MEMS products	[1],
MEMS specialities	[1],
Metallurgical grade Si	[1],
Metamaterials	[1],
Micro crystalline Si solar cell	[1],
Micro Electro Mechanical Systems	[1],
Micro electronic and mechanical systems; and semiconductor properties	[1],
Microelectronic; definition	[1],
Microfluidics	[1],
Micropipes; in SiC	[1],
Microrelectronic and mechanical systems	[1],
Minimal feature size	[1],
Mirrors, x-ray; and Si	[1],
Mirrors; Laser	[1],
Misfit dislocations	[1],
Misfit; and epitaxial growth	[1],
Mismatch thermal expansion coefficient	[1],
Misorientation; od substrates	[1],
Mobility; measurement	[1],
Module matrix	[1], [2],
Modules; solar cell	[1],
Molecular beam epitaxy	[1], [2], [3],
Money; and semiconductor technology	[1],
Money; and solar cells	[1],
Money; integral part of ST	[1],
Monochromatic light ; Laser	[1],
Moore's law	[1], [2],
Moore's law break down	[1],
MOS technology	[1],
MOS transistor; basics	[1],
MOS transistors	[1],
Movement; detection im MEMS	[1],
Mulit level metallization	[1],
Multi crystalline Si	[1], [2],
Multi crystalline solar cell	[1],
Multi junction solar cell	[1],
N,
n - channel MOS	[1],
n-channel MOS	[1],
Names: Indiex of	[1], [2],
Nano technology	[1],
Nanoparticles	[1],
Nanowires	[1],
Nanowires; Si	[1],
Native oxide	[1],
Necking process	[1],
Negative resists	[1],
Neutron diffractometer; and Si	[1],
Newton fringes	[1],
Nichia	[1],
Non-linear optical properties; measurement	[1],
Notch; on a wafer.	[1],
Notches (on wafers)	[1],
Nucleation of thin films	[1],
Nuclei; for thin film growth	[1],
Numerical aperture	[1],
O,
Oil resources	[1],
Open circuit voltage; solar cell	[1], [2],
Open circuit; solar cell	[1],
Optical fibres	[1],
Optical properties; thin films	[1], [2],
Optical sensing	[1],
Optical sensor	[1],
Optical sensors	[1],
Optics	[1],
Optics; thin film	[1],
Optimal working point; solar cell	[1], [2],
Optoelectronic, and thin films	[1],
Optoelectronics	[1],
Optoelectronics defined	[1],
Optoelectronics_	[1],
Organic conductor	[1],
Organic LED's	[1],
Organic light emitting diode	[1], [2],
Organic semiconductors; solar cells	[1], [2], [3],
Oscillator; and MEMS	[1],
Osram	[1],
Oxidation induced stacking faults	[1],
Oxide capacitance	[1],
Oxide CVD	[1],
Oxide deposition	[1],
Oxide Nitride-Oxide triple layer	[1],
P,
p - channel MOS	[1],
Packaging MEMS	[1],
Parallel plate reactor	[1],
Parameter space; etching	[1],
Parasitic capacity	[1],
Parasitic transistors; in MOS	[1],
Particles	[1],
Particles_	[1],
Passivation, of dangling bonds	[1],
Passivation; of Si devices	[1],
Passivation; solar cell	[1],
Pellicle	[1],
Penetration depth; of light	[1],
Phase boundary; hetero junction	[1],
Phase coherence; Laser	[1],
Phase diagram of quartz	[1],
Phosphine	[1], [2],
Phosphorous elemental semiconductor	[1],
Photo current; in junction	[1],
Photo potential; of junction	[1],
Photo resist	[1], [2], [3],
Photon; and quasi particles	[1],
Photonic crystals; and Si	[1],
Physical vapor transport; for SiC crystal growth	[1],
Physisorption	[1],
Piezoelectric materials; and MEMS	[1],
Piezoelectric_effect	[1],
Piezoresistive effect	[1],
Planarization	[1],
Planarization; and MEMS	[1],
Planet	[1],
Plasma	[1],
Plasma enhanced CVD	[1],
Plasma etching	[1],
Plasma etching; MEMS	[1],
Plasma oxide	[1],
Plastic deformation; stress relief	[1], [2],
pn-junction; for solar cells	[1],
POCl process	[1], [2],
Polariton; uses	[1],
Poly	[1],
Poly Si for crystal growth	[1],
Poly silicon: Variants	[1],
Polyimide	[1],
Polysilicon layers	[1],
Polytypes; of SiC	[1],
Polytypie	[1],
Porous silicon	[1],
Positive resist	[1],
Power plant	[1],
Power; defintion	[1],
Power; solar cell	[1],
Power;_and_optoelectronics	[1],
Pressure sensor; MEMS	[1],
Price per function	[1],
Primary energy	[1],
Printing contacts; solar cell	[1],
Process flow	[1],
Process integration	[1],
Process steps	[1],
Process window	[1],
Process-induced defects	[1],
Processing time; solar cell	[1],
Product; result of ST	[1],
Products	[1],
Products; and semiconductor technology	[1],
Products; MEMS	[1],
Properties; thin film	[1],
Pumping a Laser	[1],
Pumping, Laser	[1],
Q,
Quantity; of energy	[1],
Quantum efficiency; LED's	[1],
Quantum wire	[1],
Quantum wire; Si	[1],
Quartz	[1],
Quartz; phase diagram	[1],
Quasi Fermi energy	[1],
Quasi particles	[1], [2], [3],
Quaternary compound semiconductors	[1],
R,
Radio frequency = high frequency	[1],
Radio frequency identification device	[1],
Radius of curvature; film stress	[1],
Rapid thermal processing	[1],
Raw silicon	[1],
RC time constant	[1],
Reacitvity; measurement	[1],
Reactive ion beam etching	[1],
Reactive ion etching	[1],
Reactive sputtering	[1],
Reactivity of Si	[1],
Recombination center	[1],
Recombination channel	[1], [2],
Recombination coefficient	[1],
Recombination volume	[1],
Recombination zone	[1], [2],
Reconstruction_surface	[1],
Red-Green-Blue	[1],
Reflectometry	[1],
Reliability; and MEMS	[1],
Resist	[1], [2],
resist development	[1],
Resists	[1],
Resolution limit	[1],
Resonance; in MEMS gyros	[1],
Reticle	[1], [2],
Reticles	[1],
Reverse dark current; solar cell	[1],
RF MEMS	[1],
Rock crystal	[1],
Roor mean square; for measuring roughness	[1],
Rough substrates	[1],
Roughness; average	[1],
Roughness; root mean square	[1],
Rows in module matrix	[1], [2],
Rutherford back scattering	[1],
S,
Sacrificial layer	[1],
Sacrificial layers	[1],
Samsung	[1],
Saving the world	[1],
Scanning electron microscope	[1],
Scanning Tunneling Microscope	[1], [2], [3],
Scanning_electron_microscope	[1],
Screen oxide	[1],
Screen-printing	[1],
Secondary energy	[1],
Seed crystal	[1],
Segregation coefficient	[1],
Selectivity in etching	[1],
Selectivity; of etching rates	[1],
Selectivity;_sensor	[1],
Selenium; elemental semiconductor	[1], [2], [3],
Semiconductor Industry Association	[1],
Semiconductor Laser	[1],
Semiconductors; and components or products	[1],
Sensor; MEMS	[1],
Sensors; and semiconductor properties	[1],
Sensors; MEMS	[1],
Series resistance	[1],
Series resistance; solar cells	[1], [2], [3],
Shallow trench isolation	[1], [2],
Short circuit current; solar cell	[1], [2], [3],
Short circuit; solar cell	[1],
Shrink strategy	[1],
Shunt resistance	[1],
Shunt resistance; solar cell	[1],
Shunt resistor	[1],
Shunt; in solar cells	[1],
Si precipitates	[1],
Siemens	[1],
Siemens AG	[1], [2],
Siemens process	[1], [2],
Signal LED's	[1], [2],
Silicide	[1],
Silicon	[1], [2],
Silicon nitride	[1],
Silicon on insulator	[1], [2],
Silicon; elemental semiconductor	[1],
Silicondioxide	[1], [2],
Silicone nitride	[1],
Silicone nitride deposition	[1],
Sintering contacts; solar cells	[1],
Sintering; for solar cell contacts	[1],
SiO2; phase diagram	[1],
Slave; and power	[1],
Slave; as energy source	[1],
Snell's law	[1],
So crystasl	[1],
Solar cell; amorphous Si	[1],
Solar cell; and semiconductor property	[1],
Solar cells	[1],
Solar cells; alterative substrates	[1],
Solar cells; as market drivers	[1],
Solar cells; thin film	[1],
Solar energy	[1],
Solar grade Si	[1],
Source	[1],
Source of a MOS transistor	[1],
Space chareg region; of solal cell	[1],
Specific heat; measurement	[1],
Sphalerite	[1], [2], [3],
Spike	[1],
Spiking	[1],
Spin-on coating	[1],
Spin-on glass	[1], [2], [3],
Spin-on technique	[1],
Spontaneous emission of a photon	[1],
Sputtering	[1],
Sputtering techniques	[1],
Staebler-Wronski effect	[1],
Standard international unit	[1],
Standing wave, Laser	[1],
Stepper	[1], [2],
Steps; atomic	[1],
Sticking coefficient	[1], [2],
Stiction	[1],
Stiction; and gas etching	[1],
Stimulated emission of a photon	[1],
Stoney formula	[1],
Stop planes; anisotropic etchung	[1],
Storage; of energy	[1],
Stranski-Krastanov growth mode	[1],
Stress and strain; measurement	[1],
Stress avoidance; MEMS	[1],
Stress relaxation	[1],
Stress, strain detection; MEMS	[1],
Sun	[1],
Surface cleaning; solar cell	[1],
Surface reconstruction	[1],
Surface roughening; solar cell	[1],
Surface tension	[1],
T,
Table of Contents	[1], [2],
Tandem cells	[1],
Target	[1],
Teflon: bad adhesion	[1],
Temperature budget	[1],
Terawatt; the global power unit	[1],
Ternary compound semiconductors	[1],
Terra	[1],
Tetraethylorthosilicate	[1],
Thermal actuators	[1],
Thermal conductivity	[1], [2], [3],
Thermal couples; MEMS	[1],
Thermal expansion coefficient; measurement	[1], [2],
Thermal properties; measurement	[1],
Thermal ransfer	[1],
Thermal_oxidation	[1],
Thermal_oxidation_	[1],
Thermoelectric coefficients	[1],
Thermoelectric devices; and semiconductor property	[1],
Thick film technology; definition	[1],
Thickness, roughness; measurements	[1],
Thin film Si solar cell	[1],
Thin film solar cells	[1],
Thin film technology; definition	[1],
Thin film; meaning	[1],
Thin films; special structures	[1],
Thin flims	[1],
Three level system	[1],
Threshold voltage	[1],
Time constant	[1],
Time constant: from RC	[1],
Titanium Nitride	[1],
Toaster; and power	[1],
Topology; thin film	[1],
Transistor radio	[1],
Transistors; in IC	[1],
Transmisison electron microscope	[1],
Transmission electron microscope	[1],
Transparent conductive oxide; solar cell	[1],
Trench_capacitor	[1],
Trench_capacitor_	[1],
Trichlorosilane	[1],
Trichlorosilane_	[1],
Triple junction solar cell	[1],
Tungsten	[1],
Tungsten CVD	[1],
Two diode model; of solar cell	[1],
U,
Ultra-high vacuum; MBE	[1],
Ultraviolet light	[1],
Uncertainty relaltion; for Lasers	[1],
Uniformity: measurement	[1],
Unipolar transistors	[1],
Universal solvent; Si as	[1],
Uranium	[1],
V,
van der Waaks bonding	[1],
Very large scale integration	[1],
Via; connectio between two metal layers in ICs	[1],
Viscous flow; and stress relaxation	[1],
Visible light	[1],
Vollmer-Weber growth mode	[1],
W,
Wacker Siltronic	[1], [2],
Wafer	[1], [2],
Wafer flat	[1],
Wafer, definition	[1],
Wafer; Si	[1],
Wafers	[1],
Wafer_bonding;_MEMS	[1],
Warpage; of substrates	[1],
Watch, mechanical; and Si	[1],
Water glass	[1],
Watt; definition	[1],
Wavelength; LED's	[1],
Well; for CMOS	[1],
Wet oxidation	[1],
Wetting	[1],
Wetting angle	[1], [2],
White light; and LED	[1],
Width of base region; parameter or speed	[1],
Workfunction; measurement	[1],
Working point; of solar cell	[1],
World; saving the	[1],
Wrong terms in micro electronics	[1],
Wurtzite	[1],
Wurtzite; definition	[1],
Würth, Reinhold	[1],
X,
X-ray lithography	[1],
X-ray mirrors; and Si	[1],
Y,
Yield	[1], [2],
Yield; in chip factory	[1],
Z,
Zinc blende	[1], [2],
Zinc blende; definition	[1],
Zone melting	[1],