A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| A, | |
| abbr. | Abbreviation |
| AM 1.5 | Air mass |
| AM 1.5 | Air mass 1.5 |
| AC | Alternating current |
| a-Si | Amorphous Si |
| ARC | Anti-reflection coating |
| ASIC | Application specific IC |
| AsH3 | Arsine |
| APCVD | Atmospheric pressure CVD |
| AFM | Atomic force microscope |
| B, | |
| BSF | Back surface field |
| BPSG | Bor-Phosphorous silicite glass |
| BMD | Bulk micro defects |
| C, | |
| CRT | Cathode ray tube |
| CCD | Charge coupled device |
| CDE | Chemical dry etching |
| CMP | Chemical mechanical polishing |
| CVD | Chemical Vapor Deposition |
| CMP | Chemical-mechanical polishing |
| CAU | Christian-Albrechts-University in Kiel |
| CD | Compact disc |
| CMOS | Complementary metal oxide semiconductor technology |
| CMOS | Complementary MOS |
| CIS | Copper-Indium-Selenide |
| COPs | Crystal originated particles or pits |
| c-Si | Crystalline Si |
| CIGS | Cu - Ga - In - Se system; solar cells |
| CIGS | Cu-In/Ga-Se based solar cell |
| CZ | Czochralski grown crystals (Si) |
| CZ | Czochralski grown crystal |
| D, | |
| DOE | Department of energy |
| DVD | Digital Video Digital Video / Versatile Disc |
| DLP | Digital_Light_Processing |
| DC | Direct current |
| DRAM | Dynamic random access memory |
| DRAM | Dynamic random access memory |
| E, | |
| ESP | Electronic stability program |
| EEG | Energieeinspeisegesetz |
| EU | European union |
| F, | |
| fcc | Face centered cubic |
| fF/g | femto Farad per g |
| FOX | Field oxide |
| metafiles | Files about the script |
| FF | Fill factor; solar cell |
| FZ | Float zone crystal |
| FZ | Float zone grown crystals (Si) |
| ISIT | Fraunhofer Institute for Si Technology |
| FAQ | Frequently asked questions |
| G, | |
| GOX | Gate_oxide |
| GHz | Gigahertz |
| GNP | Gross national product |
| liquid manure | Gülle |
| H, | |
| hcp | Hexagonal close packed |
| HF | High frequency |
| HID | High intensity discharge |
| HRTEM | High resolution TEM |
| HR | High Resolution TEM |
| HRTEM | High resolution transmission electron microscope |
| HOMO | Highest occupied molecular orbital |
| HF | Hochfrequenz |
| HF | Hydrofluoric acid |
| I, | |
| ITO | Indium tin oxide |
| IR | Infra red |
| IR | Infrared |
| k | Injection ration |
| IC | Integrated circuit |
| IC | Integrated circuit |
| I2 | Ion implantation |
| J,K,L, | |
| PZT | Lead zirconate titanate |
| LASER | Light amplification by stimulated emission of radiation |
| LED | Light emitting diode |
| LED's | Light emitting diode |
| LED's | Light_emitting_diode |
| LCD | Liquid crystal display |
| LCD's | Liquid crystal display |
| LCD | Liquid crystal display |
| LCD | Liquid crystal display |
| LCD | Liquid crystal display |
| LEC | Liquid encapsulation technique |
| LOCOS | Local oxidation of Silicon |
| LLS | Localized light scattering defect |
| LPCVD | Low pressure CVD |
| LUMO | Lowest unoccpied molecular orbital |
| lm | Lumen |
| M, | |
| 16 Mbit | Megabit |
| MOS | Metal - Silicon - Semiconductor transistor |
| MOCVD | Metal Organic CVD |
| MOS | Metal Oxide Semiconductor |
| MOS | Metal-oxide-semiconductor |
| MG-Si | Metallurgical grade Silicon |
| MEMS | Micro Electro Mechanical Systems |
| MEMS | Micro electronic and mechanical systems |
| MBE | Molecular beam epitaxy |
| mc | Multi_crystalline_(s) |
| N, | |
| NEMS | Nano Electro Mechanical Systems |
| NA | Numerical aperture |
| O, | |
| UOC | Open circuit voltage |
| UOC | Open circuit voltage |
| OMEMS | Optical MEMS |
| OPC | Optical proximity correction |
| OLED | Organic LED |
| OLED | Organic LED |
| OLED's | Organic light emitting diode |
| OSF | Oxidation induced stacking faults |
| COx | Oxide capacitance |
| ONO | Oxide-Nitride-Oxide |
| ONO | Oxide-nitride-oxide triple layer |
| ONO | Oxide-nitride-oxide layer sandwich |
| P, | |
| PMOS | p-channel MOS |
| PC | Personal Computer |
| PSM | Phase shift mask |
| PH3 | Phosphine |
| PV | Photo voltaic |
| PVT | Physical vapor transport |
| PECVD | Plasma enhanced chemical vapor deposition |
| PO | Plasma oxide |
| Q, | |
| Q | Q-factor |
| R, | |
| RADAR | RAdio Detection And Ranging |
| RF | Radio frequency |
| RF | Radio frequency |
| RF MEMS | Radio frequency microelectromechanical systems |
| RTP | Rapid thermal processing |
| RIBE | Reactive ion beam etching |
| RIE | Reactive ion etching |
| RHEED | Reflection High Energy Electron Diffraction) |
| R&D | Research and Development |
| RGS | Ribbon growth on substrate |
| RT | Room temperature |
| RMS | Root mean square |
| RBS | Rutherford back scattering |
| S, | |
| SEM | Scanning electron microscope |
| STM | Scanning tunneling microscope |
| SEM) | Scanning_electron_microscope |
| STM) | Scanning_electron_microscope_ |
| kseg | Segregation coefficient |
| SIA | Semiconductor Industry Association |
| ST | Semicondurctor technology |
| RSE | Series resistance; solar cell |
| STI | Shallow trench isolation |
| ISC | Short circuit current |
| SiO2 | Silicon dioxide |
| Si3 N4 | Silicon nitride |
| SOI | Silicon on insulator |
| SC | Solar cell, Si |
| SCR | Space charge region |
| SOG | Spin-on glass |
| SRAM | Static random access memory |
| SKE | Steinkohleneinheit |
| SQUIDS | Superconducting quantum interference devices |
| UDD | Supply voltage of integrated circuits |
| T, | |
| TV' | Television |
| TMAH | Tetra-Methyl Ammonium Hydroxide |
| TEOS | Tetraethylorthosilicate |
| TI | Texas Instruments |
| a | Thermal expansion coefficient |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscopy |
| TCO | Transparent conductive oxide |
| SiHCl3 | Trichlorosilane |
| W | Tungsten |
| U, | |
| UV | Ultra violet |
| UHV | Ultra-high vacuum |
| UV | Ultraviolet |
| U | Uranium |
| V, | |
| VLSI | Very large scale integration |
© H. Föll (Semiconductor Technology - Script)