III-V Highlights

	Here are a few Highlights concerning emerging uses of III-V semiconductors
		Northrop Grumman Corp. (Redondo Beach, Calif.) is claiming a new world record for transistor speed with an indium phosphide-based high-electron-mobility transistor (InP HEMT). The device has a maximum frequency of operation of >1 THz (1000 GHz). Researchers at Northrop Grumman’s Space Technology sector, led by Richard Lai, detailed how they developed the terahertz-speed transistor in a technical paper delivered at the 2007 International Electron Devices Meeting (IEDM), held recently in Washington, D.C Semiconductor International, 12/21/2007
		Fujitsu announced a GaN based HF power chip (around 100 GHz, 1.3 W) in 2010; here is a link to the article. Semiconductor International, Oct./Nov. 2010
		In "Solid State Technology", Jan. 2012, some interesting information concerning LED production is given. Highlights are: Yield for 1 mm² (GaN based) devices is around 25 %. Largest cost factor is he package and the Gold! Average size moved form about 0.5 mm² to 1 mm² because more than doubling of light output foe same packaging costs. However, yield problem.. Fab cost around 100 Mil. Euro; half of that for MOCVD.