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Sputter deposition |
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Plasma technique Þ Vacuum + high voltage
(and possible high frequency): complicated and expensive | |
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Layers amorphous to highly defective Þ needs usually
annealing after deposition. | |
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Very versatile because of easy control of layer composition by target composition |
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Decent depositioen rates possible. Particularly suited to conductors. |
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Coverage is not conformal! |
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Ion implantation |
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Depth (< ca. 1 µm) and dose precisely controllable. |
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Very compley and expensive | |
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Method od choice for making doped layers. |
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Introduces defects or destroys crystallinity Þ annealing
at high T (> 800 oC) is a must | |
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There are many more techniques for producing thin layers |
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 | | Comparing edge coverage |
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Evaporation. Relatively simple but limited as to materials and edgencoverage |
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Molecular beam epitaxy. (MBE) Standard for III-V's |
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Spin-on techniques ("Sol- Gel"). Used for making photo resist layers; occasionally
for others | |
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Galvanics. Kind of crude but necessary for Cu interconnects in modern IC's |
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| Edge coverage may be the decisive property! |
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© H. Föll (Semiconductor Technology - Script)
