Indexlist

A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,

A,
Abbreviations; Index of	[1],
Absolute temperature	[1],
Absorption coefficient	[1],
Acceptors	[1],
Accumulation	[1],
Accumulation; in heterojunctions	[1],
Advanced	[1],
Affinity	[1],
Aluminothermic process for Si production	[1],
Amphoteric doping	[1],
Anisotropic dissolution	[1],
Annealing of defects	[1],
Annealing; after ion implantation	[1],
Approximations; free electron gas	[1],
Area density	[1],
Area emitting LED	[1],
Arrhenius plot	[1],
Auger recombination	[1], [2], [3],
Avalanche breakdown	[1],
Axial modes	[1],
B,
Backbone I module	[1],
Backbone II module	[1],
Ballistic carriers	[1],
Band bending	[1],
Band gaps	[1],
Band-band recombination channel	[1],
Base of a crystal	[1],
Base of bipolar transistor	[1],
Base transit time	[1],
Basics modules	[1],
Bayer Solar	[1],
Beer's law	[1],
Bell laboratories; the most famours research labs in the world around 1960	[1],
Beweglichkeit; Definition	[1],
Bipolar transistor	[1],
Black body radiation	[1],
Black box; for p-n junctions	[1],
Blakeslee	[1],
Bloch theorem	[1],
Bloch wave	[1],
Blue LEDs	[1],
Bold script for index words	[1],
Bose-Einstein distribution	[1],
Bound exciton	[1],
Boundary conditions; for free electron gas	[1],
Bragg condition	[1],
Bravais lattices	[1],
Brillouin construction	[1],
Brillouin zones	[1],
Buffer layer	[1],
Built-in potential	[1],
Bulk microdefects	[1],
Burgers vector	[1], [2],
Burrus type LED	[1],
C,
Capacitance of a SCR	[1],
Capacitance of SCR	[1], [2],
Capture cross section	[1],
Carborundum	[1],
Carrier statistics	[1],
Casting of Silicon	[1],
Cathodoluminescence	[1],
CELLO technique	[1],
Chemical force	[1],
Chemical potential	[1],
Chemoluminescence	[1],
Cis configuration	[1],
Collector	[1],
Columns in module matirx	[1],
Compliant substrates	[1],
Conducting Polymers	[1],
Conductivity	[1], [2], [3],
Conjugated polymer	[1], [2],
Conservation of crystal momentum	[1],
Conservation of particles/charge	[1],
Constant Potential	[1],
Contamination	[1],
Continuity assumption	[1],
Continuity equation	[1], [2],
Crystal momentum	[1], [2], [3],
Crystal momentum conservation	[1],
Crystal originated particles or pits	[1],
Current density	[1],
Current efficiency of light generation	[1],
Current-voltage characteristics of a p-n-junction	[1],
D,
Dangling bonds	[1],
de Broglie equation	[1],
Debye lenght	[1],
Debye length	[1], [2],
Debye temperature	[1],
Deep levels	[1],
Deep states	[1],
Defect etches	[1],
Density of electrons; basic formula	[1],
Density of States	[1], [2],
Depletion	[1], [2],
Device size considerations	[1],
Device speed	[1],
Diamond; as heat sink	[1],
Dictionary English - German	[1],
Dielectric relaxation time	[1], [2],
Differential gain factor	[1],
Diffusion capacitance	[1], [2],
Diffusion coefficent	[1],
Diffusion coefficients of carriers	[1], [2],
Diffusion current in p-n junction	[1],
Diffusion current; electrical	[1],
Diffusion length	[1], [2], [3],
Diffusion profile	[1],
Diode equation	[1], [2],
Diode type heterojunction	[1],
Direct dissolution	[1],
Direct semiconductors	[1],
Directional solidification	[1],
Discontinuity; in the band diagram	[1],
Dislocations in Si	[1],
Dispersion function	[1],
Distribution function	[1],
Donors	[1],
Dopant activation	[1],
Doping	[1], [2],
Doping, of SiC	[1],
Dose	[1],
Double hetero junction	[1],
Drift current in a p-n junction	[1],
Drift velocity	[1], [2], [3],
Drift velocity; of fly swarm	[1],
Driftgeschwindigkeit	[1],
Ductility of Si; at high temperatures	[1],
Dynamic carrier equilibrium	[1],
Dynamic equilibrium	[1],
E,
Ecercises	[1],
Edge emitting LED	[1], [2],
Effctive mass	[1],
Effective density of states	[1], [2],
EFG solar Si	[1],
Einstein	[1],
Einstein coefficient for stimulated absorption	[1], [2],
Einstein relation	[1], [2],
Einstein-Smoluchowski relations	[1],
Elastic scatteirng	[1],
Electrical diffusion current	[1],
Electroluminescence	[1],
Electrons in semiconductors	[1],
Emission probability for electrons	[1], [2],
Emitter of a bipolar transistor	[1],
Emitter-push effect	[1],
Energy gap	[1],
Energy splitting; at the BZ	[1],
Ensemble average	[1],
Enthalpy	[1],
Entropy	[1],
Entropy of recombination/generation	[1],
Equilibrium condition	[1],
Equipartition theorem	[1],
Equivalent circuit diagram	[1],
Ergodic hypothesis	[1],
Errorfunction	[1],
Esaki	[1],
Etching	[1],
Ewald construction	[1],
Exciton	[1], [2],
Excitons	[1],
External efficiency	[1],
External efficiency of light generation	[1],
F,
Fabry-Perot resonator	[1],
Feldstärke; statt Spannung	[1],
Fermi energy	[1],
Fermis golden rule	[1],
Ficks laws	[1], [2],
Field current in a p-n junction	[1],
Field strength	[1],
First Laser condition	[1],
Flat band	[1],
Fliegenschwarmanalogie	[1],
Fluorescence	[1],
Format Hyperscript	[1],
Forward current in a p-n junction	[1],
Fourier transform of lattice	[1], [2],
Free electron gas	[1],
free electron gas model	[1], [2],
Free energy	[1],
Free enthalpy	[1],
Frequency range of LEDs	[1],
Fresnel laws	[1],
Fundamental absorption	[1], [2],
G,
Gain coefficient	[1], [2],
Gain driven Laser	[1],
Gauss	[1],
Gauss law	[1],
Generation current in a p-n junction	[1],
Generation currents from the SCR	[1], [2], [3],
Generation life time	[1], [2],
Generation rate	[1], [2],
Generation rate in direct semiconductors	[1],
Generation rate; by photons	[1],
Gibbs energy	[1],
Gold; in Si	[1],
Grain boundaries in Si	[1],
Group velocity	[1], [2], [3],
H,
Hamilton operator	[1],
Heterojunctions	[1],
Heterostructures	[1],
High injection	[1],
High injection approximation	[1],
High injection case	[1],
Holes in semiconductors	[1],
Hydrogen passivation	[1],
Hyperscript; format of	[1],
I,
Illustration modules	[1],
Imref	[1],
Index driven Laser	[1],
Index grading	[1],
Index of abbreviations	[1],
Index of key words	[1],
Index of names	[1],
Index of refraction; of semiconductors	[1],
Indirect semiconductors	[1],
Injection luminescence	[1],
Injection ratio	[1],
Intensity of light	[1],
Interface charge	[1],
Interface chemistry	[1],
Interface energy	[1],
Interface states	[1], [2],
Interface structure	[1],
Interface, electronic properties	[1],
Interface, structural properties	[1],
Internal energy	[1],
Intrinsic conductivity of Silicon	[1],
Intrinsic loss coefficient	[1],
Intrinsic Semiconductors	[1], [2],
Inversion	[1], [2], [3],
Ion implantation	[1],
Ionized dopants	[1],
Isoelectronic doping	[1],
Isotropic dissolution	[1],
Isotype heterojunction	[1],
Isotype junctions	[1],
J,
Junctions; simple	[1],
K,
Key word index	[1],
Kick-out diffusion mechanism	[1],
L,
Large signal response.	[1],
Laser	[1], [2],
Laser condition	[1],
Lattice misfit	[1],
Life time	[1], [2], [3],
Life time; formula for the	[1],
Light bulbs; replacement	[1],
Local equilibrium	[1],
Localized excitons	[1],
Localized light scattering defect	[1], [2],
Longitudional modes	[1],
Luminescence	[1],
M,
Majority carriers	[1],
Maser	[1],
Mass action law	[1], [2], [3],
Matrix of modules	[1],
Maxwell equations	[1],
Mean free path	[1],
Mean scattering time	[1],
Melting point anomaly of Si	[1],
Metallurgical junction	[1],
metamaterial	[1],
Micro electronic and mechanical systems	[1],
Micro systems	[1],
Micropipes; in SiC	[1],
Miller indices	[1],
Minority carrier life itme	[1], [2], [3],
Minority carriers	[1],
Misfit dislocations	[1],
Mobility	[1], [2], [3],
Mobility of carriers	[1],
Mobility of electrons; in Si	[1],
Modes of Lasers	[1],
Modulation doping	[1],
Module matrix	[1],
Modules of solar cells	[1],
Moissanite (= natural SiC)	[1],
Monomode Laser	[1],
Motorola	[1], [2],
Multi quantum well	[1],
Multiple quantum well	[1],
N,
n-type semiconductor	[1], [2],
Names: Indiex of	[1],
Net generation of carriers	[1],
Newtons Laws	[1],
O,
Ohmic contacts	[1],
Ohmic resistor	[1],
Ohms law	[1],
Optica lefficiency of light generation	[1],
Optical properties, of SiC	[1],
Optoelectronics defined	[1],
Optoelectronics; and SiC	[1],
P,
p-n-junction	[1],
Parts per quatrillion	[1],
Passivation	[1],
Passivation	[1],
Pauli exclusion principle	[1],
Peierls	[1], [2],
Peierls instability	[1], [2], [3],
Peierls instability and superconductivity	[1], [2],
Peierls transition	[1],
Perfect semiconductors	[1],
Periodic boundary conditions; for the free electron gas	[1],
Phase noise; in Lasers	[1],
Phase space	[1],
Phase velocity	[1], [2],
Phonons	[1], [2],
Phonons; and interaction with electrons	[1],
Phosphorescence	[1],
Photoluminescence	[1],
Photonic crystals	[1],
Physical vapor transport; for SiC crystal growth	[1],
PIN diode	[1],
Piss; for etching Si	[1],
Plasma	[1],
Point defects in Si	[1],
Poisson equation	[1], [2],
Polymorphism	[1],
Polytypes; of SiC	[1],
Potential; for free electron gas	[1],
Proecipitates in Si	[1],
Pumping a Laser	[1],
Pure diffusion currents	[1],
Pythagoras	[1],
Q,
Quantum efficiency of light generation	[1], [2],
Quantum numbers; in the free electron gas model	[1],
Quantum state	[1],
Quantum theory	[1],
Quantum well	[1],
Quantum wells	[1],
Quasi Fermi energies	[1],
Quasi Fermi energy	[1],
Quasi wave vector	[1],
Quasi-particles	[1],
R,
Radiation resistance; of SiC devices	[1],
Radiative channels	[1],
Ramsdell notation; for SiC polytypes	[1],
Rapid thermal processing	[1], [2],
Reciprocal lattice	[1], [2],
Recombination channels	[1], [2],
Recombination coefficient	[1],
Recombination current	[1],
Recombination currrent in a p-n junction	[1],
Recombination life time	[1],
Recombination rate	[1], [2],
Recombination rate; in non-equilibrium	[1],
Recombination volume	[1],
Recombination zone	[1], [2], [3],
Reduced band diagrams	[1],
Refractive index of semiconductors	[1],
Replacing light bulbs	[1],
Resistivity	[1],
Reverse current in a p-n junction	[1],
reverse current; in diodes	[1],
Rows in module matrix	[1],
Ruby	[1],
S,
Saturated electron drift velocity	[1],
Scaling factor	[1],
Scaling laws	[1],
Scattering	[1],
Scattering cross section	[1], [2],
Scattering mechanisms	[1],
Schroedinger equation	[1],
Schrödinger equation	[1],
Second Laser condition	[1],
Secondary mass spectroscopy	[1],
Selective etching	[1],
Series resistance	[1],
Shallow levels	[1],
Shockley-Read-Hall recombination	[1], [2],
Shunt resistance	[1],
SiC	[1],
SiC, doping of	[1],
SiC, electronic properties	[1],
SiC; optical properties	[1],
Single quantum well	[1], [2],
Sintering of Si	[1],
Small diodes	[1],
Small signal response	[1],
Smoluchowski	[1],
Snellius law	[1],
Solar cell	[1],
Solar cell market	[1],
Solar cells	[1], [2],
Solar grade Si	[1],
Solubility limit	[1],
Solubility; dopants in Si	[1],
Space charge layer	[1],
Space charge region	[1],
Specific conductance	[1],
Specific heat of Si	[1],
Specific resistance	[1],
Spherical solar cells from TI	[1],
Spin	[1],
Spin; of the electron	[1], [2],
Spintronic	[1],
Spontaneous emission of a photon	[1], [2],
State; Quantum state	[1],
Steady state (and non-equilibrium)	[1],
Stimulated Emission	[1],
Stimulated emission of a photon	[1],
Stored charge	[1],
Stromdichte; statt Strom	[1],
Strong inversion	[1],
Superradiant LEDs	[1],
Surface concentration; calculation from volume concentration	[1],
Surface density	[1],
Surface emitting LEDs	[1],
Surface generation velocity	[1],
Surface recombination velocity	[1],
Surface states	[1],
Switching behavior (of a diode)	[1],
Symmetry breaking; in polymer conductivity	[1],
T,
Table of Contents	[1],
Thermal conductivity of Si	[1],
Thermal expansion coefficient of Si	[1],
Thermalization	[1],
Thermodynamic potentials	[1],
Thin film solar cells	[1],
Three level system	[1],
Threshold density	[1],
Threshold value for lasing ; gain coefficient	[1], [2],
top	[1],
Total energy (in Schroedinger equation)	[1],
Trans configuration#	[1],
Transients (in current)	[1],
Transients (in voltage)	[1],
Transit time	[1],
Transition rates	[1],
Transparency density	[1],
Transverse modes	[1],
Tunnel diodes	[1],
U,
Ulterviolet catastrophe	[1],
Uncertainty relaltion; for Lasers	[1],
V,
Varactors	[1],
von Karman	[1],
W,
Wacker Siltronic	[1], [2],
Warpage	[1],
Wave function	[1],
Wave length of free electron	[1],
Wave vector	[1], [2], [3],
Weak inversion	[1],
Width of base region; parameter or speed	[1],
Wigner-Seitz cells	[1],
Wire saws	[1],
Workfunction	[1],
Working point	[1],
X,Y,
Yield stress	[1],