A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| A, | |
| abbr. | Abbreviation |
| c | Affinity |
| AC | Alternating current |
| B, | |
| Eg | Band gap |
| k | Boltzmanns constant |
| BZ | Brillouin zone |
| BMD | Bulk microdefects |
| C, | |
| r | Charge density |
| CP | Chemical polish or concentrated piss |
| m | Chemical potential |
| CP | Concentrated piss |
| s | conductivity |
| CIS | Copper Indium Di-selenide |
| P | Crystal momentum |
| COP | Crystal originated particles or pits |
| Si-c | Crystalline Si; used in the solar industry |
| hcu | Current efficiency of light generation |
| D, | |
| LDb | Debye length |
| DOS | Density of states |
| D(E) | Density of States |
| td | Dielectric relaxation time |
| D | Diffusion coefficient |
| L | Diffusion length |
| DC | Direct current |
| vD | Drift velocity |
| E, | |
| EFG | Edge defined Film-fed (crystal) Growth |
| me | Electron mass |
| EC | Elementary cell |
| E | Energy |
| EPROM | Eraseable and Programable Random Acess Memories |
| hext | External efficiency of light generation |
| F, | |
| EF | Fermi energy |
| metafiles | Files about the script |
| G | Free enthalpy |
| G, | |
| gn | Gain coefficient |
| G | Generation rate |
| H, | |
| hcp | Hexagonal close packed |
| I, | |
| IMPATT | Impact avalanche transit time |
| ITO | Indium tin oxide |
| k | Injection ration |
| ai | Intrinsic loss coefficient |
| J,K,L, | |
| LASER | Light Amplification by Stimulated Emission and Radiation |
| LED | Light emitting diode |
| LLS | Localized light scattering defects |
| LLS | Localized light scattering defect |
| M, | |
| MOS | Metal-Oxide-Semiconductor |
| MEMS | Micro electronic and mechanical systems |
| t | Minority carrier life time |
| µ | Mobility |
| m | Mobility of carriers |
| MQW | Multiple quantum wells |
| N,O, | |
| hopt | Optical efficiency of light generation |
| P, | |
| ppqt | Parts per quatrillion |
| ppt | Parts per trillion |
| PL | Photo luminescence |
| PVT | Physical vapor transport |
| h/2p | Plancks Constant / 2 pi |
| PVC | Polyvinylchloride |
| Q, | |
| hqu | Quantum efficiency of light generation |
| QW | Quantum well |
| q.e.d. | Quod erat demonstrandum (what should be proven) |
| R, | |
| RTA | Rapid thermal annealing |
| RTP | Rapid thermal processing |
| gh,k,l | Reciprocal lattcie vector |
| R | Recombination rate |
| r | Resistivity |
| S, | |
| K | Scaling factor |
| s | Scattering cross section |
| SQW | Single quantum well |
| SFQR | Site flatness quality requirements |
| SCR | Space charge region |
| Sg | Surface generation velocity |
| Sr | Surface recombination velocity |
| S-web | Suspended Web |
| T, | |
| neth | Threshold density |
| g th | Threshold value for the gain coefficient |
| T= | Translation vector of a crystal lattice |
| neT | Transparency density |
| U,V,W, | |
| l | Wave length |
| k | Wavevektor |
| d | Width of space charge region |
| Q | Workfunction |
© H. Föll (Semiconductors - Script)