A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| A, | |
| AF | Atomare Fehlstellen |
| B, | |
| µ | Beweglichkeit |
| bcc | Body centered cubic |
| bcc | Body centered cubic |
| BZ | Brillouin-Zone |
| C, | |
| CZ | Czochralski grown crystals (Si) |
| D, | |
| e | Dehnung |
| DK | Dielektrizitätskonstante; relative |
| DK | Dielektrizitätskonstante |
| DVD | Digital versatile disc |
| m | Dipolmoment (manchmal) |
| DC | Direct current |
| DRAM | Dynamic random access memory |
| E, | |
| E | Elastizitätsmodul |
| ET&IT | Elektrotechnik und Informationstechnik |
| S | Entropie |
| F, | |
| fcc | Face centered cubic |
| fcc | face centered cubic |
| EF | Fermienergie |
| G | Freie Energie oder Enthalpie |
| n | Frequenz (der Gitterschwingungen) |
| Füllfaktor | Füllfaktor; Solarzelle |
| G, | |
| G | Generationsrate |
| GMR | Giant magneto resistance |
| GMR | Gigantomagnetowiderstandseffekt |
| H, | |
| n | Hauptquantenzahl |
| hcp | Hexagonal close packed |
| hcp | Hexagonal close packed |
| hcp | Hexagonally close packed |
| HRTEM | High resolution transmission electron microscope |
| HRTEM | High-Resolution Transmission Electron Microscopy |
| I, | |
| IR | Infrarot |
| IC | Integrated circuit |
| IC | Integrated circuit |
| i | Interstitial |
| J,K, | |
| K | Kelvin |
| c V,i | Konzentration |
| KZ | Koordinationszahl |
| L, | |
| LED | Light emitting diode |
| LED | Light emitting diode |
| LCD | Liquid Crystal display |
| LCD | Liquid crystal display |
| LCD | Liquid Crystal display |
| M, | |
| H | Magnetic field strength |
| B | Magnetic flux density |
| µo | Magnetic permeability of vacuum |
| J | Magnetic polarization |
| MRAM | Magnetic random access memory |
| cmag | Magnetic susceptibiity |
| µr | Magnetische (relative) Permeabilität eines Materials |
| H | Magnetische Feldstärke |
| J | Magnetische Polarisation |
| m | Magnetische Quantenzahl |
| M | Magnetisierung |
| M | Magnetization |
| MWG | Massenwirkungsgesetz |
| s | Mechanische Spannung |
| s | Mechanische Spannung |
| MOS | Metal -Oxide-Semiconductor |
| MOS | Metall-Oxid-Semiconductor |
| MOS | Metall-Oxid-Semiconductor Transistor |
| N, | |
| l | Nebenquantenzahl |
| N | Newton |
| O, | |
| OC | Open circuit |
| U OC | Open circuit voltage |
| OLED | Organic light emitting diode |
| OLED | Organic light emitting diodes |
| OLED | Organic light emitting diode |
| P, | |
| ppb | parts per billion |
| ppm | Parts per million |
| ppt | parts per trillion |
| Pa | Pascal |
| PC | Personal Computer |
| h | Plancksches Wirkungsqantum |
| P | Polarisation |
| U | Potentielle Energie |
| Q,R, | |
| RF | Radio Frequency |
| RLZ | Raumladungszone |
| R | Rekombinationsrate |
| S, | |
| STM | Scanning Tunnel Microscopy |
| SWS | Semesterwochenstunden |
| USD | Source-Drain Spannung |
| SCR | Space Charge Region |
| s | Spinquantenzahl |
| r | Sprungrate |
| b | Stromverstärkung des bipolar Transistors |
| T, | |
| T | Temperatur |
| U thr | Threshold voltage ; MOS Transistor |
| TEM | Transmissionselektronenmikroskop(ie) |
| U, | |
| UV | Ultraviolett |
| V, | |
| V | Vacancy; gleich Leerstelle |
| W, | |
| W | Watt |
| X,Y,Z, | |
| ZGA | Zwischengittertaom |
© H. Föll (MaWi für ET&IT - Script)