Publications, Dissertations and Hyperscripts

Publications

Till 1992

1993-1997

1998-2000

2001-2002

2003

2004

2005

2006

2007

2008

2009

recent

  1. FÖLL, H.: Nachweis der Comptonstreuung mit Gamma Quanten. Praxis 18 (1968) 202
  2. FÖLL, H.: High-voltage electron microscope studies of low-temperature radiation damage in silicon. Inst. of Physics Conf. Series No. 23 (1975) 319
  3. FÖLL, H., KOLBESEN, B.O.: Application of HVEM to the investigation of point defect clusters in Si. Fourth Int. Conf. HVEM, Toulouse 1975, p. 273
  4. FÖLL, H., KOLBESEN, B.O., FRANK, W.: The nature of swirls and its significance for understanding point defects in Si. Phys. Stat. Sol. (a) 29 (1975) K83
  5. FÖLL, H., WILKENS, M.: A simple method for the analysis of dislocation loops. Phys. Stat. Sol. (a) 31 (1975) 519
  6. FÖLL, H., KOLBESEN, B.O.: Agglomerate von Zwischengitteratomen (Swirl-Defekte) in Silizium - Ihre Bedeutung für Grundlagenforschung und Technologie. Jahrbuch der Akademie der Wissenschaften in Göttingen (1976), p. 27 (invited paper)
  7. FÖLL, H., KOLBESEN, B.O.: Formation and nature of swirl defects in silicon. Appl. Physics 8 (1975) 319
  8. SEEGER, A., FÖLL, H., FRANK, W.: Vacancies, interstitials and their clusters in Si and Ge. Inst. of Physics Conf. Series No. 31 (1977) 12
  9. FÖLL, H., GÖSELE, U., KOLBESEN, B.O.: The formation of swirl defects in Si and by agglomeration of Si self-interstitials. J. CrystaIs Growth 40 (1977) 50
  10. FÖLL, H., GÖSELE, U., KOLBESEN, B.O.: Swirl defects in Si. Semiconductor Silicon (1977), p. 565
  11. FÖLL, H., KOLBESEN, B.O.: Advantages in the study of crystal defects in Si starting materials and devices by use of a HVEM. Semiconductor Silicon (1977), p.740
  12. FÖLL, H., WILKENS, M.: TEM studies of dislocation loops in heavy ion irradicated H.C. P. Cobalt. Phys. Stat. Sol. (a) 39 (1977) 561
  13. FÖLL, H., WILKENS, M.: The black-white vector I of small dislocation loops on TEM images. Phys. Stat. Sol. (a) 49 (1978) 555
  14. FÖLL, H., AST, D.G.: High-resolution TEM of grain boundaries in Si. Proc. Ninth Int. Congress Electron Microscopy (1978), p. 428
  15. CARTER, C.B., FÖLL, H.: The contrast from incoherent twin interfaces observed using the weak-beam technique. Scripta Met. 12 (1978) 1135
  16. FÖLL, H., CARTER, C.B., WILKENS, M.: On the contrast from stacking faults. Proc. EMSA (1979), p. 690
  17. CARTER, C.B., FÖLL, H., AST, D.G., SASS, S.: Electron microscopy and diffraction studies of grain boundaries. Proc. EMSA (1979), p. 686
  18. FÖLL, H., CARTER, C.B.: Direct TEM determination of intrinsic and extrinsic stacking fault energies in Si. Phil. Mag. 40 (1979) 497
  19. FÖLL, H., AST, D.G.: TEM observations on grain boundaries in sintered Si. Phil. Mag. 40 (1979) 589
  20. CARTER, C.B., FÖLL, H., AST, D.G., SASS, S.: E1ectron diffraction and microscopy studies of the structure of grain boundaries in Si. Phil. Mag. 43 (1981) 441
  21. FÖLL, H., CARTER, C.B., WILKENS, M.: Weak beam contrast of stacking faults in TEM. Phys. Stat. Sol. (a) 74 (1982) 353
  22. FÖLL, H.: Anodic etching of defects in p-type Si. J. Electrochem. Soc. 127 (1980) 1925
  23. FÖLL, H., GÖSELE, U., KOLBESEN, B.O.: Microdefects in Si and their relation to point defects. J. Crystal Growth 52 (1981) 907 (eingeladener Beitrag)
  24. FÖLL, H.: Anodic etching of p-type Si as a method for discriminating electrically active and inactive defects. Appl. Phys. Lett. 37 (1980) 316
  25. FÖLL, H., HO, P., TU, K.N.: Cross-sectional TEM of silicon-silicide interfaces. J. Appl. Phys. 52 (1981) 25
  26. TAN, T.Y., FÖLL, H., HU, S.M.: On the diamond-cubic to hexagonal phase transformation in Si. Phil. Mag. A 44 (1981) 127
  27. FÖLL, H., TAN, T.Y., KRAKOW, W.: Undissociated dislocations and intermediate defects in As + ion damaged silicon. Symposia Proc. MRS, "Defects in Semiconductors", eds. J. Narayan and T.Y. Tan, North Holland 1981, p. 173
  28. TAN, T.Y., FÖLL, H., MADER, S., KRAKOW, W.: A tentative identification of nature of < 113 > stacking faults in Si - model and experiment. as 27), p. 179
  29. KRAKOW, W., TAN, T.Y., FÖLL, H.: Detection of point defect chains in ion irradiated silicon. as 27), p. 185
  30. TAN, T.Y., FÖLL, H., KRAKOW, W.: Detection of extended interstitial chains in ion-damaged Si. Appl. Phys. Lett 37 (1980) 1102
  31. FÖLL, H.: Kann man Atome sehen? Funkschau 20 (1981) 53 (Sonderpreis im Funkschau Wettbewerb: Kompliziertes verständlich verstehen)
  32. KRAKOW, W., TAN, T.Y., FÖLL, H., CHERNS, D., SMITH, D.A.: Point defects and interface imaging at the atomic resolution level. Proc. 39th EMSA Meeting, eds. G.W. Bailey (Claitors Publ. Div.), Atlanta 1981, p.116
  33. TAN, T.Y., FÖLL, H., KRAKOW, W.: Intermediate defects in silicon and germanium. Inst. Phys. Conf. Ser. No. 60 (1981) 1
  34. KRAKOW, W., TAN, T.Y., FÖLL, H.: The identification of atomic defect chain configurations in ion irradiated Si by high resolution electron microscopy. as 33), p. 23
  35. CARTER, C.B., FÖLL, H.: Dissociated dislocations in < 111 > twist boundaries. Proc. Int. Conf. on Disl. Modelling of Physical Systems, eds. M.F. Ashby et al. (Pergamon Press), Gainesville (Fla) 1980, p.554
  36. EIZENBERG, M., TU, K.N., FÖLL, H.: Formation of shallow silicide contacts to Si using Pt-Si and Pd-Si alloy films. J. Appl. Phys. 52 (1981) 861
  37. EIZENBERG, M., FÖLL, H., TU, K.N.: Shallow silicide contacts formed by using codeposited Pt2Si and Pt1,2Si. Appl. Phys. Lett. 37 (1980) 547
  38. GÖSELE, U.., MOREHEAD, F., FÖLL, H., FRANK, W. STRUNK, H.: The predominant intrinsic point defect in Si: Vacancies or self-lnterstitials? Semiconductor Silicon 1981, eds. H.R. Huff et. al. (EDS, Proc. Vol. 81-5) 766
  39. WILKENS, M., FÖLL, H., CARTER, C.B.: A further comment on the weak-beam contrast of stacking faults in Si. Phys. Stat. Sol. (a) 73 (1982) K 15
  40. FÖLL, H.: Lattice imaging of silicide-silicon interfaces. Jap. J. Appl. Phys. Oyo Buturi (50th Anniversary Issue) 51 (1982) 221; invited paper in jap. language
  41. FÖLL, H.: Lattice imaging of silicides-silicon interfaces. Phy. Stat. Sol. (a) 69 (1982) 779
  42. FÖLL, H., HO, P.S., TU, K.N.: Transmission electron microscopy of the formation of nickel silicides. Phil. Mag. A 45 (1982) 31
  43. FÖLL, H., HO, P.S.: Transmission electron microscopy investigation of silicide formation on slightly oxidized silicon substrates. Appl. Phys. 52 (1981) 5510
  44. HO, P.S., SCHMIDT, P.E., FÖLL, H.: Stoichiometric and structural origin of electronic states at the Pd2Si-Si interface. Phys. Rev. Lett. 46 (1981) 782
  45. SCHMIDT, P.E., HO, P.S., FÖLL, H., RUBLOFF, G.W.: Electronic states and atomic structure at the Pd2Si-Si interface. J. Vac. Sci and Tech.
  46. FÖLL, H.: Transmission electron microscopy of Si-silicide interfaces. Extended Abstracts ESC spring meeting, Minneapolis 1981, p. 716
  47. FÖLL, H.: Discriminating electronically active and inactive defects by anodic etching. as 46), p. 781
  48. GRABMAIER, J.G., FÖLL, H., AULICH, H.A., FREIENSTEIN, B.: The supported-web method for growing silicon sheets at high velocity. Proc. 3rd Symp. on Mat. and New Processes. Techn. for Photovoltaics, eds. J.P. Dismukes et. al. (ECS Proc. Vol. 82-8), p. 391
  49. GRABMAIER, J.G., FÖLL, H., FREIENSTEIN, B., GEIM, K: Fast Si-sheet growth with the supported-web method. Proc. 4th E.C. Photovoltaic Energy Conf., eds. W.H. Bloss and G. Grassi (D. Reidel Publ. Co), Stresa 1982, p. 976
  50. FÖLL, H., KUAN, T.S.: Structural properties of silicide/Si interfaces: Transmission electron microscopy in: Metal/Si and Silicide/Si interfaces, eds. P.S. Ho and G.J. Rubloff (Elsevier), in press, invited paper (contribution finished, but book never published)
  51. TU, K.N., OTTAVIANI, G., GÖSELE, U., FÖLL, H.: Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system. J. Appl. Phys. 54 (1983) 758
  52. GRABMAIER, J.G., FALCKENBER, R., FREIENSTEIN, B., GEIM, K., FÖLL, H.: Si-ribbon growth with the S-web technique. Proc. 5th E.C. Photovoltaic Solar Energy Conf., eds. W. Palz and F. Fittipaldi (D. Reichel Publ. ), Athens 1983, p. 1058
  53. SCHMIDT, P.E., HO, P.S., FÖLL, H., TAN, T.Y.: Effects of variations of silicide characteristics on the Schottky-Barrier height of silicide-silicon interfaces. Phys. Rev. B. 28 (1983) 4593
  54. FÖLL, H., PAPP, A., KOLBESEN, B.O.: Basic aspects of process-induced defects in silicon devices. Techn. Proc. Semicon/Eur. 1984 (Zürich), p. 67 (invited paper)
  55. LEHMANN, V., FÖLL, H., BERNEWITZ, L., GRABMAIER, J.G.: A high-speed characterization technique for solar silicon. In: Proc. Flat Plate Solar Array Project Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells; Florida 1983 (JPL Publ. 84-23), (1984) 527
  56. GRABMAIER, J.G., FÖLL, H.: The S-web technique for high-speed growth of Si-sheets. as 55), p. 261
  57. FÖLL, H.: Hochtemperatur-Supraleiter als Leiterbahnmaterial. me Bd. 2 (1988) Heft 4, 166 (invited paper)
  58. LEHMANN, V., FÖLL, H.: Minority carrier diffusion length mapping in silicon wafers using a Si-electrolyte-contact. J. Electrochem. Soc., 135 (1988) 2831 E
  59. FÖLL, H., LEHMANN, V., GELSDORF, F., ZOTH, G. , GÖTTINGER, B.: In-line control of metal contamination of silicon wafers using the "electrolytical metal tracer" (ELYMAT). GME Fachbericht (Hrsgb. H. Rebstock; Productronica 1989, München), 75 (invited paper)
  60. V. LEHMANN, V. , FÖLL, H.: Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J. Electrochem. Soc., 137 (1990) 653
  61. FÖLL, H., BECKER, F.S.: Industrielle Entwicklung und Fertigung von Halbleiterbauelementen. (Teil 1 und Teil 2, 80 Seiten, 38 Figuren), in: Festkörperforschung für die Informationstechnik (Hrsgb. und Vertrieb: KFA Jülich, Zentralbibliothek), Ferienkurs 1990, p. 16.1 (invited paper)
  62. KAKOSCHKE, R., BUßMANN, E., FÖLL, H.: Modelling of wafer heating during rapid thermal processing. Applied Physics, a50 (1990) 141
  63. FÖLL. H., LEHMANN, V., ZOTH, G., GELSDORF, F., GÖTTINGER, B.: In-line monitoring of heavy metal contaminations and interface states by an imaging technique. Proc. of the Satellite Symposium to ESSDERC '89 Berlin. (Analytical Technique for Semiconductor Material and Process Characterization) (eds.: B.O. Kolbesen, D.V.Mc Caughan, W. Wandervorst) Electrochem. Soc. Proc. Vol. 90-11 (1990) 44 (invited paper)
  64. BECKER, F.S., FÖLL, H., SCHLÜTER, K.: Die Mega-Generation. mc (Magazin für Computerpraxis) 12 (1990) 60 (invited paper)
  65. FÖLL, H. WILD, B.: Polysilicon layers in modern microelectronic devices. Proc. POLYSE, Schwäbisch Hall 1990; (invited paper) Springer Proc. in Physics, Vol. 54 (Eds.: J.H. Werner und H.P. Strunk) p. 274 - 284
  66. KAKOSCHKE, R., BUßMANN, E., FÖLL; H.: The appearance of temperature nonuniformities during rapid thermal processing. Appl. Phys. A 52 (1991) 52
  67. FÖLL; H.: Properties of silicon-electrolyte junctions and their application to silicon characterization. Appl. Phys. A 53 (1991) 8 - 19
  68. BECKER, F.S., FÖLL, H.: Gigabitchips zur Jahrtausendwende?. Technische Rundschau 12 (1991) 26 - 32
  69. FÖLL, H., BECKER, F.S.: Megabitspeicher: Vom Projekt zum Produkt. Technische Rundschau 29 (1991) 44 - 51
  70. FÖLL, H., KÜCHER, P.: Definition, Charakterisierung und Bewertung von Materialien der Mikroelektronik. In: Proc.2. Symposium Materialforschung, Dresden 1991, p. 3 (invited paper)
  71. FÖLL, H.: Life time mapping with the ELYMAT technique. Proc. Symp. "Advanced Science and Technology of Si Materials", (Jap. Soc. Promotion of Science) Kona (Hawaii) 1991, p. 347 (invited paper)
  72. FÖLL, H.: Challenges of 16 Mbit DRAM technology development. Proc.15th Nordic Semiconductor Meeting, (eds. S. Franssila, R. Daananen), VTT Semiconductor Laboratory; Hämeenlinna (Finnland) 1992, p. 115 (invited paper)
  73. FÖLL, H.: Technological and economical aspects of mega-chip development. SET, Warszawa 1993, Electron Technology 26, 1 (1993) 23-34 (invited paper)
  74. FÖLL, H., LEHMANN, V., LIPPIK, W.: Characterization of single and polycrystalline silicon by extension of the ELYMAT technique. Proc. of the Satellite Symp. to ESSDERC '93 Grenoble, "Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing", (ECS Proc. Vol. 93-15, 1993), p. 252
  75. CARSTENSEN, J., LIPPIK, W., FÖLL, H.: Mapping of defect related bulk and surface properties with the ELYMAT technique. In Semiconductor Silicon/1994 (eds, H.R. Huff, W. Bergholz, K. Sumino),( ECS Proc. Vol. 94-10), San Francisco 1994, p. 1105
  76. CARSTENSEN, J., LIPPIK, W., FÖLL, H.: Mapping of defect related silicon properties with the ELYMAT technique in three dimensions. Proc. of "Semiconductor Processing and Characterization with Laser-Applications in Photovoltaics", Stuttgart 1994, Mat. Science Res. Forum Vols. 173-174, p.159
  77. GRÜNING, U., LEHMANN, V., OTTOW, S., BUSCH, K.: Macroporous silicon with a complete two dimensional photonic band gap centered at 5 µm. J. Electrochem. Soc. (1995)
  78. CARSTENSEN, J., LIPPIK, W., LIEBERT, S., KÖSTER, S., FÖLL, H.: New developments of the ELYMAT technique. Proc. of the Satellite Symp. to ESSDERC '95 Den Haag, "Analytical Techniques for Semiconductor Materials and Process Characterisation II", Electrochem.Soc. Proc. Vol. 95-30 (1995) 83-92
  79. CARSTENSEN, J., LIPPIK, W., LIEBERT, S., KÖSTER, S., FÖLL, H.: ELYMAT technique on multicrystalline silicon for solar cell application.. Proc. of the "13th European Photovoltaic Conference and Exhibition", Nice, Okt. 1995, p. 1344-1347
  80. OTTOW, S., LEHMANN, V., FÖLL, H.: Processing of three dimensional microstructures using macroporous n-type silicon. J. Electrochem. Soc. 143 (1996) , p. 385
  81. OTTOW, S., LEHMANN, V., FÖLL, H.: Development of three-dimensional microstructure processing using macroporous n-type silicon. Appl. Physics A 63 (1996), p. 153-159
  82. FÖLL, H.: Ingenieure für die Welt von morgen. (invited paper) Festschrift "25 Jahre VDI - Arbeitskreis Technik & Umwelt" (Hrsg. VDI Schleswig-Holsteinischer Bezirksverein), 1996, p. 24 - 28.
  83. POPKIROV, G. S, OTTOW, S.: In situ impedance spectroscopy of silicon electrodes during the first stages of pore formation, Journal of Electroanalytical Chemistry, 429 (1997), 47-54
  84. Abschlußbericht zum Verbundprojekt: Verbesserung des Materialverständnisses von multikristallinem Silicium für Solarzellen: Defekte in kristallinem Silicium (DIXSI), Förderkennzeichen des BMBF 0329536A - I, p. 7-12 - 7-15, (1997)
  85. BIRNER, A., GRÜNING, U., OTTOW, S., SCHNEIDER, A., MÜLLER, F., LEHMANN, V., FÖLL, H., GÖSELE, U.: Macroporous silicon: A two-dimensional photonic bandgap material suitable for the near-infrared spectral range, Physica Status Solidi (a), 165 (1)(1998) 111
  86. CARSTENSEN, J., PRANGE, R., POPKIROV, G. S., FÖLL, H.: A model of current oscillations at the Si-HF-system based on a quantitative analysis of current transients, Appl. Phys. A 67 (4) (1998) 459-467
  87. PRANGE, R., CARSTENSEN, J., FÖLL, H.: Transient current measurements on the Si-HF system as a direct image of the oxide thickness in the oscillation regime, in Proc. ECS' 193rd Meeting, San Diego 1998, 98-10, (1998) 158-170
  88. CARSTENSEN, J., PRANGE, R., FÖLL, H.: Percolation model for the current oscillation in the Si-HF system, in Proc ECS' 193rd Meeting, San Diego 1998, 98-10, (1998) 148-157.
  89. OTTOW, S., POPKIROV, G. S., FÖLL, H.: Determination of flat-band potentials of silicon electrodes in HF by means of a.c. resistance measurements, J. Electroanalytical Chemistry 455 (1998) 29-37
  90. FÖLL, H.: Multimedia in der Praxis. uni kiel 4 (1998) 1
  91. CARSTENSEN, J., PRANGE, R., FÖLL, H.: A model for current-voltage oscillations at the Silicon electrode and comparison with experimental results, J. Electrochem. Soc. 146 (3), (1999) 1134-1140
  92. RÖNNEBECK, S., CARSTENSEN, J., OTTOW, S., FÖLL, H.: Crystal orientation dependence of macropore growth in n-type silicon, Electrochem. and Solid-State Letters 2 (3), (1999) 126
  93. LEHMANN, V., RÖNNEBECK, S.: The Physics of Macropore Formation in Low-Doped p-Type Silicon, J. Electrochem. Soc. 146 (8) (1999) 2968-2975
  94. H. AL-RIFAI, M., CARSTENSEN, J., FÖLL, H.: Improvement of the efficiency of silicon solar cells by electrochemical passivation of high leakage current areas in the pn-junction, in Proc. EUROMAT 1999, Volume 13 (Wiley-VCH) (1999) 273
  95. JÄGER, C., DIECKER, C., JÄGER, W., CHRISTOPHERSEN, M., CARSTENSEN, J., FÖLL, H.: New insights into the formation of macropores in n-Si(001) and p-Si(001), in Proc. Microsc. Semicond. Mater. Conf. Oxford 1999, (Int. Phys. Conf. Ser. No. 164), (1999) 507-511
  96. FÖLL, H.: Was heißt und zu welchem Ende studiert man Materialwissenschaft?. Forschungsbericht der CAU, Frühjahr 1999
  97. JÄGER, C., FINKENBERGER, B., JÄGER, W., CHRISTOPHERSEN, M., CARSTENSEN, J., FÖLL, H. Föll: Transmission electron microscopy investigation of the formation of macropores in n- and p-Si(001)/(111), Mat. Sci. Eng. B 69-70 (2000) 199
  98. H. AL RIFAI, M., CHRISTOPHERSEN, M., OTTOW, S., CARSTENSEN, J., FÖLL, H.: Potential, temperature and doping dependence for macropore formation on n-Si with backside illumination, Journal of Porous Materials 7 (1/2/3)(2000) 33-36
  99. H. AL RIFAI, M., CHRISTOPHERSEN, M., OTTOW, S., CARSTENSEN, J., FÖLL, H.: Dependence of macropore formation in n-Si on potential, temperature, and doping, J. Electrochem. Soc. 147 (2)(2000) 627-635
  100. CARSTENSEN, J., CHRISTOPHERSEN, M., FÖLL, H.: Pore formation mechanisms for the Si-HF system, Mat. Sci. Eng. B 69-70 (2000) 23
  101. CHRISTOPHERSEN, M., CARSTENSEN, J., FEUERHAKE, A., FÖLL, H.: Crystal orientation and electrolyte dependence for macropore nucleation and stable growth on p-type-silicon, Mat. Sci. Eng. B 69-70 (2000) 194
  102. HASSE, G., CARSTENSEN, J., POPKIROV, G., FÖLL, H.: Current transient analysis of the oxidizing process in the complete anodic regime of the si-HF system, Mat. Sci. Eng. B 69-70 (2000) 188
  103. CHRISTOPHERSEN, M., MERZ, P., QUENZER, J., CARSTENSEN, J., FÖLL, H.: A new method of silicon microstructuring with electrochemical etching, Phys. Stat. Sol. (a), 182 (1), (2000) 561
  104. FÖLL, H., CARSTENSEN, J., CHRISTOPHERSEN, M., HASSE, G.: A new view of silicon electrochemistry, (invited paper) Phys. Stat. Sol. (a), 182 (1), (2000) 7
  105. CHRISTOPHERSEN, M., CARSTENSEN, J., FÖLL, H.: Crystal orientation dependence of macropore formation of p- type silicon, Phys. Stat. Sol. (a), 182 (1), (2000) 103
  106. CHRISTOPHERSEN, M., CARSTENSEN, J., FÖLL, H.: Crystal orientation dependence of macropore formation of n-type silicon, Phys. Stat. Sol (a), 182 (2), (2000) 601
  107. CHRISTOPHERSEN, M., CARSTENSEN, J., FÖLL, H.: Macropore-formation on highly doped n-type silicon, Phys. Stat. Sol. (a), 182 (1), (2000) 45
  108. HASSE, G., CHRISTOPHERSEN, M., CARSTENSEN, J., FÖLL, H.: New insights into Si electrochemistry and pore growth by transient measurements and impedance spectroscopy, Phys. Stat. Sol. (a), 182 (1), (2000) 23
  109. CARSTENSEN, J., CHRISTOPHERSEN, M., HASSE, G., FÖLL, H.: Parameter dependence of pore formation in silicon within a model of local current bursts, Phys. Stat. Sol. (a) ,182 (1), (2000) 63
  110. J. CARSTENSEN, G. POPKIROV, J. BAHR, and H. FÖLL: CELLO: An advanced LBIC measurement for solarcel l local characerization, in Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow 2000, (2000) VD3.35
  111. LANGA, S., TIGINYANU, I. M., CARSTENSEN, J., CHRISTOPHERSEN, M., FÖLL, H.: Formation of porous layers with different morphologies during anodic etching of n-InP J. Electrochem. Soc. Lett. 3 (11), (2000) 514
  112. FÖLL, H., CARSTENSEN, J., CHRISTOPHERSEN, M., HASSE, G.: A stochastic model for current oscillations in space and time at the silicon electrode, in ECS Proceedings: Pits and Pores II: Formation Properties and Significance for Advanced Materials, 36 (2000).
  113. HASSE, G, CARSTENSEN, J., and FÖLL, H.: Impedance Spectroscopy in the Si-HF system including time dependent and resonant phenomena, in ECS Proceedings: Pits and Pores II: Formation Properties and Significance for Advanced Materials, 531 (2000).
  114. RÖNNEBECK, S., OTTOW, S., CARSTENSEN, J., FÖLL, H.: Crystal orientation dependence of macropore formation in n-Si with backside-illumination in HF-electrolyte. J. of Porous Mat. 7 (2000) 353-356 (best poster award)
  115. MÜLLER, F., BIRNER, A., GÖSELE, U., LEHMANN, V., OTTOW, S., FÖLL, H.: Structuring of macroporous silicon for applications as photonic crystals. J. of Porous Mat. 7 (2000) 201-204 (best paper award)
  116. FÖLL, H., FUCHS, F.W., JÄGER, W., PAUL, F.: New study courses in engineering at the university of Kiel. Proc. 3rd UICEE Annual Conf. on Engineering Education, Hobart, Australia, Feb. 2000, p. 163 - 166
  117. PAUL, F., FÖLL, H., DOLGNER, K., JÄGER, W: New Masters Course Program in Materials Science and Engineering at the University of Kiel; 2000 SPRING MEETING PROCEEDINGS Symposium HH Materials Science and Engineering Education in the New Millenium Editors: B. London, E. Allen, A. Moll, D. Pope MRS Proceedings Volume 632
  118. FÖLL, H.: Technologietransfer und Universität. hitecSH Forschung und Technologie in Schleswig-Holstein Jahrbuch (2000), p. 64-66
  119. PAUL, F., FÖLL, H., JÄGER, W.: How to encourage young students to study engineering subjects. 4th UICEE Annual Conf. of Eng. Education, Singapore 2001
  120. S. Langa, J. Carstensen, I. M. Tiginyanu, M. Christophersen, and H. Föll: Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures, Electrochemical and Solid-State Letters, 4 (6), G50-G52, (2001)
  121. STEVENS-KALCEFF, M.A., TIGINYANU, I., M., LANGA, S., FÖLL, H., HARTNAGEL, H.L.: Correlation between morphology and cathodoluminescence in porous GaP. J. App. Phys. 89 (5), (2001) 2560-2565
  122. STEVENS-KALCEFF, M.A., LANGA, S., TIGINYANU, I. M., CARSTENSEN, J., CHRISTOPHERSEN, M., FÖLL, H.: Comparative SEM and cathodoluminescence micoranalysis of porous GaP structures, MRS Conference proceedings, 638, (2001), F5.31
  123. CHRISTOPHERSEN, M., CARSTENSEN, J., RÖNNEBECK, S., JÄGER, C., JÄGER, W., FÖLL, H..: Crystal orientation dependence and anisotropic properties of macropore formation of p- and n-type silicon, Journal of The Electrochemical Society, 148(6) , E267-E275 (2001)
  124. LANGA, S., CARSTENSEN, J., CHRISTOPHERSEN, M., FÖLL, H., TIGINYANU, I. M.: Observation of crossing pores in anodically etched n-GaAs. App. Phys. Lett. 78 (8), (2001) 1074-1076
  125. LEHMANN, V., RÖNNEBECK, S.: MEMS Techniques Applied to the Fabrication of Anti-Scatter Grids for X-Ray Imaging. Sensors and Actuators A, 95, 202 (2001)
  126. I.V. Grekhov, T.S. Agrunova, L.S. Kostina, N.M. Shmidt, H. Föll, and K.B. Kostin: "Direct bonding of silicon wafers with simultaneous dopant diffusion", in MRS Proceedings Volume 681E: Wafer Bonding and Thinning Techniques for Materials Integration, eds. T.E. Haynes, U.M. Gösele, M. Nastasi, and T. Yonehara, I5.7 (2001)
  127. LEHMANN, V., RÖNNEBECK, S.: MEMS Techniques Applied to the Fabrication of Anti-Scatter Grids for X-Ray Imaging. Technical Digest of the 14th IEEE International Conference on Micro Electro Mechanical Systems, Interlaken 2001, 84
  128. M. Hejjo Al-Rifai, J. Carstensen, and H. Föll.: A new passivation method for edge shunts of silicon solar cells, Proceedings of the 17th european conference on photovaltaics, Munich, (2001), 1424
  129. CHRISTOPHERSEN, M., MERZ, P., QUENZER, J., CARSTENSEN, J., FÖLL, H.: Deep electrochemical trench etching with organic hydrofluoric electrolytes. Sensors and Actuators A 88 (2001) 241
  130. H. Föll, "Ist der Stein der Weisen aus Silizium?", in ...und Er würfelt doch!, H. Müller-Krumbhaar, H.-F. Wagner (Eds.), Wiley-VCH, Weinheim, 2001
  131. S. Langa, J. Carstensen, I. M. Tiginyanu, M. Christophersen, H. Föll, Formation of tetrahedron-like pores during anodic etching of (100)-oriented n-GaAs, Electrochem. Solid-State Lett., 5, C14-C17, (2002)
  132. I.M. Tiginyanu, S. Langa, M. Christophersen, J. Carstensen, V. Sergentu, E. Foca, O. Rios, and H. Föll, Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds, MRS Proceedings 692, (2002), K2.7
  133. H. Foll, S. Langa, J. Carstensen, M. Christophersen, I. M. Tiginyanu, K. Dichtel, Pore Etching in Compound Semiconductors for the Production of Photonic Crystals, invited paper: Mat. Res. Soc. Symp. Proc. 722 , Editors: R.B. Wehrspohn, R. März, S. Noda, and C. Soukoulis, L6.4, (2002)
  134. M. Hejjo Al-Rifai, J. Carstensen, and H. Föll.: A simple passivation technique for the edge area of silicon solar cells improves the efficiency. Solar Energy Materials & Solar Cells 72 (2002), 327 - 333
  135. H . Föll, M. Christophersen, J. Carstensen, G. Hasse: Formation and application of porous silicon(invited review) Mat. Sci. Eng. R 39 (4) (2002) 93-141.
  136. J. Carstensen, G. Popkirov, J. Bahr, and H. Föll, CELLO: An Advanced LBIC Measurement Technique for Solar Cell Local Characterization, in Photovoltaic and Photoactive Materials - Properties, Technology and Applications, eds. J.M. Marshall and D. Dimova-Malinovska, Kluver Academic Publishers (Netherland), 321 (2002). (short version of 146)
  137. H. Föll, J. Carstensen, S. Langa, M. Christophersen, and I.M. Tiginyanu, "Photonic Crystals: the Future of Optical Communications", in Proceedings of the 3rd International Conference on Microelectronics and Computer Science, 1, Technical University of Moldova (2002).
  138. S. Lölkes, M. Christophersen, S. Langa, J. Carstensen, and H. Föll, Selforganized formation of crystallographically oriented octahedral cavities during electrochemical pore etching, Mat. Sci. Eng. B 101, 159 (2003).
  139. J. C. Claussen, J. Carstensen, M. Christophersen, S. Langa, H. Föll, Self-organized pore formation and open-loop-control in semiconductor etching, Chaos, 13(1), 217, (2003).
  140. H. Föll, J. Carstensen, S. Langa, M. Christophersen, I.M.Tiginyanu, Porous III-V compound semiconductors: formation, properties and comparison to silicon, (invited paper at PSST 2002), phys. stat. sol. (a) 197(1), 61 (2003)
  141. S. Langa, M. Christophersen, J. Carstensen, I. M. Tiginyanu, H. Föll, Single crystalline 2D porous arrays obtained by self-organization in n-InP, phys. stat. sol. (a) 197(1), 77 (2003)
  142. S. Langa, J. Carstensen, M. Christophersen, I. M. Tiginyanu, H.Föll, Voltage oscillations - an emergent property at high density pore growth,phys. stat. sol. (a) 197(1), 186 (2003)
  143. M. Christophersen, S. Langa, J. Carstensen, I. M. Tiginyanu, H.Föll, A comparison of pores in silicon and pores in III-V compound materials,phys. stat. sol. (a) 197(1), 197 (2003)
  144. M. Christophersen, J. Carstensen, K. Voigt, and H. Föll, Organic and Aqueous Electrolytes Used for Etching Macro- and Mesoporous Silicon, phys. stat. sol. (a) 197(1), 34 (2003)
  145. I.M. Tiginyanu, I.V. Kravetsky, S. Langa, G. Marowsky, J. Monecke, and H. Föll, Porous III-V Compounds as Nonlinear Optical Materials, (invited paper at PSST 2002),phys. stat. sol. (a) 197(1), 549 (2003)
  146. J. Carstensen, G. Popkirov, J. Bahr, and H. Föll, CELLO: An Advanced LBIC Measurement Technique for Solar Cell Local Characterization, Solar Energy Materials & Solar Cells 76599 - 611, (2003)
  147. S. Langa, I.M. Tiginyanu, M. Christophersen, J. Carstensen, and H.Föll, Self-organized growth of single crystals of nanopores, Appl- Phys. Lett., 82(2), 278 - 280, (2003)
  148. M. H. Al Rifai, O. Breitenstein, J. P. Rakotoniaina, and J. Carstensen, Edge shunt passivation in silicon solar cells by chemical etching investigated by lock-in thermography and CELLO, in Proceedings of the 3. World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 2003, (2003)
  149. LANGA, S., CHRISTOPHERSEN, M., CARSTENSEN, J., TIGINYANU, I.M., Föll, H., Electrochemical pore etching in Ge, phys. stat. sol. (a) 195 (3), (2003), R4-R6
  150. FÖLL, H., LANGA, S., CARSTENSEN, J., CHRISTOPHERSEN, M., TIGINYANU, I.M. Review: Pores in III-V semiconductors. (invited review) Advanced Materials, 15(3) (2003) 183 - 198
  151. FÖLL, H. Buchbesprechung zu "Morde Macht Moneten (von Dierk Raabe) Physik Journal
  152. I.M. Tiginyanu, V.V. Ursaki, V.V. Zalamai, S. Langa, S. Hubbard, D. Pavlidis, and H. Föll, Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching, Appl. Phys. Lett, 83 (8), (2003) , 1551
  153. H. Föll, S. Langa, J. Carstensen, S. Lölkes, M. Christophersen, I.M. Tiginyanu, Engineering Porous III-Vs, III-Vs Review, 16 (6) (2003), 42
  154. M. Christophersen, S. Langa, J. Carstensen, P.M. Fauchet, and H. Föll, "Self-induced Voltage Oscillations and Diameter Modulations During Pore Formation in Si and InP" in MRS Proceedings Spring Meeting: invited paper (2003)
  155. J.C. Claussen, J. Carstensen, M. Christophersen, S. Langa, and H. Föll, "Open-Loop-Control of pore formation in semiconductor etching", in Proceedings of Physics and Control, St. Petersburg, Russia, ed. A.L. Fradkov, 895 (2003)
  156. J.C. Claussen, J. Carstensen, M. Christophersen, S. Langa, and H. Föll, "Self-organized formation of fractal and regular pores in semiconductors", in Lecture notes in computational science and engineering, eds. H. Emmerich, B. Nestler, and M. Schreckenberg, 82, Springer, Berlin (2003)
  157. Photonic Crystals, eds. Kurt Busch, Stefan Lölkes, Ralf B. Wehrspohn, Helmut Föll, Wiley-VCH, Weinheim, Germany, 2004, (Table of Contents)
  158. R.B. Wehrspohn, J. Schilling, J. Choi, Y. Luo, S. Matthias, S.L. Schweizer, F. Müller, U. Gösele, S. Lölkes, S. Langa, J. Carstensen, and H. Föll, Electrochemically-prepared 2D and 3D photonic crystals in: K. Busch, S. Lölkes, R. B. Wehrspohn, and H. Föll (eds.), Photonic Crystals - Advances in Design, Fabrication, and Characterization, Wiley-VCH, Weinheim (2004), 63
  159. I. M. Tiginyanu, S. Langa, L. Sirbu , E. Monaico, M. A. Stevens-Kalceff, and H. Föll, Cathodoluminescence microanalysis of porous GaP and InP structures, Eur. Phys. J. Appl. Phys. 27, (2004) 81
  160. V. Kochergin, M. Christophersen, and H. Föll, Effective medium approach for calculations of optical anisotropy in porous materials, App. Phy. B 79 (6), (2004) 731
  161. V. V. Sergentu, E. Foca, S. Langa, J. Carstensen, H. Föll, and I. M. Tiginyanu, Focusing effect of photonic crystal concave lenses made from porous dielectrics, phys. stat. sol. (a), 201 (5), (2004) R31
  162. CELLO: Ein Instrument zur Solarzellendiagnostik, Photon-DAS SOLARSTROM-MAGAZIN, 10/2004, 52
  163. CELLO: An instrument for solar cell diagnostics, PHOTON-International, 10/2004, 44
  164. S. Langa, S. Frey, J. Carstensen, H. Föll, I.M. Tiginyanu, M. Hermann, and G. Böttger, Waveguide Structures Based on Porous Indium Phosphide, Electrochemical and Solid-State Letters, 8 (2), (2005), C30
  165. H.-S. Kitzerow, G. Mertens, H. Matthias, H. Marsmann, R.B. Wehrspohn, S. Matthias, U. Gösele, S. Frey, and H. Föll, "Director fields of nematic liquid crystals in tunable photonic crystals", Proc. SPIE Int. Soc. Opt. Eng. 5926, 592605 (2005).
  166. E. Foca, H. Föll, F. Daschner, V. V. Sergentu, J. Carstensen, S. Frey, R. Knöchel, and I. M. Tiginyanu, Efficient focusing with a concave lens based on a photonic crystal with an unusual effective index of refraction, phys. stat. sol. (a), 202 (4), (2005) R35
  167. S. Langa, L. Sirbu, E. Monaico, J. Carstensen, H. Föll, and I.M. Tiginyanu, "Morphology and chemical composition microanalysis of 2D and 3D ordered structures on porous InP", phys. stat. sol. (a) 202 (8), 1411 (2005).
  168. H. Elhouichet, M. Oueslati, N. Lorrain, S. Langa, I.M. Tiginyanu, and H. Föll, "Photoluminiscence mechanisms of Tb3+ - doped porous GaP", phys. stat. sol. (a) 202 (8), 1513 (2005).
  169. E. Foca, J. Carstensen, and H. Föll, "Monte Carlo simulation of electrochemical oscillations in the electropolishing regime", Phys. Stat. Sol. (a) 202 (8), 1524 (2005).
  170. S. Frey, M. Kemell, J. Carstensen, S. Langa, and H. Föll, "Fast pore etching", phys. stat. sol. (a) 202 (8), 1369 (2005).
  171. V. Kochergin, M. Christophersen, and H. Föll, Adjustable optical anisotropy in porous GaAs, Applied Phys. Lett. 86 (1), (2005) 042108.
  172. V. Kochergin, M. Christophersen, and H. Föll, Surface plasmon enhancement of an optical anisotropy in porous silicon/metal composite, App. Phy. B 80 (1)(2005) 81.
  173. S. Langa, J. Carstensen, I.M. Tiginyanu, M. Christophersen, H. Föll, Selfordering in porous III-V compounds, in "Ordered Porous Nanostructures and Applications", Ed. R.B. Wehrspohn, Springer-Verlag, (2005) 57.
  174. S. Langa, J. Carstensen, M. Christophersen, K. Steen, S. Frey, I. M. Tiginyanu, and H. Föll, Uniform and Nonuniform Nucleation of Pores during the Anodization of Si, Ge, and III-V Semiconductors, J. Electrochem. Soc., 152 (8), (2005) C525.
  175. S. Frey, B. Grésillon, F. Ozanam, J.-N. Chazalviel, J. Carstensen, H. Föll, and R. B. Wehrspohn, Self-Organized Macrostructures in Anodically Formed Mesoporous Silica, Electrochem. Sol. State Lett., 8 (9), (2005) B25.
  176. E. Foca, H. Föll, F. Daschner, V. V. Sergentu, J. Carstensen, R. Knöchel, and I. M. Tiginyanu, Efficient Focusing With an Ultra-Low Effective-Index Lens Based on Photonic Crystals, in "Materials, Integration and Technology for Monolithic Instruments", edited by Jeremy A.Theil, Markus Böhm, Donald S. Gardner, and Travis Blalock (Mater. Res. Soc. Symp. Proc. 869, Warrendale, PA , 2005), D4.4.
  177. J. Carstensen, S. Mathijssen, G. Popkirov, and H. Föll, SOLAR CELL EFFICIENCY ANALYSIS AND DEFECT IDENTIFICATION USING THE CELLO - TECHNIQUE, in Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona 2005, (2005) 1AV.2.40.
  178. S. Mathijssen, J. Carstensen, and H. Föll, ANALYSIS OF SERIAL RESISTANCE LOSSES ON SOLAR CELLS USING THE CELLO - TECHNIQUE, in Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona 2005, (2005) 1AV.2.41.
  179. E. Spiecker, M. Rudel, W. Jäger, M. Leisner, and H. Föll, Morphology, interface polarity and branching of electrochemically etched pores in InP, phys. stat. sol. (a), 202(15), 1 (2005).
  180. O. Breitenstein, J.P. Rakotoniaina, A.S.H. van der Heide, and J. Carstensen, Series Resistance Imaging in Solar Cells by Lock-in Thermography Research, Prog. Photovolt: Res. Appl., 13, (2005) 645.
  181. C. Fang, S. Langa, L. Jiang, J. Carstensen, E. Foca, and H. Föll, "Electrochemical pore etching in Germanium", in Mat. Res. Soc. Symp. Spring meeting 2005 - Abstracts, 3.8 (2005).
  182. S. Mathijssen, J. Carstensen, H. Föll, G. Voorwinden, and H. Stiebig, "CELLO measurements of CIGS and µcSi solar cells", in Mater.Res.Soc.Symp.Proc. 865, F5.30.1, San Francisco (2005).
  183. H. Föll, J. Carstensen, and S. Frey, "Porous and Nanoporous Semiconductors and Emerging Applications", in Sensor, and Gas Separation Applications, eds. S.W. Lu, H. Hahn, J. Weissmuller, and J.L. Gole, R12.1, Mater. Res. Soc. Symp. Proc. 876E, Warrendale, PA (2005).
  184. I. Tighineanu, S. Langa, H. Föll, and V. Ursachi, Porous III-V Semiconductors, Stiinta, Chisinau (2005).
  185. V. Kochergin and H. Föll, "Effective medium approach for calculation of linear and nonlinear properties of porous semiconductor composites", Mater.Res.Soc.Symp.Proc. 881E, CC3.1.1 (2005).
  186. E. Spiecker, M. Rudel, W. Jäger, M. Leisner, and H. Föll, "Interface polarity and shapes of electrochemically etched pores in InP", in Proceedings Microscopy Conference 2005, 6. Dreiländertagung 2005, Davos, Switzerland, 28. August - 2. September 2005, PSI Proceedings, 232, Paul Scherrer Institut (2005).
  187. J. Carstensen, M. Christophersen, S. Lölkes, E. Ossei-Wusu, J. Bahr, S. Langa, G. Popkirov, and H. Föll, "Large area etching of porous semiconductors", Phys. Stat. Sol. (c) 2(9), 3339 (2005).
  188. S. Langa, J. Carstensen, I.M. Tiginyann, and H. Föll, "Nucleation and growth of macro pores on (100) n-type Ge", Phys. stat. sol.(c) 2(9), 3237 (2005).
  189. S. Langa, S. Lölkes, J. Carstensen, M. Hermann, G. Böttger, I.M. Tiginyanu, and H. Föll, "Engineering the morphology of porous InP for waveguide applications", Phys. stat. sol.(c) 2(9), 3253 (2005).
  190. H. Elhouichet, S. Daboussi, H. Ajlani, A. Najar, A. Moadhen, M. Oueslati I.M. Tiginyanu, S. Langa, and H. Föll, "Strong visible emission from porous GaP doped with Eu and Tb ions", J. Luminescence 113, 329 (2005)
  191. C. Fang, H. Föll, and J. Carstensen, "Electrochemical pore etching in Germanium", J. Electroanal. Chem. 589, 259 (2006)
  192. C. Fang, H. Föll, and J. Carstensen, "Long Germanium nanowires prepared by electrochemical etching", Nano Lett. 6(7), 1578 (2006)
  193. H. Föll, J. Carstensen, and E. Foca, "Self-induced oscillations in Si and other semiconductors", Int. J. Mat. Res. 2006(7) (2006)
  194. S. Keipert, S. Frey, J. Carstensen, H. Föll, and J.-N. Chazalviel, "SEM investigation, in-situ FFT impedance analysis and modeling of the formation of nanoporous silica with self-organized macrostructures", E-MRS Nizza , to be published (2006).
  195. F. Cheng, J. Carstensen, and H. Föll, "Electrochemical pore etching in Ge", Materials science in semiconductor processing , 9(4-5), 694 (2006).
  196. J. Carstensen, A. Schütt, G. Popkirov, and H. Föll, "Fast CELLO measurements for defect identification and loss quantification of solar cells", in Proceedings of the 21th European Photovoltaic Solar Energy Conference, 2AO.3.4, Dresden (2006).
  197. A. Schütt, J. Carstensen and H. Föll, "Quantitative analysis of local serial resistance and diode losses using the CELLO technique", in Proceedings of the 21th European Photovoltaic So-lar Energy Conference, 1BV.2.36, Dresden (2006)
  198. H. Föll, J. Carstensen, and Stefan Frey, "Porous and Nanoporous Semiconductors and Emerging Applications," Journal of Nanomaterials: Nanoporous and Nanostructured Materials for Catalysis, Sensor, and Gas Separation Applications, 2006, Article ID 91635 (2006).
  199. F. Daschner, R. Knöchel, E. Foca, J.Carstensen, V.V. Sergentu, H. Föll, and I.M. Tiginyanu}, "Photonic crystals as host material for a new generation of microwave components", Adv. Radio Sci, 4, 17, (2006)
  200. H. Jacobsen, H.-J. Quenzer, B. Wagner, K. Ortner, and Th. Jung, "High-rate sputtering of thick PZT layers for MEMS actuators", Proc. MEMS 2006, Istanbul, 214 (2006)
  201. K. Ortner, H. Jacobsen, D. Koeßler, Th. Jung, H.-J. Quenzer, R. Bandorf, and H. Lüthje, "Novel method for high rate deposition of Lead Zirconate Titanate piezoelectric films", Proc. 10th International Conference on Plasma Surface Engineering (2006)
  202. K. Ortner, D. Koeßler, Th. Jung H. Jacobsen, and H.-J. Quenzer, "Novel method for high rate deposition of Lead Zirconate Zitanate piezoelectric films", Proc. Plasma Processes and Polymers (2006)
  203. V. Kochergin and H. Föll, "Novel optical elements made from porous Si", Mater. Sci. Eng. R 52(4-6), 93 (2006) (review)
  204. V.V. Sergentu, V.V. Ursaki, I.M. Tiginyanu, E. Foca, H. Föll, and R.W. Boyd, "Focusing slabs made of negative index materials based on inhomogeneous dielectric rods", Phys. Stat. Sol. (a) 203(6), R48-R50 (2006)
  205. H. Jacobsen, Th. Jung, K. Ortner, K.I. Schiffmann, H.-J. Quenzer, and B. Wagner, "Development of a piezoelectric Lead Titanate thin film process on Silicon substrates by high rate gas flow sputtering", Sensors and Actuators A, Sensors and Actuators A 133, 250 (2007).
  206. H. Jacobsen, H.-J. Quenzer, B. Wagner, K. Ortner, and Th. Jung, "Thick PZT layers deposited by gas flow sputtering", Sensors and Actuators A, Sensors and Actuators A 135, 23 (2007).
  207. C. Fang, J. Carstensen, and H. Föll, "Electrochemical pore etching in n- and p-type Ge", Solid State Phenomena, 121-123, 37, (2007)
  208. J. Carstensen, H. Föll, E. Foca, and C. Fang, , "A stochastic model for current and voltage oscillation of the Si electrode", Solid State Phenomena, 121-123, 1115 (2007)
  209. V. Kochergin, V. Zaporojtchenko, H. Takele, F. Faupel, and H. Föll, "Improved effective medium approach: Application to metal nanocomposites", J. Appl. Phys., 101(2), 024302 (2007)
  210. M. Kemell, M. Ritala, M. Leskelä, E. Ossei-Wusu, J. Carstensen, and H. Föll, " Si/Al2O3/ZnO:Al capacitor arrays formed in electrochemically etched porous Si by atomic layer deposition", Microelectronic Engineering 84, 313 (2007).
  211. C. Fang, E. Foca, L. Sirbu, J. Carstensen, I.M. Tiginyanu, and H. Föll, "Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III-V semiconductors", Phys. Stat. Sol. (a) 204(5), 1388 (2007)
  212. E. Foca, J. Carstensen, G. Popkirov, and H. Föll, "Pores growth control by in-Situ FFT impedance spectroscopy", Phys. Stat. Sol. (a) 204(5), 1378 (2007)
  213. E. Foca, J. Carstensen, and H. Föll, "Quantitative modelling of voltage oscillations and other oscillatory phenomena with the Current Burst Model", Phys. Stat. Sol. (a) 204(5), 1883 (2007)
  214. S. Frey, S. Keipert, J.-N. Chazalviel, F. Ozanam, J. Carstensen, and H. Föll, "Electrochemical formation of porous silica: Toward an understanding of the mechanisms", Phys. Stat. Sol. (a) 204(5), 1250 (2007)
  215. V. Kochergin and H. Föll, "Commercial applications of porous Si: Optical filters and components", Phys. Stat. Sol. (c) 4(6), 1933 (2007)
  216. C. Fang, H. Föll, J. Carstensen, and S. Langa, "Electrochemical pore etching in Ge - An overview", Phys. stat. sol. (a) 204(5), 1292 (2007)
  217. E. Foca, J. Carstensen, and H. Föll, "Modelling electrochemical current and potential oscillations at the Si electrode", J. Electroanal. Chem. 603, 175 (2007) (review)
  218. E. Foca, J. Carstensen, M. Leisner, E. Ossei-Wussu, O. Riemenschneider, and H. Föll, "Smoothening the Pores Walls in Macroporous n-Si", ECS Transactions, 211th Meeting of The Electrochemical Society, Chicago 2007 6(2), 367 (2007)
  219. E. Foca, J. Carstensen, G. Popkirov, and H. Föll, "Controlling Macropores Etching in n-Si by Means of FFT in-situ Voltage- and Photoimpedance Spectroscopy", ECS Transactions, 211th Meeting of The Electrochemical Society, Chicago 2007 6(2), 345 (2007)
  220. E. Foca, J. Carstensen, and H. Föll, "Describing the Si-HF contact with the Current Burst Model: from oscillatory behavior to pore formation", ECS Transactions, 211th Meeting of The Electrochemical Society, Chicago 2007, in press (2007)
  221. E. Foca, O. Riemenschneider, E. Lage, M. Leisner, J. Carstensen, and H. Föll, "Impact of the Alcohol-Containing Electrolytes on the Macropores Etching in n-Si", ECS Transactions, 211th Meeting of The Electrochemical Society, Chicago 2007 6(2), 395 (2007)
  222. H. Föll, J. Carstensen, E. Foca, and M. Leisner, "Understanding and controlling Pore Etching in Semiconductors", ECS Transactions, 211th Meeting of The Electrochemical Society, Chicago 2007 6(2), 309 (2007) (invited paper)
  223. S. Keipert, J. Carstensen, and H. Föll, "FFT photoimpedance measurements of semiconductors for solar application", ECS Transactions, 211th Meeting of The Electrochemical Society, Chicago 2007 6(2), 387 (2007)
  224. M. Leisner, J. Carstensen, and H. Föll, "FFT Impedance Spectroscopy Analysis of the Growth of Anodic Oxides on Si with Various Electrolytes", ECS Transactions, 211th Meeting of The Electrochemical Society, Chicago 2007 6(2), 599 (2007)
  225. V.V. Sergentu, V.V. Ursaki, I.M. Tiginyanu, E. Foca, H. Föll, and R.W. Boyd, "Design of negative-refractive-index on the basis of rods with a gradient of the dielectric constant", Appl. Phys. Lett. 91, 081103 (2007)
  226. I.M. Tiginyanu, V.V. Ursaki, E. Monaico, E. Foca, and H. Föll, "Pore etching in III-V and II-VI semiconductor compounds in neutral electrolyte", Electrochem. and Sol.-State Lett. 10(11), in press (2007
  227. J. Carstensen, A. Schütt, and H. Föll, "CELLO local solar cell resistance maps: Modeling of data and correlation to solar cell efficiency", in Proceedings of the 22nd European Photovoltaic Solar Energy Conference, 1CV.1.34, Milan (2007)
  228. A. Schütt, S. Keipert, J. Carstensen, and H. Föll, "Modeling of the frequency dependence of the CELLO photo current for increasing measurement speed and identification of defect types", in Proceedings of the 22th European Photovoltaic Solar Energy Conference, 1CV.1.35, Milan (2007)
  229. J.C. Claussen and J. Carstensen, "Underetching from simple stochastic etching kinetics", in Extended Abstracts - The 3rd international IEEE scientific Conference on Physics and Control (PhysCon2007), 184 (2007).
  230. H. Föll, J. Carstensen, and E. Foca, "Electrochemical pore formation in semiconductors: Oscillations, structure formation and control", in Extended Abstracts - The 3rd international IEEE scientific Conference on Physics and Control (PhysCon2007), 185 (2007)
  231. A. Cojocaru, E. Foca, J. Carstensen, M. Leisner, I.M. Tiginyanu, and H. Föll, "Impedance spectroscopy as a powerful tool for better understanding and controlling the pore growth mechanism in semiconductors", in Proceedings of the 5th international conference on "Microelectronics and computer science" (Volume 1), 133, Technical University of Moldova, Chisinau (2007).
  232. C. Fang, E. Foca, S. Xu, J. Carstensen, and H. Föll, "Deep silicon macropores filled with copper by electrodeposition", J. Electrochem. Soc. 154(1), D45-D49 (2007).
  233. M. Kasemann, M.C. Schubert, S. Kontermann, W. Kwapil, S. Rein, W. Warta, S. Glunz, T. Trupke, Y. Augarten, E. Pink, O. Breitenstein, A. Schütt, J. Carstensen, and H. Föll, "Spatially Resolved Silicon Solar Cell Characterization using Infrared Imaging Methods", Crystalline Silicon Solar Cells and Technologies , (2008).
  234. A. Cojocaru, J. Carstensen, M. Leisner, H. Föll, and I.M. Tiginyanu, "Self-induced oscillation of the macropore diameter in n-type silicon", PSST 2008 , submitted (2008).
  235. A. Cojocaru, J. Carstensen, E.K. Ossei-Wusu, M. Leisner, O. Riemenschneider, and H. Föll, "Fast macropore growth in n-type silicon", PSST 2008 , submitted (2008).
  236. M. Leisner, J. Carstensen, A. Cojocaru, and H. Föll, "Pore growth on n-InP investigated by in situ FFT impedance spectroscopy", PSST 2008 , submitted (2008).
  237. J. Carstensen, H. Föll, A. Cojocaru, and M. Leisner, "In-situ FFT impedance spectroscopy in new modes applied to pore growth in semiconductors", PSST 2008 , submitted (2008).
  238. M.A. Amin, S. Frey, F. Ozanam, and J.-N. Chazalviel, "Macromorphologies in electrochemically formed porous silica", Electrochim. Acta 53(13), 4485 (2008).
  239. H.-J. Quenzer, H. Jacobsen, K. Prume, B. Wagner, K. Ortner, and Th. Jung, "High-rate sputtering of thick PZT-layers for MEMS", Journal of Electroceramics, to be published (2008).
  240. M. Leisner, J. Carstensen, and H. Föll, "FFT impedance spectroscopy analysis of the growth of anodic oxides on (100) p-Si for various solvents", J. Electroanal. Chem. 615(2), 124 (2008).
  241. J. Carstensen, E. Foca, S. Keipert, H. Föll, M. Leisner, and A. Cojocaru, "New modes of FFT impedance spectroscopy applied to semiconductor pore etching and materials characterization", Phys. Stat. Sol. (a) 205(11), 2485 (2008).
  242. U. Hofmann, M. Oldsen amd H.-J. Quenzer, and B. Wagner, "Wafer-level vacuum packaged resonant micro-scanning mirrors for compact laser projection displays", in SPIE Conference Vol. 6887, MOEMS and Miniaturized Systems, to be published (2008).
  243. D. Kieven, T. Dittrich, A. Belaidi, J. Tornow, K. Schwarzburg, N. Allsop, and M. Lux-Steiner, "Effect of internal surface area on the performance of ZnO/ In2S3 /CuSCN solar cells with extremely thin absorber", Appl. Phys. Lett. 92, 153107 (2008).
  244. J. Tornow, K. Ellmer, J. Szarko, and K. Schwarzburg, "Voltage bias dependency of the space charge capacitance of wet chemically grown ZnO nanorods employed in a dye sensitized photovoltaic cell", Thin Solid Films, in press (2008).
  245. A. Belaidi, T. Dittrich, D. Kieven, J. Tornow, K. Schwarzburg, M. Kunst, N. Allsop, M. Lux-Steiner, and S. Gavrilov, "ZnO nanorod arrays for solar cells with extremely thin sulfuric absorber", Sol. Ener. Mater. Sol. Cells, submitted (2008).
  246. M. Kasemann, W. Kwapil, M.C. Schubert, H. Habenicht, B. Walter, M. The, S. Kontermann, S. Rein, O. Breitenstein, J. Bauer, A. Lotnyk, B. Michl, H. Nagel, A. Schütt, J. Carstensen, H. Föll, T. Trupke, Y. Augarten, H. Kampwerth, R.A. Bardos, S. Pingel, J. B"Spatially Resolved Silicon Solar Cell Characterization using Infrared Imaging Methods", in Proceedings of the 31st IEEE Photovoltaic Specialists Conference, , San Diego, CA, USA (2008).
  247. U. Gösele and H. Föll, "Volker Lehmann: An unconventional scientist", ECS Trans., submitted (2008).
  248. M. Leisner, J. Carstensen, A. Cojocaru, and H. Föll, "In-situ FFT impedance spectroscopy during the growth of crystallographically oriented pores in InP", ECS Trans., submitted (2008).
  249. A. Cojocaru, J. Carstensen, and H. Föll, "Growth modes of macropores in n-type silicon", ECS Trans., submitted (2008).
  250. E.K. Ossei-Wusu, A. Cojocaru, J. Carstensen, M. Leisner, and H. Föll, "Etching deep macropores in n-type silicon in short times", ECS Trans., submitted (2008).
  251. J. Carstensen, A. Cojocaru, M. Leisner, and H. Föll, "In-situ assessment of macropore growth in low-doped n-type silicon", ECS Trans., submitted (2008).
  252. J. Carstensen, A. Schütt, and H. Föll, "Modelling of the distributed serial grid resistance: verification by CELLO measurements and generalization to other resistance mapping tools", in Proceedings of the 23nd European Photovoltaic Solar Energy Conference, 1CV.1.38, Valencia (2008)
  253. J. Carstensen, A. Schütt, and H. Föll, "CELLO measurements with FFT impedance analysis: Drastic increase of measurement speed for analysis of local solar cell defects", in Proceedings of the 23nd European Photovoltaic Solar Energy Conference, 1AO.6.1, Valencia (2008)
  254. M. Kasemann, W. Kwapil, B. Walter, J. Giesecke, B. Michl, M. The, J.-M. Wagner, J. Bauer, A. Schütt, J. Carstensen, S. Kluska, F. Granek, H. Kampwerth, P. Gundel, M.C. Schubert, R.A. Bardos, H. Föll, H. Nagel, P. Würfel, T. Trupke, O. Breitenstein, M. Herle, W. Warta, and S.W. Glunz, "Progress in silicon solar cell characterization with infrared imaging methods", in Proceedings of the 23th European Photovoltaic Solar Energy Conference, 2DP.2.3, Valencia (2008).
  255. B. Michl, M. Kasemann, J. Giesecke, M. Glatthaar, A. Schütt, J. Carstensen, H. Föll, S. Rein, W. Warta, and H. Nagel, "Application of luminescence imaging based series resistance measurement methodes in an industrial environment", in Proceedings of the 23th European Photovoltaic Solar Energy Conference, 2DO.2.51, Valencia (2008).
  256. U. Gösele and H. Föll, "Volker Lehmann: An unconventional scientist", ECS Trans. 16(3), 7 (2008).
  257. M. Leisner, J. Carstensen, A. Cojocaru, and H. Föll, "In-situ FFT impedance spectroscopy during the growth of crystallographically oriented pores in InP", ECS Trans. 16(3), 133 (2008).
  258. A. Cojocaru, J. Carstensen, and H. Föll, "Growth modes of macropores in n-type silicon", ECS Trans. 16(3), 157 (2008).
  259. E.K. Ossei-Wusu, A. Cojocaru, J. Carstensen, M. Leisner, and H. Föll, "Etching deep macropores in n-type silicon in short times", ECS Trans. 16(3), 109 (2008).
  260. J. Carstensen, A. Cojocaru, M. Leisner, and H. Föll, "In-situ assessment of macropore growth in low-doped n-type silicon", ECS Trans. 16(3), 21 (2008).
  261. P. Schmuki, H. Föll, U. Gösele, J.J. Kelly, D.J. Lockwood, and Y.H. Ogata (Eds.), "Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann", ECS Trans. 16(3) (2008).
  262. E. Foca, V.V. Sergentu, F. Daschner, I.M. Tiginyanu, R. Knöchel, and H. Föll, "Superlensing with plane plates consisting of dielectric cylinders in glass envelopes", phys. stat. sol. (a) 206(1), 140 (2009).
  263. H. Föll, M.-D. Gerngross, A. Cojocaru, M. Leisner, J. Bahr, and J. Carstensen, "How to make single small holes with large aspect ratios", Phys. Stat. Sol. (RRL) 3(2), 55 (2009).
  264. H. Föll, M. Leisner, A. Cojocaru, and J. Carstensen, "Self-organization phenomena at semiconductor electrodes", Electrochim. Acta 55(2), 327 (2009).
  265. H. Föll, M. Leisner, J. Carstensen, and P. Schauer, "Growth mode transition of crysto and curro pores in III-V semiconductors", ECS Trans. 19(3), 329 (2009).
  266. M.-D. Gerngross, H. Föll, A. Cojocaru, and J. Carstensen, "Production of high aspect ratio single holes in semiconductors", ECS Trans. 19(3), 347 (2009).
  267. J. Carstensen, A. Cojocaru, M. Leisner, and H. Föll, "Dynamics of macropore growth in n-type silicon investigated by FFT in-situ impedance analysis", ECS Trans. 19(3), 355 (2009).
  268. M. Leisner, J. Carstensen, and H. Föll, "Simulating crystallographic pore growth on III-V semiconductors", ECS Trans. 19(3), 321 (2009).
  269. J. Carstensen, H. Föll, A. Cojocaru, and M. Leisner, "In-situ FFT impedance spectroscopy in new modes applied to pore growth in semiconductors", Phys. Stat. Sol. (c) 6(7), 1629 (2009).
  270. A. Cojocaru, J. Carstensen, M. Leisner, H. Föll, and I.M. Tiginyanu, "Self-induced oscillation of the macropore diameter in n-type silicon", Phys. Stat. Sol. (c) 206(7), 1533 (2009).
  271. A. Cojocaru, J. Carstensen, E.K. Ossei-Wusu, M. Leisner, O. Riemenschneider, and H. Föll, "Fast macropore growth in n-type silicon", Phys. Stat. Sol. (c) 206(7), 1571 (2009).
  272. M. Leisner, J. Carstensen, A. Cojocaru, and H. Föll, "Pore growth on n-InP investigated by in situ FFT impedance spectroscopy", Phys. Stat. Sol. (c) 206(7), 1566 (2009).
  273. J. Carstensen and H. Föll, "New Modes of Fast Fourier Impedance Spectroscopy Applied to Solar Materials Characterization and Semiconductor Pore Etching", ECS Trans. 25(3), 11 (2009).
  274. J. Carstensen, A. Abdollahinia, A. Schütt, and H. Föll, "Characterization of the grid design by fitting of the distributed serial grid resistance to CELLO resistance maps and global IV curves", in Proc. 24th European Photovoltaic Solar Energy Conference, 1CV.4.33, Hamburg (2009).
  275. J. Carstensen, A. Schütt, and H. Föll, "CELLO FFT impedance analysis as a routine tool for identifying various defect types on crystalline silicon solar cells", in Proc. 24th European Photovoltaic Solar Energy Conference, 1AO.4.5, Hamburg (2009).
  276. I.M. Tiginyanu, E. Foca, V.V. Sergentu, V.V. Ursaki, F. Daschner, R. Knöchel, and H. Föll, "Design and characterization of novel focusing elements based on photonic metamaterials", J. of Nanoelectronics and Optoelectronics 4, 1 (2009).
  277. A. Cojocaru, E. Foca, J. Carstensen, M. Leisner, I.M. Tiginyanu, and H. Föll, "Impedance spectroscopy as a powerful tool for better understanding and controlling the pore growth mechanism in semiconductors", in Nanoscale phenomena, eds. H. Hahn, A. Sidorenko, and I. Tiginyanu, Springer, Berlin (2009).
  278. V. Kochergin and H. Föll, Porous semiconductors: Optical properties and applications, Springer, London (2009).

recent publication

Dissertations

  1. LIPPIK, W., Dissertation, Weiterentwicklung der ELYMAT-Technik. (1996).
  2. OTTOW, S., Dissertation, Elektrochemische Untersuchungen am Silizium/Flußsäure-Elektrolytkontakt und Anwendungen von nano- und makroporösen Siliziumschichten. (1996). Prize of the CAU for outstanding dissertations.
  3. PRANGE, R., Dissertation, Elektrochemische Charakterisierung und Modellierung langsamer Strom- und Spannungsoszillationen am Silizium-Siliziumoxid-Flußsäure-System. (1998).
  4. ROENNEBECK, S., (2002), Untersuchungen zur Anwendung makroporösen Siliziums in der Röntgentechnik (2001). Prize of the CAU for outstanding dissertations
  5. KORALLUS, J., Dissertation, OrtsaufgelösteLeckstrom-Messungen an der Silizium-Elektrolyt-Grenzfläche (2001)
  6. CHRISTOPHERSEN, M., Dissertation, Untersuchungen zur Makroporenbildung in Silizium und deren technologischen Nutzung (2002)
  7. HEJJO AL RIFAI, M., Dissertation, Passivierung und Charakterisierung von Defekten in Siliziumsolarzellen (2003).
  8. LANGA, S., Dissertation, Electrochemical pore etching in III-V compounds (2004).
  9. FREY, S., Dissertation, Novel formation regimes and mechanisms for macropores and porous anodic oxides in silicon (2005).
  10. HASSE, G., Dissertation, Untersuchungen der kinetischen Prozesse an Silizium-Elektroden mit Stromtransienten- und Impedanzmessungen (2005).
  11. KOCHERGIN, V.Y., Optical Properties of Metamaterials Based on Porous Semiconductors and Nanocomposites – Theoretical Considerations and Experiments (2006).
  12. FOCA, E., Macropores in Si: fundamental study and prospective applications (2007).
  13. GARRALAGA ROJAS, E.J., Mesoporous Germanium Layer Formation by Electrochemical Etching. (2010)
  14. KEIPERT-COLBERG, S., Multikristalline Siliziumsolarzellen mit Siliziumoxid-Siliziumnitrid-Rückseitenpassivierung (2010)
  15. LEISNER, M., Untersuchung und Modellierung des elektrochemischen Porenwachstums in InP mit In-situ-FFT-Impedanzspektroskopie und Monte-Carlo-Simulation (2011).

Hyper Scripts

  1. FÖLL, H., AMAT hyperscripts
  2. FÖLL, H., Materials science for the ?
  3. FÖLL, H., Multimedia in teaching: Hyper script in practice
  4. FÖLL, H., More publications and speechs about a general subject: Engineer, Econimics and Society, University management.

Posters

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