A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
A, | |
a i | Activity |
B, | |
bcc | Body centered cubic |
kB | Boltzmanns constant |
BMD | Bulk micro defect |
K | Bulk modulus |
b | Burgers vector |
C, | |
µ | Chemcal potential |
µ | Chemical potential |
m | Chemical potential |
CSL | Coincidence site lattice |
tcrit | Critical shear stress |
COP | Crystal originated particles or pits |
D, | |
DLTS | Deep level transisnt spectroscopy |
D | Diffusion coefficient |
L | Diffusion length |
DSC | Displacement shift complete |
DRAM | Dynamic random access memory |
E, | |
EBIC | Electron beam induced current |
EBIC | Electron beam induced current |
ESR | Electron spin resonance |
EF | Energy of formation |
H | Enthalpy |
HF | Enthalpy of Formation |
S | Entropy |
SF | Entropy of formation |
x | Extinction length |
F, | |
(fcc) | Face centered cubic |
fcc | Face centered cubic |
j | Flux of particles |
F | Force on a dislocation |
F | Free energy |
G(p, T, N) | Free enthalpy |
G | Free enthalpy (= Gibbs energy) |
GF | Free enthalpy of formation |
f | Fugacity |
G, | |
R | Gas constant |
g | Geometry factor |
g | Geometry factor of the lattice for diffusion |
GF | Gibbs energy or free enthalpy |
H, | |
hcp | hexagonal close packed |
HRTEM | High resolution TEM |
HRTEM | High-resolution TEM |
HTML | Hypertext mark up language |
I, | |
i.e. | id est (that means) |
IR | Infra red |
IC | Integrated circuit |
IC | Intergrated circuits |
i | Interstitial |
J, | |
n | Jump frequency |
K,L, | |
LBIC | Light beam induced current |
LPD | Light point defects |
t(x,y,z) | Line vector |
M, | |
MOS | Metal-oxide-semiconductor |
MBE | Molecular beam epitaxy |
N, | |
NMR | Nuclear magnetic resonance |
O, | |
OSF | Oxidation induced stacking faults |
OSF | Oxidation induced stacking fault |
P, | |
pi | Partial pressure of component i |
ppb | Parts per billion |
PD | Point defect |
n | Poisson´s ratio |
Q, | |
q.e.d | Quod era demonstrantum (what was to be proven) |
R, | |
K | Reaction constant |
RBS | Rutherford backscattering |
S, | |
SEM | Scanning electron microscope |
STM | Scanning tunneling microscope |
SIMS | Secondary mass spectroccopy |
G | Shear modulus |
t | Shear stress in a glide plane |
F | Short for formation |
SAGB | Small-angle grain boundary |
SF | Stacking Fault |
e | Strain |
T, | |
TEM | Transmission electron microscope |
TEM | Transmission electron microscopy |
TEM | Transmission electron microscope |
U, | |
UHV | Ultra high vacuum |
S | Unit cell volume of CSL |
V, | |
V | Vacancy |
© H. Föll (Defects - Script)