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Hyperscript"Semiconductors"© H. Föll Table of Contents |
Hyperscripts of AMAT: General Information |
| 1.1 Scope of the Course | ||
| Goals and Contents | ||
| Relation to Other Courses | ||
| Required Background Knowledge | ||
| Organisation | ||
| 2.1 Basic Band Theory | ||||
| Free electron gas - Recapitulation | ||||
| Diffraction of Electron Waves - Recapitulation | ||||
| Energy Gaps and General Bandstrucure | ||||
| Periodic Potentials and Blochs Theorem | ||||
| Band Structures and Standard Representations | ||||
| 2.2 Basic Semiconductor Physics | ||||
| Intrinsic Properties | ||||
| Doping and Carrier Concentration | ||||
| Lifetime and Diffusion Length | ||||
| Simple Junctions and Devices | ||||
| 2.3 Elements of Advanced Theory | ||||
| Effective Masses | ||||
| Quasi Fermi Energies | ||||
| Shockley-Read-Hall Recombination | ||||
| Useful Relations | ||||
| Junctions Reconsidered | ||||
3. Silicon: General Properties and Technologies
| 3.1 General Properties | ||||
| Conductivity, lifetime and lattice defects | ||||
| Diffusion | ||||
| Mechanical, thermal and other properties | ||||
| 3.2 Silicon Production | ||||
| Single crystals and wafers | ||||
| Polycrystalline silicon for solar Cells | ||||
| Crystal lattice defects in Si | ||||
| 3.3 General Device and Product Consideration | ||||
| Interfaces and contacts | ||||
| Scaling laws | ||||
| 3.4 Basic Si Devices | ||||
| Diodes, bipolar transistor | ||||
| MOS transistors | ||||
| Miscellaneous | ||||
4. Silicon: Special Properties and Emerging Technologies
| Mostly unfinished | ||||
| 4.1 Silicon on Insulator | ||||
| General remarks | ||||
| Modern developments | ||||
| Micromechanics and Microsystem Technology | ||||
| 4.2 Etching of Silicon | ||||
| General remarks | ||||
| Chemical etching of Silicon | ||||
5. Fundamentals of Optoelectronics
| 5.1 Materials and Radiant Recombination | ||||
| Basic Questions and Material Issues | ||||
| Recombination and Luminescence | ||||
| Doping of Compound Semiconductors | ||||
| Wavelength Engineering | ||||
| 5.2 Light and Semiconductors | ||||
| Total Efficiency of Light Generation | ||||
| Absorption and Emission of Light | ||||
| 5.3 Heterojunctions | ||||
| Ideal Heterojunctions | ||||
| Isotype Heterojunctions | ||||
| Real Heterojunctions | ||||
| 5.4 Quantum Devices | ||||
| Single and Multiple Quantum Wells | ||||
6. Principles of the Semiconductor LASER
| 6.1 LASER conditions | ||||
| Interaction of Light and Electrons and Inversion | ||||
| Light Amplification in Semiconductors | ||||
| From Amplification to Oscillation: Second Laser Condition | ||||
| 6.2 Specific Topics | ||||
| Turning on a Laser Diode | ||||
| Laser Modes | ||||
| 7.1 Basic Requirements and Design Principles | ||||
| Products, Market, Materials, and Technologies | ||||
| Some LED Concepts | ||||
| Optimizing Light Confinement and Gain in Laser Diodes | ||||
| Double Heterojunctions Specialities | ||||
| 7.2 Specialities | ||||
| 8.1 Some Basics to Device Speed | ||||
| General aspects, time consuming processes | ||||
| 8.2 Dynamic Behavior of p-n-Junctions | ||||
| General observations, small signal response | ||||
| Switching junction diodes and bipolar transistors | ||||
9. Compound Semiconductor Technology
| Mostly unfinished | ||||
| 9.1 General Remarks | ||||
| Major differences to Si technology | ||||
| 9.2 Bulk Crystals | ||||
| GaAs | ||||
| 9.3 Epitaxial Layers | ||||
| General Remarks | ||||
| Liquid Phase Epitaxy | ||||
| Molecular Beam Epitaxy | ||||
| 10.1 SiC and Diamond | ||||
| 10.2 II - VI Semiconductors | ||||
| 10.3 Semiconducting Polymers | ||||
| 10.4 Special Applications | ||||