Frame No Frame |
Hyperscript"Semiconductors"© H. Föll Table of Contents |
Hyperscripts of AMAT: General Information |
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1.1 Scope of the Course | |
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Goals and Contents | |
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Relation to Other Courses | |
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Required Background Knowledge | |
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Organisation |
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2.1 Basic Band Theory | |||
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Free electron gas - Recapitulation | |||
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Diffraction of Electron Waves - Recapitulation | |||
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Energy Gaps and General Bandstrucure | |||
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Periodic Potentials and Blochs Theorem | |||
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Band Structures and Standard Representations | |||
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2.2 Basic Semiconductor Physics | |||
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Intrinsic Properties | |||
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Doping and Carrier Concentration | |||
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Lifetime and Diffusion Length | |||
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Simple Junctions and Devices | |||
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2.3 Elements of Advanced Theory | |||
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Effective Masses | |||
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Quasi Fermi Energies | |||
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Shockley-Read-Hall Recombination | |||
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Useful Relations | |||
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Junctions Reconsidered |
3. Silicon: General Properties and Technologies
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3.1 General Properties | |||
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Conductivity, lifetime and lattice defects | |||
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Diffusion | |||
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Mechanical, thermal and other properties | |||
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3.2 Silicon Production | |||
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Single crystals and wafers | |||
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Polycrystalline silicon for solar Cells | |||
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Crystal lattice defects in Si | |||
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3.3 General Device and Product Consideration | |||
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Interfaces and contacts | |||
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Scaling laws | |||
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3.4 Basic Si Devices | |||
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Diodes, bipolar transistor | |||
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MOS transistors | |||
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Miscellaneous |
4. Silicon: Special Properties and Emerging Technologies
Mostly unfinished | ||||
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4.1 Silicon on Insulator | |||
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General remarks | |||
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Modern developments | |||
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Micromechanics and Microsystem Technology | |||
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4.2 Etching of Silicon | |||
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General remarks | |||
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Chemical etching of Silicon |
5. Fundamentals of Optoelectronics
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5.1 Materials and Radiant Recombination | |||
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Basic Questions and Material Issues | |||
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Recombination and Luminescence | |||
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Doping of Compound Semiconductors | |||
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Wavelength Engineering | |||
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5.2 Light and Semiconductors | |||
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Total Efficiency of Light Generation | |||
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Absorption and Emission of Light | |||
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5.3 Heterojunctions | |||
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Ideal Heterojunctions | |||
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Isotype Heterojunctions | |||
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Real Heterojunctions | |||
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5.4 Quantum Devices | |||
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Single and Multiple Quantum Wells | |||
6. Principles of the Semiconductor LASER
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6.1 LASER conditions | |||
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Interaction of Light and Electrons and Inversion | |||
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Light Amplification in Semiconductors | |||
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From Amplification to Oscillation: Second Laser Condition | |||
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6.2 Specific Topics | |||
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Turning on a Laser Diode | |||
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Laser Modes |
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7.1 Basic Requirements and Design Principles | |||
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Products, Market, Materials, and Technologies | |||
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Some LED Concepts | |||
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Optimizing Light Confinement and Gain in Laser Diodes | |||
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Double Heterojunctions Specialities | |||
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7.2 Specialities | |||
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8.1 Some Basics to Device Speed | |||
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General aspects, time consuming processes | |||
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8.2 Dynamic Behavior of p-n-Junctions | |||
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General observations, small signal response | |||
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Switching junction diodes and bipolar transistors | |||
9. Compound Semiconductor Technology
Mostly unfinished | ||||
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9.1 General Remarks | |||
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Major differences to Si technology | |||
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9.2 Bulk Crystals | |||
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GaAs | |||
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9.3 Epitaxial Layers | |||
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General Remarks | |||
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Liquid Phase Epitaxy | |||
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Molecular Beam Epitaxy | |||
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10.1 SiC and Diamond | |||
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10.2 II - VI Semiconductors | |||
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10.3 Semiconducting Polymers | |||
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10.4 Special Applications |