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Hyperscript"Semiconductors"© H. Föll Table of Contents |
Hyperscripts of AMAT: General Information |
1.1 Scope of the Course | ||
Goals and Contents | ||
Relation to Other Courses | ||
Required Background Knowledge | ||
Organisation |
2.1 Basic Band Theory | ||||
Free electron gas - Recapitulation | ||||
Diffraction of Electron Waves - Recapitulation | ||||
Energy Gaps and General Bandstrucure | ||||
Periodic Potentials and Blochs Theorem | ||||
Band Structures and Standard Representations | ||||
2.2 Basic Semiconductor Physics | ||||
Intrinsic Properties | ||||
Doping and Carrier Concentration | ||||
Lifetime and Diffusion Length | ||||
Simple Junctions and Devices | ||||
2.3 Elements of Advanced Theory | ||||
Effective Masses | ||||
Quasi Fermi Energies | ||||
Shockley-Read-Hall Recombination | ||||
Useful Relations | ||||
Junctions Reconsidered |
3. Silicon: General Properties and Technologies
3.1 General Properties | ||||
Conductivity, lifetime and lattice defects | ||||
Diffusion | ||||
Mechanical, thermal and other properties | ||||
3.2 Silicon Production | ||||
Single crystals and wafers | ||||
Polycrystalline silicon for solar Cells | ||||
Crystal lattice defects in Si | ||||
3.3 General Device and Product Consideration | ||||
Interfaces and contacts | ||||
Scaling laws | ||||
3.4 Basic Si Devices | ||||
Diodes, bipolar transistor | ||||
MOS transistors | ||||
Miscellaneous |
4. Silicon: Special Properties and Emerging Technologies
Mostly unfinished | ||||
4.1 Silicon on Insulator | ||||
General remarks | ||||
Modern developments | ||||
Micromechanics and Microsystem Technology | ||||
4.2 Etching of Silicon | ||||
General remarks | ||||
Chemical etching of Silicon |
5. Fundamentals of Optoelectronics
5.1 Materials and Radiant Recombination | ||||
Basic Questions and Material Issues | ||||
Recombination and Luminescence | ||||
Doping of Compound Semiconductors | ||||
Wavelength Engineering | ||||
5.2 Light and Semiconductors | ||||
Total Efficiency of Light Generation | ||||
Absorption and Emission of Light | ||||
5.3 Heterojunctions | ||||
Ideal Heterojunctions | ||||
Isotype Heterojunctions | ||||
Real Heterojunctions | ||||
5.4 Quantum Devices | ||||
Single and Multiple Quantum Wells | ||||
6. Principles of the Semiconductor LASER
6.1 LASER conditions | ||||
Interaction of Light and Electrons and Inversion | ||||
Light Amplification in Semiconductors | ||||
From Amplification to Oscillation: Second Laser Condition | ||||
6.2 Specific Topics | ||||
Turning on a Laser Diode | ||||
Laser Modes |
7.1 Basic Requirements and Design Principles | ||||
Products, Market, Materials, and Technologies | ||||
Some LED Concepts | ||||
Optimizing Light Confinement and Gain in Laser Diodes | ||||
Double Heterojunctions Specialities | ||||
7.2 Specialities | ||||
8.1 Some Basics to Device Speed | ||||
General aspects, time consuming processes | ||||
8.2 Dynamic Behavior of p-n-Junctions | ||||
General observations, small signal response | ||||
Switching junction diodes and bipolar transistors | ||||
9. Compound Semiconductor Technology
Mostly unfinished | ||||
9.1 General Remarks | ||||
Major differences to Si technology | ||||
9.2 Bulk Crystals | ||||
GaAs | ||||
9.3 Epitaxial Layers | ||||
General Remarks | ||||
Liquid Phase Epitaxy | ||||
Molecular Beam Epitaxy | ||||
10.1 SiC and Diamond | ||||
10.2 II - VI Semiconductors | ||||
10.3 Semiconducting Polymers | ||||
10.4 Special Applications |