A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| A, | |
| abbr. | Abbreviation |
| a | Activity |
| w | Angular frequency |
| B, | |
| bcc | Body centered cubic |
| k | Boltzmanns constant |
| C, | |
| CRT) | Cathode ray tube |
| CRT | Cathode ray tubes |
| r | Charge density |
| CD | Compact disc |
| cw | Continous wave |
| C | Coulomb |
| j | Current density |
| j | Current density |
| j | Current density |
| D, | |
| i.e. | Das heißt - that's to say; in other words |
| DK | Dielectric constant |
| c | dielectric susceptibility |
| m | Dipole moment |
| DC | Direct current |
| DRAM | Dynamic random access memory |
| E, | |
| E | Electrical field strength |
| D | Electrical flux density |
| n | Electron density |
| ESR | Electron spin resonance |
| q | Elementary charge |
| S | Entropy |
| F, | |
| fcc | Face centered cubic |
| EF | Fermienergy |
| metafiles | Files about the script |
| FPD | Flat panel display |
| F | Force |
| G | Free enthalpy |
| G, | |
| GMR | Giant magneto resistance |
| H, | |
| hcp | Hexagonally close packed |
| I, | |
| n | index of refraction |
| n | Index of refraction |
| ITO | Indium tin oxide |
| IC | Integrated circuit |
| U | Internal energy; also used for enthalpy |
| J,K,L, | |
| PZT | Lead zirconate titanate |
| Laser | Light amplification by stimulated emission and resonance |
| LED | Light emitting diode |
| LCD | Liquid crystal display |
| LCD | lLiquid Crystal Display |
| FL | Lorentz force |
| M, | |
| µr | Magnetic (relative) permeability of material |
| H | Magnetic field strength |
| B | Magnetic field strength |
| B | Magnetic flux density |
| m | Magnetic moment |
| µo | Magnetic permeability of vacuum |
| J | Magnetic polarization |
| J | Magnetic polarization |
| J | Magnetic polarization |
| MRAM | Magnetic random access memory |
| MRI | Magnetic resonance imaging |
| cmag | Magnetic susceptibiity |
| M | Magnetization |
| MOKE | Magneto optic Kerr effect |
| Tm | Melting point |
| ME | Microelectronic |
| MEMS | Microelectronic and mechanical systems |
| µ | Mobility |
| µ | Mobility |
| µ | Mobility of carriers |
| MPB | Morphological phase boundary |
| N, | |
| NA | Numerical aperture |
| O, | |
| OLED | Organic light emitting diode |
| ONO | Oxide-Nitride-Oxide |
| P, | |
| e0 | Permittivity constant |
| PSM | Phase shifting mask |
| P | Polarization |
| PVA | Polyvinyl alcohol |
| Q, | |
| QEO | Quadrato electro-optic effect |
| R, | |
| ROM | Read only memory |
| er | Relative dielectric constant; definition |
| t | Relaxation time |
| S, | |
| STM | Scanning tunneling microscope |
| S | Siemens |
| s | Specific conductivity |
| r | Specific resisitvity |
| r | Specific resistivity |
| s | Spin quantum number |
| T, | |
| ar | Temperature coefficient of resistivity |
| TEM | Transmission electron microscope |
| TCO | Transparent conducting oxides |
| U, | |
| UHV | Ultra high vacuum |
| V, | |
| V | Volume |
| W, | |
| y | Wave function |
| EA | Work function |
| X,Y,Z, | |
| e.g. | Zum Beispiel |
© H. Föll (Advanced Materials B, part 1 - script)