A (big) crystal cools down from its melting point Tm to room temperature Tr ( about 0o C) with T = Tm · exp – (l · t). The point defects present have a diffusion coefficient given by D = D0 · exp – (Em/kT). | |||||||||
How large is the average distance L that they cover during cooling down from some temperature T to Tr? | |||||||||
This is not an easy question. What you should do is: | |||||||||
Use the Einstein relation for the diffusion length (and forget about lattice factors), but consider that the diffusion coefficient is a function of time, i.e. | |||||||||
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Proceed by first finding the values of l for initial cooling rates at the melting point of 1 oC/s, 10 oC/s, 50 oC/s and, for fun, 104 oC/s. | |||||||||
Using the following substitution will help with the integration | |||||||||
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The integral now runs from u0 corresponding to t'0 to whatever value of u corresponds to t' = ¥. | |||||||||
You will obtain the following integral: | |||||||||
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This integral cannot be solved analytically. In order to get a simple and good approximation, you may use the linear Taylor expansion for 1/u around u0. | |||||||||
Show that for realistic u0 values you can replace 1/u by 1/u0 in a decent approximation and that you now can do the integral. | |||||||||
Now use typical values for melting temperatures, migration activation energies Em, and D0; e.g. from the backbone, two tables or diagrams given here. For missing values (e.g. D0), make some reasonable assumptions. | |||||||||
Plot L as a function of T for activation energies E = 1.0 eV, E = 2.0 eV, and E = 5 eV with the four cooling rates given above as parameter. | |||||||||
Play around a bit and draw some conclusions, e.g. with respect to
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Link to the Solution |
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4.2.1 Point Defects in Non-Equilibrium
Numbers for Point Defect Diffusion
Self-Diffusion and some Related Quantities in Si
Impurity Diffusion in Si - Arrhenius Plot
© H. Föll (Defects - Script)