A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| A,B, | |
| Buttler-Volmer | [1], |
| C, | |
| capacitance | [1], |
| continuity equation | [1], |
| Current and Voltage Oscillations | [1], [2], |
| D, | |
| damped current oscillation | [1], |
| Desynchronisation of local oscillators | [1], [2], |
| diffusion losses | [1], |
| E, | |
| elctropolishing | [1], |
| Electric field strength | [1], [2], |
| equivalent circuit | [1], |
| F, | |
| FFT-Impedance Spectroscopy | [1], [2], |
| G,H,I, | |
| impedance spectra | [1], |
| interface between silicon and silicon oxide | [1], |
| ion conducting channel | [1], |
| IV-Characteristics | [1], [2], |
| J,K,L, | |
| Lateral synchronisation of local Current Bursts | [1], [2], |
| local electrical field strength | [1], |
| local Oscillation Cycle | [1], [2], |
| M, | |
| mean current density | [1], [2], |
| mean oxide thickness | [1], |
| measurable quantities | [1], |
| Monte Carlo simulation | [1], |
| N, | |
| Nyquist-plot | [1], |
| O, | |
| ohmic losses | [1], |
| oscillation period | [1], [2], |
| oscillation regime | [1], |
| oxide growth and dissolution | [1], [2], |
| oxide layer thickness | [1], |
| oxide thickness destribution | [1], |
| P, | |
| porous silicon | [1], |
| Potential losses | [1], |
| Probability Functions | [1], [2], |
| Q,R,S, | |
| Si-HF-Contact | [1], |
| simulation | [1], |
| suboxide | [1], |
| T, | |
| Transient Current | [1], [2], |