Results of the Simulation

Moovie of oscillating Oxide layer

Implementing

  1. the continuity equation
  2. the probability functions
  3. and the synchronizing and desyncronizing mechanisms

into a Monte Carlo algorithm we get the following results of Fig. 7:

Current Density Mean Oxide Thickness Capacitance of Oxide Layer Roughness of Oxide Layer
local potential losses local oxide thickness HF-Oxide interface Oxide-Si interface
Potential losses correspond to the locations of Channels The mean oxide thickness defines the dynamics of Oxide growth The HF-Oxide interface mooves by chemical etching of the oxide layer The Oxide-Si interface mooves by oxide growing through "Channels"
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