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Subchapter 3.1: Thin Films - General |
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Interference causes the color of a
thin film and betrays its thickness? Explain! |
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Give examples of what "thin" could mean in relation to intrinsic
length scales. Provide (and discuss briefly) some intrinsic lengths, in particular with respect to semiconductors |
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Give a few number for the meaning of "thin":
- Thickness of a human hair »» ????
- Thickness of a gate oxide in an integrated transistor »»
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- Thickness of antireflection layers of optical lenses »»
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- Thickness of a thin film solar cell »»
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- Other examples you can come up with ???
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Give somer examples of thin film applications outside of semiconductor technology. |
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Give the equation for the capacity C of a parallel plate capacitor with plate area A
for a maximum voltage of 10 V. How can you achieve maximum capacity and what are the limits? Hint: Consider field
strength and relvant intrinsic length scales. |
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Subchapter 3.2: Mechanical Properties |
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How would you define the roughness of the two thin films shown? Give an equation if possible
and differentiate between the two cases. | |
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Give examples for a thin layer of material B on substrate A for which you would expect good
or bad adhesion, respectively: Give reasons for you expectation. | |
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The "surface" energy of glass is around g(Glas) 300 mJ/m2,
for a metal we might have g(Metal) » 2100 mJ/m2.
You deposit a noble metal. On which substrate would you expect better adhesion? | |
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Give an example of how one could measure the adhesion strength of a thin film. |
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The red thin layer (thickness dB) on the blue circular Si wafer substrate
(thickness dA >>dB) is under compressive stress s;
the wafer thus is warped with a radius of curvature = R. What would R be proportional to?
Hint: It is a two-dimensional problem. |
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Subchapter 3.3: Nucleation and Growth |
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What happens when first incoming atoms hits the surface of the substrate? Give at least 4
different possibilities. | | |
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Where would you expect the first imcoming atoms to be solidly bound? Use the proper terminology. |
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Define "sticking coefficient". Discuss the dependenc of the sticking coefficient for a given
system on the precise substrate condition for a given substrate. | |
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Explain briefly the major methods for investigations of the nucleation of thin films on substrates. |
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Explain how you get from interface energies to forces, and from forces to the wetting angle Q |
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Discuss and name the two major growth mode following from extreme values of Q |
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Discuss and name a third major growth mode | |
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Subchapter 3.4: Structure, Interface and Some Properties |
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What is epitaxial growth? Consider the possibility of epitaxial growth; giving possible conditions
(e.g. with respect to structures, lattice constants, ...) and use simple pictures: - A on A.
- A (fcc) on B (fcc).
- A (fcc) on C (hex).
- A (fcc) on B (fcc) with intermediate layer.
- ....
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B (fcc; (100)) with lattice constant aA is deposited on A (fcc; (100) with aB
= 0.95 aA. Sketch the structure for
- Thickness of B only a few atomic layers.
- Thickness of B > 50 nm
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Difficult! Sketch a pure edge misfit dislocation network on a {100}
interface plane for a misfit of 10 % for the case of
- Burgers vector of the dislocations is b = a<100>.
- Burgers vector of the dislocations is b = a/2<110>.
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Difficult! What would happen if the (square) network of misfit dislocations
on a {100} type interface would be changed from edge dislocations to screw dislocations? |
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What are the energetic reasons for introducing misfit dislocations into epitaxial interface it the layer
thickness is larger than a critical thickness? What determines the critical thickness? |
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Sketch the curve for the critical thickness dcrit in a dcrit
- misfit diagram, Try to give approximate numbers. |
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Enumerate and discuss structures obtainable with thin films but not
(easily) with bulk materials. Give examples for applications. |
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Give reasons why thin film properties can be quite different from bulk properties; give examples. |
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Name some technologically extremely important special thin film properties; discuss with actual numbers. |
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© H. Föll (Semiconductor Technology - Script)