Subchapter 3.1: Thin Films - General | ||
Interference causes the color of a thin film and betrays its thickness? Explain! | ||
Give examples of what "thin" could mean in relation to intrinsic length scales. Provide (and discuss briefly) some intrinsic lengths, in particular with respect to semiconductors | ||
Give a few number for the meaning of "thin":
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Give somer examples of thin film applications outside of semiconductor technology. | ||
Give the equation for the capacity C of a parallel plate capacitor with plate area A for a maximum voltage of 10 V. How can you achieve maximum capacity and what are the limits? Hint: Consider field strength and relvant intrinsic length scales. | ||
Subchapter 3.2: Mechanical Properties | ||||||
How would you define the roughness of the two thin films shown? Give an equation if possible and differentiate between the two cases. |
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Give examples for a thin layer of material B on substrate A for which you would expect good or bad adhesion, respectively: Give reasons for you expectation. | ||||||
The "surface" energy of glass is around g(Glas) 300 mJ/m2, for a metal we might have g(Metal) » 2100 mJ/m2. You deposit a noble metal. On which substrate would you expect better adhesion? | ||||||
Give an example of how one could measure the adhesion strength of a thin film. | ||||||
The red thin layer (thickness dB) on the blue circular Si wafer substrate
(thickness dA >>dB) is under compressive stress s;
the wafer thus is warped with a radius of curvature = R. What would R be proportional to? Hint: It is a two-dimensional problem. |
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Subchapter 3.3: Nucleation and Growth | ||||||
What happens when first incoming atoms hits the surface of the substrate? Give at least 4 different possibilities. | ||||||
Where would you expect the first imcoming atoms to be solidly bound? Use the proper terminology. | ||||||
Define "sticking coefficient". Discuss the dependenc of the sticking coefficient for a given system on the precise substrate condition for a given substrate. | ||||||
Explain briefly the major methods for investigations of the nucleation of thin films on substrates. |
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Explain how you get from interface energies to forces, and from forces to the wetting angle Q | ||||||
Discuss and name the two major growth mode following from extreme values of Q | ||||||
Discuss and name a third major growth mode | ||||||
Subchapter 3.4: Structure, Interface and Some Properties | ||
What is epitaxial growth? Consider the possibility of epitaxial growth; giving possible conditions
(e.g. with respect to structures, lattice constants, ...) and use simple pictures:
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B (fcc; (100)) with lattice constant aA is deposited on A (fcc; (100) with aB
= 0.95 aA. Sketch the structure for
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Difficult! Sketch a pure edge misfit dislocation network on a {100}
interface plane for a misfit of 10 % for the case of
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Difficult! What would happen if the (square) network of misfit dislocations on a {100} type interface would be changed from edge dislocations to screw dislocations? | ||
What are the energetic reasons for introducing misfit dislocations into epitaxial interface it the layer thickness is larger than a critical thickness? What determines the critical thickness? | ||
Sketch the curve for the critical thickness dcrit in a dcrit - misfit diagram, Try to give approximate numbers. | ||
Enumerate and discuss structures obtainable with thin films but not (easily) with bulk materials. Give examples for applications. | ||
Give reasons why thin film properties can be quite different from bulk properties; give examples. | ||
Name some technologically extremely important special thin film properties; discuss with actual numbers. | ||
3.6.1 Summary to: 3. Thin Films
© H. Föll (Semiconductor Technology - Script)