A typical MOS transistor of 200x (x = 0 .... 5) vintage has a "gate length" (= distance between source an drain) of about 0.5 µm and is run at about 3 V | ||
1.) What is the mobility the material (= semiconductor) must have for
4 GHz operation frequency? Discuss the result for known mobility values and consider the following points
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2.) How could you increase the speed for a given material
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Solution | ||
2.1.2 Ohm's Law and Classical Physics
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© H. Föll (MaWi 2 Skript)