Pictures to: Double Ribbons and the Stacking Fault Energes in Si

In what follows are some "originals" of the picturs used in the paper.
I do not have Fig. 3b and Fig. 6 anymore
     
 
Stacking fault energy Si
Fig. 2a in publication
 
Stacking fault energy Si
Fig. 2b in publication.
(a) Double ribbons close to the screw orientation imaged with a 224 reflection.(b) Double ribbons close to three different screw orientations imaged with a400 reflection. The attows indicate g.
 
Double ribbons in Si
Not a Fig. in the paper
Givews an idea of what you see
 
Double ribbons in Si
Fig. 3a in publication.
I do not have an original of Fig. 3b anymore
Double ribbons of fig. 2 (b) imaged with a 220 reflection. Note that one of the double ribbons is
completely out of contrast. (b) Double ribbon at A completely contained within the network. The
arrows indicate the direction of the 220 reflections used to form the weak-beam images, and the
character varies from near screw to about 30°
 
Double ribbons in Si
Fig 4 in publications with a kinematic bright field picture added.
Double ribbon imaged with a111 reflection. Note the change in contrast of theintrinsie
node, the extrinsie ones, and the double ribbon, on rreversing g. Thcnodes and the
double ribbon are in the screw orientation.

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go to 3.2 Double Ribbons and Stacking Fault Energies in Si

go to Pictures to: 3.1 TEM Work at Cornell University; 3.1.1. TEM Investigations of Grain Boundaries in Silicon

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© H. Föll (Archive H. Föll)