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3.2 Double Ribbons and Stacking Fault Energies in Si |
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3.2.1 Background |
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From the sintered grain boundary work, specimen with a small-angle twist boundary
on {111} resulted; they have been dealt with in detail before. Interruptions of the network by embedded amorphous SiO2
particles necessitated an adoption of the network at the crystalline – amorphous interface and it was my colleague
and friend Barry Carter who recognized some of these structures as so-called “double
ribbons” and also knew that these structures could be used to determine the stacking fault energy of intrinsic
and extrinsic stacking faults in silicon. That was still a hot issue in 1978
when we did this work. What you need is precision in deterring distances and this is not easy because the nominal magnification
of the electron microscope is not a very precise number. But I had become e an early HRTEM aficionado and taking direct
lattice pictures with their built-in scale allowed us to do rather good work. And a lot of work it was. |
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I would not have included this work here (it’s kind of special and technical)
but as it happens (and as I found out by accident) it is one of my more popular papers with 100 citations (Nov. 2022)
The topic is "Direct TEM Determination of Intrinsic and Extrinsic Stacking-Fault Energies"; see publication No.
18 in the publications list. 100 citations are lot for this field.
That’s probably because it was mostly written by Barry Carter who knew a lot more about the topic than I by then (and
now). It may be a bit hard to see why this article caused some minor excitement among the (probably no more than 50) cognoscenti
then. But in 1979 “dissociated” dislocations were still a hot topic, in particular in semiconductors. Read the
reproduction of the article to find out more.
I give you some of the original pictures here. |
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© H. Föll (Archive H. Föll)
