There are always several recombination channels active in parallel
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| High efficiency LED's need optimized recombination. | ||||||||||||
| Without "tricks" only a fraction of the light produced gets out of the semiconductor |
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| Index grating is essential | ||||||||||||
| Avoiding re-absorption is essential | ||||||||||||
| Defined recombination volumes are important | ||||||||||||
| Hetero junctions of the NnP or NpP type are the solution, but create problems of their own | ||||||||||||
| Hetero-interfaces must be defect free Þ Avoid misfit dislocations! | ||||||||||||
| Laser diodes are similar to LED's but need to meet two additional conditions |
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| 1. The rate of Stimulated emission, a new process predicted by A. Einstein concerning the interaction of light and electrons in the conduction band, must be at least as large as the rate of fundamental absorption | ||||||||||||
| Stimulated emission results in two fully coherent photons for one incoming photon and thus allows optical amplification. | ||||||||||||
| Strong stimulated emission his requires large non-equilibrium electron concentrations in the conduction band. Þstrong "pumping" is necessary, moving electrons up to the conduction band just as fast as they disappear by recombination. | ||||||||||||
| In semiconductor junctions pumping can be "easily" achieved by very large injection currents across a forwardly biased (hetero) junction.Þ cooling problem! | ||||||||||||
| 2. There must be some feed-back that turns an (optical) amplifier into an oscillator for one frequency | ||||||||||||
| Feed-back is achieved by partially transparent mirrors. | ||||||||||||
| Monochromatic output is achieved by the optical resonator forme by two exactly plan-parallel mirrors | ||||||||||||
| Only wavelengths l = 2L/i (i = integer)
that "fit" into the cavity will be able to exist. Together with the condition hn = hc/l = Eg the Laser wavelength is given |
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| Semiconductor Lasers now span the range from IR to UV; essential materials are all III-V's, in particular the GaN family. | ||||||||||||
| Molecular beam epitaxy is the deposition method of choice for epitaxial multilayer structures | ||||||||||||
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© H. Föll (Semiconductor Technology - Script)