Here are some product specification sheets taken directly from major suppliers for the 4H-SiC polytype. | |||
First, the 50.8 mm standard. Note that there is only one p-type wafer, that the resistivity is always very low or extremely large ("semi-insulating"), and that the "micropipe density" is a major parameter | |||
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Now the 50.8 mm standard. Note that there is only one p-type wafer, resistivities again are always very low or extremely large ("semi-insulating"), and there is no "ultra-low micropipe density" available in Sept. 2003. | |||
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The "Off-axis" specs together with the low resistivity in the "orientation" column tells us that these wafers are only intended as a substrates for an epitaxial layer. | |||
Now the 6H-SiC wafers: | |||
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Note that there is a lightly p-doped (1 - 5) Wcm wafer. | |||
No price quotes are given in the Internet. But SiC does not come cheaply. Prices of $250 - $500 (depending on specs) for one 50 mm wafer are presently (2003) asked. Anyway, there is progress: In 1995 it was more like $600 - $2000. | |||
For that kind of money you get several 300 mm Si wafers, which are far more perfect form a crystal quality point of view. It follows that if people are willing to pay that much money for so little, SiC must be useful to some. | |||
10.1.1 Silicon Carbide - Material Aspects
© H. Föll (Semiconductors - Script)