| Frame No Frame |
HyperscriptDefects in Crystals© H. Föll Contents |
Hyperscripts of AMAT: General Information Index |
|
1.1 Scope of the Course | ||
|
General outline, Relation to other courses: | ||
|
Required background knowledge | ||
|
Organizational remarks | ||
|
1.2 Topics for Seminar | ||
|
Suggested Topics for Seminar | ||
|
Rules for seminar | ||
|
1.3 General Classification and Properties of Defects | ||
|
Classification of defects | ||
|
Materials properties and defects | ||
|
The larger view and complications | ||
2. Properties of Point Defects
|
2.1 Intrinsic Point Defects and Equilibrium | ||
|
Single vacancies and interstitials | ||
|
Frenkel and Schottky defects | ||
|
Mixed point defects | ||
|
2.2 Extrinsic Point Defects and Agglomerates | ||
|
Impurity atoms; interaction with intrinsic defects | ||
|
Global and local equilibrium, agglomeration | ||
|
2.3 Point Defects in Semiconductors like Silicon | ||
|
The special status of Silicon with respect to point defects and diffusion | ||
|
2.4 Point Defects in Ionic Crystals | ||
|
Differences in notations, the role of the chemical potential | ||
|
Working with the different notation, examples | ||
3. Point Defects and Diffusion
|
3.1 General Remarks | ||
|
Ficks laws, relation between phenomenological view and atomic view | ||
|
Technological relevance and open questions | ||
|
3.2 Atomic Mechanisms of Diffusion | ||
|
Vacancy and interstitial mechanisms, kick-out and exotic mechanisms | ||
|
Self diffusion | ||
|
Impurity diffusion | ||
|
3.3 Experimental Approach to Diffusion Phenomena | ||
|
Review of methods | ||
|
Tracer methods | ||
|
Working with the different notation, examples | ||
4. Experimental Techniques for Studying Point Defects
|
4.1 Equilibrium Techniques | ||
|
Differential volume expansion | ||
|
Positron annihilation | ||
|
Some other methods | ||
|
4.2 Non-Equilibrium Techniques | ||
|
Quenching and related methods | ||
|
Some specialities | ||
|
Specialties | ||
|
Ionic crystals and special methods | ||
|
5.1 Basics of Dislocations Crystals | ||
|
Burgers- and line vectors. | ||
|
Volterra definition of dislocations | ||
|
5.2 Elasticity Theory, Energy and Forces | ||
|
Elasticity theory of dislocations | ||
|
Energies, forces, interactions | ||
|
5.3 Movement of Dislocations | ||
|
Basics, Peierls potential, kinks and jogs | ||
|
Climb processes, interaction with point defects | ||
|
5.4 Partial Dislocations and Stacking Faults | ||
|
Energy consideration, partial dislocations in fcc crystals | ||
|
Stacking faults and point defects | ||
|
5.5 Dislocations and Plastic Deformation | ||
|
Some general considerations, theory of hardening | ||
|
Some specifics for important lattices and materials | ||
6. Observation of Dislocations
|
6.1 Decoration and Microscopy | ||
|
Preferential etching | ||
|
IR - microscopy and others | ||
|
6.2 X-ray Topography | ||
|
Principle and examples | ||
|
6.3 Transmission Electron Microscopy | ||
|
Basics and contrast conditions | ||
|
Possibilities and limitations | ||
|
7.1 Coincidence Lattice. O-lattice and DSC lattice for grain Boundaries | ||
|
Twin boundaries to get the idea | ||
|
The coincidence lattice and the O-lattice | ||
|
The DSC-lattice and grain boundary dislocations | ||
|
7.2 Case Studies | ||
|
Tilt boundaries | ||
|
Twist boundaries | ||
|
Complicated Boundaries | ||
|
7.3 Bollmanns O-Lattice Theory | ||
|
Basic Concept | ||
|
Working with the O-Lattice | ||
|
The Significance of the O-Lattice | ||
|
8.1 Generalization of the O-lattice model | ||
|
Misfit dislocations | ||
|
a more general view | ||
|
8.2 Case studies | ||
|
Pd2Si as a simple model of a phase boundary | ||
|
The Ni - Si systems and its intricacies | ||
|
8.3 Steps in Interfaces | ||
|
The Relation Between Steps and Dislocations in S=3 Boundaries | ||
|
Open Questions | ||