Pictures to: IBM T.J. Watson Research Center

	Pictures to: 4. IBM T.J. Watson Research Center
	4.1 TEM of Silicon - Silicide Interfaces Publication 25
	What follows are the pictures to publication 25 (Cross-sectional TEM of silicon-silicide interfaces).
		One of the pictures (FIg. 2 in the paper) shows the very first high-resolution image of a heterogeneousa interface.

Fig. 1 In Publication 1
What you see going from th from bottom of the picture to the to top: Si; nothing (because of denomination), Pd₂Si (structuress since very likely epitaxial to the Si)
and unreacted Pd The picture demonstrates the problems of cross-sectional TEM with heterogeneous samples.
Many reasons for stress lead to bending and in thise case even to delamination of the Pd2Si / Pd layer from the Si substrate.

FIG. 1. Thin layer of Pd₂ Si and Pd on Si. The layer is severely bent (comingout of the paper plane in the left-hand corner).

Fig. 2 In Publication 1. Epitaxial Pd₂Si (top) on Si (bottom)
My most treasured picture. It is the very first HRTEM of a heterogeneous interface ever taken. Wasn’t easy then.

Fig. 2. Lattice image of the Pd2 Si-Si interface. The spacing oft he Si {111}fnnges . (e.g. parallel to the interface) is 0.31 nm. A Burgers-like circuit isdrawn in, showmg 79 Pd2 Si {22-40} fringes for 75 Si {111} fringes

Auxiliary picture to Fig. 2 In Publication 1
Showing that ther eis morre than one picture and a "large" pseudo Burgers circuit.
The "cut" resukts from glueing two pictrues together.

Auxiliary picture to Fig. 2 In Publication 1
Just for showing details. The bright spot on the lower right is simply light emitted by the hot cathode
way up in there in the microscope column. You only get that way down on the screen fior a perfectly aligned microscope.

Fig. 3 In Publication 1.

FIG. 3. Heavily faceted NiSi2 2 on {100} Si. Parts of the silicide have beenremoved during ion milling; the surface of the silicide therefore is not theoriginal silicide surface.

Fig. 4 In Publication 1
Another "first" as far as HRTEM of heterogeneous interfaces are concerned

Fig. 5 In Publication 1.

FIG. 5. Misfit dislocations in the Si-NiSi {100J} interface and dislocationsin the silicide.

Fig. 6 In Publication 1

FIG. 6. Misfit dislocations in the Ni-NiSi2 interface viewed flat-on. A hex-agonal network (lower right-hand corner; one set of dislocations not incontrast). a square network (Ieft-hand corner; one set of dislocations not incontrast), and one irregular rectangular network can be seen.

Fig. 7 In Publication 1.

Fig. 8 In Publication 1.
A picture that proves my original point: Even in the author's print of the journal article you can't see anything in Fig. 8
Forghget copies and scans.

FIG. 8. Lattice image of the Si-NiSi2 interface on a {111} plane. The NiSi2 istwinned with respect to the Si matrix; this also can be seen from the typicaltwin-diffraction pattern. The interface contains a dislocation at tthe darkspot.

Fig. 9 In Publication 1.

FIG. 9. Misfit dislocations in the interface between NiSi2 and {1111} Si.

Similr to Fig. 10

FIG. 10. Flat-on view of misfit dislocations in the Si-NiSi2 {111} interface.The micrograpb was taken with multibeam ditfraction conditions close tothe {111} pole

Auxiliary to Fig. 10 In Publication 1.
Once more the remacable dislocations structure in the direct and twinned epitaxial growth of the NiSi₂on Si.

Fig. 11 in Publication 1.
The PtSi layer is not transparetn to the electron beam at this picture.
It does show the interface geometry and the existence opd stress at the protrusion in the inteface.

FIG. 11. Interface between Si and PtSi (two sampies wirb the silicide sideglued together).

With frame

1. Introduction, 1.1 .Why Oh Why? 1.1.1. What it is all about

Pictures to: 4. IBM T.J. Watson Research Center

4.1 TEM of Silicon - Silicide Interfaces Publication 25