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- C. Fang, S. Langa, L. Jiang, J. Carstensen, E. Foca, and H. Föll, "Electrochemical pore etching
in Germanium", in Mat. Res. Soc. Symp. Spring meeting 2005 - Abstracts, 3.8 (2005).
- S. Mathijssen, J. Carstensen, H. Föll, G. Voorwinden, and H. Stiebig, "CELLO measurements of CIGS and µcSi
solar cells", in Mater.Res.Soc.Symp.Proc. 865, F5.30.1, San Francisco (2005).
- H. Föll, J. Carstensen, and S. Frey, "Porous and Nanoporous Semiconductors and Emerging Applications",
in Sensor, and Gas Separation Applications, eds. S.W. Lu, H. Hahn, J. Weissmuller, and J.L. Gole, R12.1, Mater. Res. Soc.
Symp. Proc. 876E, Warrendale, PA (2005). (114 citatipons)
- I. Tighineanu, S. Langa, H. Föll, and V. Ursachi, Porous III-V Semiconductors, Stiinta, Chisinau (2005).
That is a book (for which I didn't do much writing)
- V. Kochergin and H. Föll, "Effective medium approach for calculation of linear and nonlinear properties of
porous semiconductor composites", Mater.Res.Soc.Symp.Proc. 881E, CC3.1.1 (2005).
- E. Spiecker, M. Rudel, W. Jäger, M. Leisner, and H. Föll, "Interface polarity and shapes of electrochemically
etched pores in InP", in Proceedings Microscopy Conference 2005, 6. Dreiländertagung 2005, Davos, Switzerland,
28. August - 2. September 2005, PSI Proceedings, 232, Paul Scherrer Institut (2005).
- J. Carstensen, M. Christophersen, S. Lölkes, E. Ossei-Wusu, J. Bahr, S. Langa, G. Popkirov, and H. Föll, "Large
area etching of porous semiconductors", Phys. Stat. Sol. (c) 2(9), 3339 (2005). (20 citatipons)
- S. Langa, J. Carstensen, I.M. Tiginyann, and H. Föll, "Nucleation and growth of macro pores on (100) n-type
Ge", Phys. stat. sol.(c) 2(9), 3237 (2005). (10 citatipons)
- S. Langa, S. Lölkes, J. Carstensen, M. Hermann, G. Böttger, I.M. Tiginyanu, and H. Föll, "Engineering
the morphology of porous InP for waveguide applications", Phys. stat. sol.(c) 2(9), 3253 (2005). (10
citatipons)
- H. Elhouichet, S. Daboussi, H. Ajlani, A. Najar, A. Moadhen, M. Oueslati I.M. Tiginyanu, S. Langa, and H. Föll,
"Strong visible emission from porous GaP doped with Eu and Tb ions", J. Luminescence 113, 329 (2005) (27
citatipons)
- C. Fang, H. Föll, and J. Carstensen, "Electrochemical
pore etching in Germanium", J. Electroanal. Chem. 589, 259 (2006) (103 citatipons)
- C. Fang, H. Föll, and J. Carstensen, "Long Germanium nanowires prepared by electrochemical etching",
Nano Lett. 6(7), 1578 (2006) (55 citatipons)
- H. Föll, J. Carstensen, and E. Foca, "Self-induced oscillations in Si and other semiconductors", Int.
J. Mat. Res. 2006(7) (2006) (8 citatipons)
The journal was in honor of Prof. Knut Urban; I was asked to write an article
- S. Keipert, S. Frey, J. Carstensen, H. Föll, and J.-N. Chazalviel, "SEM investigation, in-situ FFT impedance
analysis and modeling of the formation of nanoporous silica with self-organized macrostructures", Proc. E-MRS Nizza
, (2006). (6 citatipons)
- F. Cheng, J. Carstensen, and H. Föll, "Electrochemical pore etching in Ge", Materials science in semiconductor
processing , 9(4-5), 694 (2006). (12 citatipons)
- J. Carstensen, A. Schütt, G. Popkirov, and H. Föll, "Fast CELLO measurements for defect identification
and loss quantification of solar cells", in Proceedings of the 21th European Photovoltaic Solar Energy Conference, 2AO.3.4, Dresden (2006).
- A. Schütt, J. Carstensen and H. Föll, "Quantitative analysis of local serial resistance and diode losses
using the CELLO technique", in Proceedings of the 21th European Photovoltaic So-lar Energy Conference, 1BV.2.36, Dresden (2006)
- H. Föll, J. Carstensen, and Stefan Frey, "Porous and Nanoporous Semiconductors and Emerging Applications,"
Journal of Nanomaterials: Nanoporous and Nanostructured Materials for Catalysis, Sensor, and Gas Separation Applications,
2006, Article ID 91635 (2006). (114 citatipons)
- F. Daschner, R. Knöchel, E. Foca, J.Carstensen, V.V. Sergentu, H. Föll, and I.M. Tiginyanu}, "Photonic
crystals as host material for a new generation of microwave components", Adv. Radio Sci, 4, 17, (2006) (6
citatipons)
- H. Jacobsen, H.-J. Quenzer, B. Wagner, K. Ortner, and Th. Jung, "High-rate sputtering of thick PZT layers for MEMS
actuators", Proc. MEMS 2006, Istanbul, 214 (2006) (6 citatipons)
- K. Ortner, H. Jacobsen, D. Koeßler, Th. Jung, H.-J. Quenzer, R. Bandorf, and H. Lüthje,
"Novel method for high rate deposition of Lead Zirconate Titanate piezoelectric films", Proc. 10th International
Conference on Plasma Surface Engineering (2006) (9 citatipons)
- K. Ortner, D. Koeßler, Th. Jung H. Jacobsen, and H.-J. Quenzer, "Novel method for high
rate deposition of Lead Zirconate Zitanate piezoelectric films", Proc. Plasma Processes and Polymers (2006)
(14 citatipons)
- V. Kochergin and H. Föll, "Novel optical elements made from porous Si", Mater. Sci. Eng. R 52(4-6), 93
(2006) (review) (64 citatipons)
- V.V. Sergentu, V.V. Ursaki, I.M. Tiginyanu, E. Foca, H. Föll, and R.W. Boyd, "Focusing slabs made of negative
index materials based on inhomogeneous dielectric rods", Phys. Stat. Sol. (a) 203(6), R48-R50 (2006)
- H. Jacobsen, Th. Jung, K. Ortner, K.I. Schiffmann, H.-J. Quenzer, and B. Wagner, "Development
of a piezoelectric Lead Titanate thin film process on Silicon substrates by high rate gas flow sputtering", Sensors
and Actuators A 133, 250 (2007). (14 citatipons)
- H. Jacobsen, H.-J. Quenzer, B. Wagner, K. Ortner, and Th. Jung, "Thick PZT layers deposited
by gas flow sputtering", Sensors and Actuators A 135, 23 (2007).
(24 citatipons)
- C. Fang, J. Carstensen, and H. Föll, "Electrochemical pore etching in n- and p-type Ge", Solid State
Phenomena, 121-123, 37, (2007) (6 citatipons)
- J. Carstensen, H. Föll, E. Foca, and C. Fang, , "A stochastic model for current and voltage oscillation of
the Si electrode", Solid State Phenomena, 121-123, 1115 (2007) (1 citatipons)
- V. Kochergin, V. Zaporojtchenko, H. Takele, F. Faupel, and H. Föll, "Improved effective medium approach: Application
to metal nanocomposites", J. Appl. Phys., 101(2), 024302 (2007) (27 citatipons)
- M. Kemell, M. Ritala, M. Leskelä, E. Ossei-Wusu, J. Carstensen, and H. Föll, " Si/Al2O3/ZnO:Al capacitor
arrays formed in electrochemically etched porous Si by atomic layer deposition", Microelectronic Engineering 84, 313
(2007). (52 citatipons)
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