LOCOS with Sacrificial Poly-Silicon

	Here is a comparison of the LOCOS process with and without some sacrificial poly-Si:
		Provided, some of the oxide is removed by an "etch-back" process, the lateral extension can be kept somewhat smaller than in the conventional case.
	While this makes things quite complicated, the final versions of the LOCOS process were even more complicated.

With frame

6.1.2 LOCOS Process

© H. Föll (Semiconductor Technology - Script)