2.3.3 Summary to: 2.3. III-V Semiconductors

	III-V semiconducrors combine the group III elements Al, Ga, In) with the group V elements N, P , As, Sb; giving 12 possible combinations.			Properties Si GaAs InP GaP GaN In0,53Ga0,47As Band gap [eV] 1,12 1,42 1,35 2,26 3.39 0,75 Type Indirect Direct Direct Indirect Direct Direct Lattice fcc fcc fcc fcc hex fcc
		The most important ones are probably GaAs, InP GaP and GaN
		Band gap energies and types vary; lattices are zincblende / sphalerite (= fcc) or wurtzite ( = hex).
	Ternary and quaternary (IIIxIII1-xVyV1-y) compounds are relatively easy to make.
		Properties like band gap, lattice constant, refractive index then adjustable to some extent.
		Main materials for optoelectronic products. Some high-speed and sensor applications.
		"Master diagram" = bandgap vs. lattice constant is of elementary importance for semiconductor technology.
		Exercise 2.3-1 All Class Exercises to 2.3

© H. Föll (Semiconductor Technology - Script)