Frame No Frame |
Hyperscript"Electronic Materials"© H. Föll Matrix of Modules with Exercises |
Hyperscripts of AMAT: General Information Index |
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This matrix contains all modules (i.e. HTML files) of the Hyperscript and most exercise and exams questions. Incomplete modules will be finished and more modules will be added in due time. There are three main levels for organizing the modules: | |
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Basics Contains some reference information and on occasion longer texts on background knowledge that you should be familiar with. |
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Learning (main part) Contains everything that you should know after taking the course. |
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Advanced Supplies knowledge beyond the scope of the course that is of some interest. Includes, on occasion, also elaborations about historical, strange or funny stuff relating to topics of the course. |
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The main part ("learning") is further subdivided in 4 (vertical) columns and the (horizontal) chapters and sub-chapters which define the matrix. The columns "backbone I" and "backbone II" constitute the hard core of the Hyperscript; the columns "illustrations" and "exercises" intend to help in understanding and to practical applications of what has been learned. | |
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The cells of the matrix contain all the modules,
identified by their filename. The first letter of a filename has a specific
meaning not important in this context. The numbers have the following meaning:
1. number=chapter 2. number=subchapter 3. number=running integer |
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Color coding of entries | |
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Blue: Finished to a large degree | |
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Red: Unfinished to a large degree | |
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Dark green: Contains JAVA or animation | |
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Light green: "Multiple Choice" Exercises | |
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Purple: Required reading Module. | |
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Pink: Summaries | |
p=problem (big) q=question (short) |
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Basics | Backbone I | Backbone II | Illustrations |
Exercises Script |
Exercises
class, examination |
Advanced |
1. Introduction |
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1.1 Scope of the Course | ||||||
r1_1_1 General Remarks r1_1_2 Seminar |
p1_1_1 People forget g1_1_2 Illustrating tables g1_1_3 Skeleton foil |
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1.2 Introduction to the Course | ||||||
r1_2_1 General Remarks r1_2_2 Materials and Products |
p1_2_1 Silicone vs. silicon |
t1_2_1 t1_2_2 t1_2_3 t1_2_4 t1_2_5 t1_2_6 t1_2_7 oral presentations t1_2_8 Check list |
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1.3 Required Reading and Exercises | ||||||
r1_3_1 General Remarks r1_3_2 Ohms Law 1 r1_3_3 Ohms Law 2 r1_3_4 Hall effect r1_3_5 Averaging vectors |
e1_3_1 Numbers µ s1_3_1 Solution e1_3_1 e1_3_2 Numbers v0, t, l s1_3_2 Solution e1_3_1 e1_3_3 4 Ghz processor s1_3_3 Solution e1_3_3 c1_3_1 Conductivity 1 c1_3_2 Conductivity 2 c1_3_3 Hall effect |
q1_3_4-1 Hall effect |
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2. Conductors |
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2.1 Definition and General Properties | ||||||
b2_1_3 Function generator |
r2_1_1 Metals r2_1_2 Alloys r2_1_3 Non-metals r2_1_4 Summary |
t2_1_1 Prop. Metals t2_1_2 Resid. resistance Na g2_1_1 Al on different substr. g2_1_2 r von T |
c2_1_1 Metals c2_1_2 Alloys c2_1_3 Non-metals c2_1_4 mc summary |
p2_1_1-1 Conducting wire p2_1_1-2 Four-point probe p2_2_1-1 Text books and wires |
t2_1_1 Requirements ICs t2_1_2 Forgetting r(T) |
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2.2 General Applications | ||||||
r2_2_1 Conductors r2_2_2 Contacts r2_2_3 Resistors and Heating r2_2_4 Summary |
t2_2_1 Properties Cu alloys t2_2_2 Ag based contacts t2_2_3 Phase diagram t2_2_4 Conducting polymer t2_2_5 Heating elements t2_2_6 MoSi heater g2_2_1 Max. T heating elem. |
c2_2_1 Applications |
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2.3 Special Applications | ||||||
r2_3_1 Thermionic Emission r2_3_2 Field enhanced/Tunneling r2_3_3 Thermoelectric Effects r2_3_4 Summary |
e2_3_1 Richardson Equation s2_3_1 Solution e2_3_1 c2_3_1 Electron emission c2_3_3 Thermionic Effects c2_3_4 mc summary |
t2_3_1 Tunneling t2_3_2 Thermoelectric effects |
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2.4 Ionic Conductors | ||||||
r2_4_1 General Remarks r2_4_2 Debye Length r2_4_3 Nernsts Law r2_4_4 Summary |
e2_4_1 Field Screening s2_4_1 Solution e2_4_2 e2_4_2 Nernst equation s2_4_2 Solution e2_4_1 c2_4_4 Ionic conductors |
p2_4_1-1 Ionic conductivity p2_4_2-1 Screening in metals |
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r2_5_1 2. Conductors - Summary |
c2_5_1
mc Summary |
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3. Dielectrics |
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3.1 Definitions and General Relations | ||||||
b3_1_1 Gauss law |
r3_1_1 Basics r3_1_2 Summary |
c3_1_1 Dielectrics general |
p3_1_1-1 Plate capacitor q3_1_1-2_old Point source q3_1_1-3_old Gauss and plate capacitor |
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3.2 Polarisation Mechanisms | ||||||
b3_2_1 Attraction point - sphere b3_2_2 Spherical Coordinates |
r3_2_1 General remarks r3_2_2 Electronic polarization r3_2_3 Ionic polarization r3_2_4 Orientation polarization r3_2_5 Summary/generalization r3_2_6 Clausius-Mosotti r3_2_7 Summary |
t3_2_1 Mistakes in books |
e3_2_1 Max. DK water s3_2_1 Solution 3.2-1 e3_2_2 Interface polarization s3_2_2 Solution 3.2-2 e3_2_3 Electronic polarization s3_2_3 Solution 3.2-3 c3_2_1 Polarization mechanisms c3_2_2 Electronic Polarization c3_2_3 Ionic Polarization c3_2_4 Orientation polarization c3_2_5 Summary/generalization c3_2_7 mc summary |
p3_2_2-1 Electronic polarization p3_2_3-1 Ionic polarization p3_2_4-1 Orientation polarization p3_2_4-2 Boltzmann distribution p3_2_4-3 Langevin function |
t3_2_1 Paul Langevin |
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3.3 Frequency Dependence of the Dielectric Constant | ||||||
b3_3_1 Harmonic oscillator b3_3_2 Fourier transforms b3_3_3 Complex notation |
r3_3_1 General remarks r3_3_2 Dipole relaxation r3_3_3 Resonance r3_3_4 Complete e(w) r3_3_5 Summary |
t3_3_1 Dielectric function |
c3_3_4 Complete e(w) |
p3_3_3-1 Resonant system p3_3_3-2 Dipole resonance q3_3_4-1 Dielectric function p3_3_4-1 Real dielectric function |
b3_3_1 Strange words t3_3_1 Kramers-Kronig t3_3_2 Beer and Relaxation t3_3_3 Frequency dependence |
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3.4 Dynamic Properties | ||||||
r3_4_1 Dielectric losses r3_4_2 Summary |
c3_4_1 Dielectric losses |
q3_4_1-1 Defrosting p3_4_1-1 Loudspeaker cables p3_4_1-2 Power lines |
t3_4_1 Cooking with microwaves |
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3.5 Electrical Breakdown and Failure | ||||||
r3_5_1 General r3_5_2 Breakdown Mechanisms r3_5_3 Summary |
c3_5_1 Dielectric breakdown |
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3.6 Special Dielectrics | ||||||
r3_6_1 Piezo electricity and relations r3_6_2 Ferro electricity r3_6_3 Summary |
t3_6_1 Piezo electricity t3_6_2 Electrostriction t3_6_3 ferro-electrics |
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3.7 Dielectrics and Optics | ||||||
b3_7_1 Basic optics b3_7_2 Fresnel laws |
r3_7_1 Basics r3_7_2 Complex index of refraction r3_7_3 Uses of complex n r3_7_4 Summary |
t3_7_1 Complex n Si |
p3_7_1-1 Reflection at ionic Crystals |
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r3_8_1 3. Dielectrics- Summary |
c3_8_1
Dielectrics |
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4. Magnetic Materials |
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4.1 Definitions and General Relations | ||||||
b4_1_1 Comparison magn. - electr. |
r4_1_1 Basics r4_1_2 Dipole origin r4_1_3 Classification r4_1_4 Summary |
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c4_1_2 Dipole origin c4_1_3 Classification c4_1_4 mc summary |
q4_1_3-1 Magnetization Fe |
t4_1_1 Magnetic monopoles t4_1_2 Total magnetic moment t4_1_3 Ferromagnetic materials |
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4.2 Dia- and Paramagnetism | ||||||
r4_2_1 Diamagnetism r4_2_2 Paramagnetism r4_2_3 Summary |
p4_2_2-1 Paramagnetic O2 sensor |
t4_2_1 Diamagnetism t4_2_2 Paramagnetism |
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4.3 Ferromagnetism | ||||||
r4_3_1 Mean field theory r4_3_2 Beyond mean field r4_3_3 Magnetic domains r4_3_4 Domain movement r4_3_5 Losses; frequency r4_3_6 Hard/soft magnets r4_3_7 Summary |
i4_3_1 Domain structures |
e4_3_1 Max. magnetization s4_3_1 Solution 4.3-1 e4_3_2 Magnetic moments Fe, Ni, Co s4_3_2 Solution 4.3-2 c4_3_1 Mean field theory c4_3_3 Magnetic domains c4_3_4 Domain movement c4_3_5 Losses and frequency c4_3_7 mc summary |
q4_3_4-1 Domains p4_3_3-1 Domains in bicrystal |
t4_3_1 QT of ferromagnetism t4_3_2 Giant magnetostriction t4_3_3 Hystereses losses t4_3_4 Complex permeability t4_3_5 Magnetostriction |
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4.4 Technical Materials and Applications | ||||||
r4_4_1 Magnetic materials r4_4_2 Summary |
c4_4_1 Applications |
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4.5 Specialities | ||||||
r4_5_1 Magnetic storage |
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r4_6_1 4. Magnetic Materials - Summary |
c4_6_1
mc Summary |
p4_6_1-1 Magnetism 1 |
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5. General Aspects of Silicon Technology |
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5.0 Required Reading | ||||||
r5_0_1 Basic bipolar r5_0_2 Basic MOS r5_0_3 Summary |
c5_0_1 Required reading |
p5_0_2-1 MOSFET |
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5.1 Basic Considerations for Process Integration | ||||||
b5_1_1 RC time constant |
r5_1_1 What is integration? r5_1_2 Integrating transistors r5_1_3 Integrating connections r5_1_4 MOS transistors r5_1_5 Integrated CMOS r5_1_6 Summary |
i5_1_1 Cross section DRAM |
c5_1_1 What is integration? c5_1_2 Integrating transistors c5_1_3 Integrating connections c5_1_4 Integrated MOS transistor c5_1_5 Integrated CMOS c5_1_6 mc summary |
q5_1_2-1 Transistor bipolar q5_1_2-2 Transistor MOS p5_1_4-1 Scaling p5_1_6-1 Transistor integration |
t5_1_1 Polyimide Story |
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5.2 Process Integration | ||||||
r5_2_1 Chips on wafers r5_2_2 Packaging r5_2_3 Summary |
i5_2_1 Processes + materials 1 i5_2_2 Processes + materials 2 i5_2_3 Processes + materials 3 i5_2_4 Flats |
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5.3 Cleanrooms, Particles and Contamination | ||||||
r5_3_1 Cleanrooms r5_3_2 Summary |
i5_3_1 Particles on chips i5_3_2 Human particles i5_3_3 Cleanroom garments i5_3_4 Unexpected i5_3_5 The air |
t5_3_1 Cleanroom |
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5.4 Development and Production of a New Chip Generation | ||||||
r5_4_1 Money and time r5_4_2 Working in D+P r5_4_3 Generation sequences r5_4_4 Summary |
i5_4_1 Moore law break down i5_4_2 Cost of Chip production i5_4_3 DRAM prizes i5_4_4 First Silicon i5_4_5 Chip size development i5_4_6 Real yield curves |
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r5_5_1 5. General Aspects of Silicon Technology - Summary |
c5_5_1
mc Summary |
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6. Materials and Processes for Silicon Technology |
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6.1 Silicon | ||||||
r6_1_1 Silicon r6_1_2 Silicon crystals r6_1_3 Summary |
r6_1_3 Other Silicon uses |
i6_1_1 CZ crystal growth i6_1_2 Si crystal i6_1_3 Complete wafer process i6_1_4 Poly-Si Specs i6_1_5 Wafer Specs i6_1_6 Necking |
c6_1_2 Si crystal and wafer |
p6_1_2-1 Si crystal growth p6_1_3-1 Si production |
t6_1_1 Alternative poly-Si productions t6_1_2 Crystal growth - science & art t6_1_3 FZ crystal growth t6_1_4 Biography Czochralski Article Historic review Si Article New developments Si crystals |
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6.2 Oxidation and Doping | ||||||
r6_2_1 Oxidation r6_2_2 LOCOS process r6_2_3 Summary |
i6_2_1 Forms of SiO2 i6_2_2 LOCOS with poly-Si i6_2_3 HRTEM ONO i6_2_4 Furnaces |
c6_2_1 Si oxide |
p6_2_1-1 Oxidation p6_2_1-2 Oxidation 2 |
t6_2_1 Deal-Grove oxidation t6_2_2 Complications - oxides t6_2_3 Box insulation t6_2_4 Oxide edge disl. and TEM |
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6.3 Chemical Vapor Deposition | ||||||
r6_3_1 Epitaxy r6_3_2 Oxide CVD r6_3_3 Nitride, Poly, rest CVD r6_3_4 Summary |
i6_3_1 Poly-Si |
c6_3_3 CVD general |
t6_3_1 FOBIC |
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6.4 Physical Processes for Layer Deposition | ||||||
r6_4_1 Sputter deposition r6_4_2 Ion implantation r6_4_3 Miscellaneous techniques r6_4_4 Summary |
i6_4_1 Defects after I2 |
c6_4_1 Sputter, contact hole c6_4_1 Ion implantation c6_4_3 Miscellaneous techniques c6_4_4 mc summary |
q6_4_3-1 Contact hole 1 p6_4_3-1 Contact hole 2 q6_4_3-1 Contact hole 1 p6_4_4-1 Doping technoques |
t6_4_1 Spiking t6_4_2 Electromigration t6_4_3 Sputter technologies t6_4_4 Doping trenches t6_4_5 I2 special Article: Eltran SOI Article: Eltran process |
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6.5 Etching Techniques | ||||||
r6_5_1 Chemical etching r6_5_2 Plasma Etching r6_5_3 Summary |
i6_5_1 Wet chemistry and money |
p6_5_2-1 Hole etching |
t6_5_1 Dry etch special |
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6.6 Lithography | ||||||
r6_6_1 Basic lithography; reticles r6_6_2 Resist, steppers r6_6_3 Summary |
p6_6_1-1 Structuring 1 |
t6_6_1 CaF2 lens t6_6_2 Advanced lithography |
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6.7 Mysterious Silicon - Unclear Properties and Present Day Research | ||||||
r6_7_1 Electrochemistry r6_7_2 Summary |
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r6_8_1 6 Materials and Processes for Silicon Technology - Summary |
c6_8_1
mc Summary |
p6_8_1-1 Deposition / Doping p6_8_1-2 Making transistors |
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Basics | Backbone I | Backbone II | Illustrations | Exercises | Advanced | |
Module Count (finished modules only) | ||||||
8 | 69 | 9 | 48 | 27 | 34 | |
Grand Total: 195 |