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Which group will deal with which topic will be decided in the first week of the class. | |
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You may choose your subject from the list, or suggest a subject of your interest which is not on the list. | |
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Presentation will be at the second half of the term (or, if so demanded, in the semester break); the beginning date depends on the number of participants | |
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You will get some materials to start you and help from teaching assistents |
List of Topics
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Thermodynamics of Point Defects in Ionic Crystals | |
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Explain the different formal concepts of looking at point defects with the "metallurgist" approach and the "chemical potential" approach | |
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Deal with a few examples in both approaches | |
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Expand the chemical potential approach to some specific examples as e.g. an oxygen sensors. | |
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Point Defect complexes in Silicon Crystals | |
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Start from point defects in thermal equilibrium; consider their agglomeration during cooling | |
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Historical/Experimental: The A-,B-,C,-, D-defects, the interstitial controversy | |
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Present view; simulation and role of oxygen/carbon | |
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Point Defects and Diffusion in
Silicon 20.12.99. |
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The self-diffusion problem; role of interstitials; unknown parameters | |
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Diffusion of dopants and other substitutional impurities | |
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Interstitialcy mechanism and significance | |
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State of the art: Complete simulation of all point defect reactions. | |
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Dislocations and Plastic
Deformation in Hexagonal Crystals 10.1.2000 |
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Describe the specialities of plastic deformation in hex. crystals as a function of the crystal and defect symmetry | |
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Give examples, discuss the technical importance. | |
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Dislocations and Plastic
Deformation in bcc Crystals |
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Describe the specialities of plastic deformation in bcc crystals. Consider glide systems, the role of screw dislocations | |
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Cinsider low temperatur deformation; twinning as a deformation mode | |
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Memory Shape Alloys 17.1.2000 |
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History, basic structures and mechanisms | |
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Reversibel deformation - defects and defect mechansims involved | |
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Applications, state of the art, outlook | |
Defects in Quasicrystals 24.1.2000 |
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History, general background for periodic tilings in 2 Dimensions | |
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Quasicrystal sas projections from 6-dim. crystals | |
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Point defects and diffusion | |
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Phasons and quasi-dislocations | |
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State of the art and problems | |
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X-Ray Methods for Investigating
Defects |
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General considerations | |
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Loking at Bragg peaks and in between Bragg peaks | |
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Defect imaging with x-rays (Berg-Barrett, x-ray topography); Advantages and limitations | |
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Oxidation Induced Stacking Faults in Si (OSF) | |
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General aspects; historical development | |
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Role of metal impurities for nucleation | |
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growth kinetics, present status and state of the art in avoidance of OSFs | |
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Epitaxial Silicides 31.1.2000 |
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Overview of epitaxial Silicides | |
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Special role of Ni- and Co-Silicides | |
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Kinetics and phase diagrams | |
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Interface structure | |
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Compliant Substrates 7.2.2000 |
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Problem of misfit, basic concept of compliant substrates | |
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Techniques of waferbonding, special conditions for compliant substrates | |
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State of the art, possibilities and problems | |
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Models for interface reactions and dislocation reshuffling | |
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