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The big advantage of x-ray topography is that it can reveal the defect structure of large samples,
in the case below whole (100 mm) Si wafers. If the negatives are enlarged, details on a 10 µm
scale may be seen. |
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X-ray topography of a Si wafer showing "haze"
(milky area in the upper right half) and dislocation structures. The isolated bright small rectangles are transistors full of dislocations
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Enlargement of an area on the lower left. Some single dislocations are barely
visible; the bright geometric structures correspond to device parts with high densities of dislocations. |
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© H. Föll (Defects - Script)