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The jump rate of a vacancy is identical to that of an atom next to the vacancy.
It was given by |
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n |
= n0 · exp – |
Gm kT |
» n0 ·
exp – | Hm kT |
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The time ta needed so that all the atoms with a vacancy
next to them will make one jump thus is |
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ta | = |
1 n | = |
1 n0 |
· exp |
Hm kT |
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After that time ta,
the fraction of all atoms that had a vacancy a a neighbor, has made one jump. |
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If you now wait another ta, a second
set of atoms can now make a jump. This second set may include atoms from the first set which simply jump back to their old
position, but we ignore this effect for a rough estimate. |
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If all atoms of the crystal are supposed to make one jump, you have to wait for a time tc
that is a defined multiple of ta. It is simply |
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Because the multiplier m is of course the inverse of the vacancy concentration
cV = exp – (HF)/kT) |
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tc is the quantity we we are looking for, it is |
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tc | = |
1 n0 |
· exp |
Hm kT |
· exp |
HF kT |
= | 1
n0 | · exp |
Hm + HF kT |
= | 1
n0 | · exp |
HSD kT |
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With HSD = enthalpy of self diffusion. |
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We may replace
1/n0 by 1/n0 = g · a2/
DSD and use the diffusion coefficient for self-diffusion to obtain values for specific materials,
but lets just look at what we get in a very simple approximation with n0 = 1013
Hz |
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Shown is tc on a (rather far-reaching) log scale
versus Hm + HF = HSD, i.e. the self-diffusion enthalpy HSD,
with the temperature as a parameter. |
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For Hm + HF = 0, tc is
10–13 s - as it should be. |
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For sensible values. e.g. HSD
= 2 eV, you must be very patient at room temperature, but at 800 oC, your crystal has a different
identity after 1 second! Take Si, with HSD
» 5 eV and a melting point of roughly 1700 K, and again no atom will be where
it was after a rather short time. |
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Using better values for n0 from the
self-diffusion coefficient as stated above, just shifts the whole set of curves a "little bit" on the t
- axis and thus tc by the same (logarithmic) amount |
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© H. Föll (Defects - Script)