Pictures to: 4. IBM T.J. Watson Research Center

 

4.3.1 Pictures to Anodic Defect Etching
 
As before, O will supply the pictures in the two publications plus a number of auxiliary ones never published before.
 
First, the two pictures n the letter (ref. 24)
   
 
Anodic defect ertching
Fig. 1 In Publication 24
(a) Si ribbon anodically etched at – 0.4 V. (b) EBIC image of adjacent area, (c) adjacent area etched at + 0.4 V.
   
 
Anodic defect ertching
Fig. 2 In Publication 24
Same area in polycrystalline ASilicon etched chemically (a), anodically at at + 0.4 V. anodically at – 0.4 V(c).
Fig. 2(d) shows the EBIC image of this area.
   
 
Anodic defect ertching
.Parts of Fig. 2 in large format
(Click to enlarge)
The pictrues from the full paper (ref, 22) follow
   
 
Anodic defect ertching in Si
Fig. 2 in ref.22
Fig. 2. Example of anodically etched poly-Si (40 min at OV bias)
 
Fig. 2. Example of anodically etched poly-Si (40 min at OV bias)
Fig. 3 In Publication 1.
 
Fig. 4 In Publication 1
 
Fig. 5 In Publication 1.
 
Fig. 6 In Publication 1
 
Fig. 7 In Publication 1.
 
 
.
 
 
Auxiliary to Fig. 10 In Publication 1.
 
Fig. 10 in Publication 1.

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