Pictures to: 4. IBM T.J. Watson Research Center

 

4.1 TEM of Silicon - Silicide Interfaces    Publication 42

What follows arerthe pictures to publication 42 (Transmission electron microscopy of the formation of nickel silicides.).
Once more, some pictures (FIgs. 12 and 14 in the paper) show the very first high-resolution images of a heterogeneousa interface. No matter what the publication dfate; these "firsts here and in publication 1 were taken around the same time.
     
 
TEM Ni silicide interface
Fig. 1 In Publication 2
Fig. l Diffraction patterns of (a) Ni2Si present after the 300°C annealing and of (b) NiSipresent after the 400°C annealing.
 
TEM Ni silicide interface
Fig. 2 In Publication 2
Fig. 2 Silieide layers on {100} Si (a) after the 300°C annealing and (b) after the 400°Cannealing.
 
TEM Ni silicide interface
Fig. 3 In Publication 2Ì
Fig.3 Diffraction pattern of
(a) epitaxial Ni2Si and NiSi present on {l11} Si after the 300°C annealing and of
(b) epitaxial and polycrystalline NiSi after the 400°C annealingFor details see the text.
 
TEM Ni silicide interface
. Fig. 6 In Publication 2
Fig.6 Silicide layers on {1ll} Si (a) after the 300oC annealing and (b) after the 4000Cannealing
 
TEM Ni silicide interface
Fig. 7 In Publication 2
Fig. 7 Cross-sectional view of (a) Ni2Si on {l00} Si after the 300°C annealing and of (b) NiSi and Ni2Si after the 400°0 annealing. For details see the text
 
TEM Ni silicide interface
Fig. 8 In Publication 2.
Fig.8 C ross-seetional view of (a) Ni2Si and NiSi after the 300°0 annealing and of (b) NiSi after the 400 0C annealing
 
TEM Ni silicide interface
Fig. 9 In Publication 2
Fig.9 Diffraction patterns from cross-sectional specimens. (a) and (b) show thc diffractionpattern of epitaxial Ni2Si and NiSi on {Ill} Si for (a) {ll0} and (b) {ll2}specimen orientation. (c) shows thc diffraction pattern of epitaxial NiSiafter the 400°0 annealing for {II0} specimen orientation. For details see thetext
 
TEM Ni silicide interface
Fig. 11 In Publication 3.
Fig. 11 Dark-field images of the Ni2Si and NiSi on {l11} Si after the 300°C anneal.
(a) wastaken with a NiSi reflection (spot no. 3 in fig. 9 (a)) and
(b) was taken with aNi2Si reflection (spot no. 7 in fig. 9 (a)). ,
 
HRTEM Ni silicide interface
Fig. 12 In Publication 2
Fig. 12 Lattice fringe image of the epitaxial NiSi-Si interface. The dislocation symbolsdenote ending NiSi {l-I00} fringes.
 
TEM Ni silicide interface
Fig. 13 In Publication 2.
Fig. 13 Cross-sectional view of NiSi2 present after the 800 0C anneal Oll (a) {l11} Si and on(b) {l00} Si.
 
HRTEM Ni silicide interface
Fig. 14 In Publication 2
Fig.14 Lattice images of NiSi2-Si interfaces. (a) shows NiSi2 on {l00} Si; a large faceeton a {l00} plane and a small faceet on a {Ill} plane is visible. (b) shows NiSi2on {Ill} Si; the NiSi2 is twinned with respect to the Si matrix
 
TEM Ni silicide interface
Fig. 15 In Publication 2.
Fig. 15 Weak-beam image of the misfit dislocation network in the NiSi 2-Si interface for{lll} oriented substrates. The inset shows an enlarged view of the dislocationnetwork in the area with non-twinned NiSi2 . For details see the text.
   

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