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1 ../kap_1/backbone/r1.html: Contents of Chapter 1
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2 ../kap_1/backbone/r1_1_1.html: 1. Introduction, 1.1 .Why Oh Why? 1.1.1. What it is all about
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3 ../kap_1/backbone/r1_1_2.html: 1.1.2 How to use this Hyperscript
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4 ../kap_1/backbone/r1_2_1.html: 1.1.2 Overview of Content; 1.2.1. Early TEM Work in Stuttgart
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5 ../kap_1/backbone/r1_2_2.html: 1.2.2. TEM Work at Cornell University
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6 ../kap_1/backbone/r1_2_3.html: 1.2.3. Chapter 4 TEM and Other Work at IBM Research
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7 ../kap_1/backbone/r1_2_4.html: 1.2.4 Chapter 5  Research at Siemens in Munich
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8 ../kap_1/backbone/r1_2_5.html: 1.2.5. Research at the Christian-Albrechts-Univesität zu Kiel
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9 ../kap_1/backbone/r1_2_6.html: 1.2.6 Chapter 7  Hyperscripts and Teaching in Kielel
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10 ../index.html: Archive Prof. Helmut Foell
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-11 https://www.tf.uni-kiel.de/matwis/amat/iss/index.html:
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12 ../../iss/kap_4/illustr/s4_1_1d.html:
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13 ../kap_4/illustr/i4_1_1.html: Pictures to: IBM T.J. Watson Research Center
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14 ../../iss/kap_a/advanced/ta_1_1n.html:
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15 ../../iss/kap_b/backbone/rb_5_1.html:
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16 ../kap_1/basics/b1_1_1.html: Something about Me
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17 ../kap_1/basics/b1_1_2.html: H. Föll: List of Publications; Running Number 1 - 60
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18 ../kap_1/backbone/r1_1_1.pdf:
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19 ../check/dec_index.html:
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20 ../check/dec_name.html:
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21 ../check/dec_transl.html:
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22 ../check/dec_abk.html:
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23 ../metamod/i_matrix.html:
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24 ../check/projekt.html:
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25 ../kap_1/basics/b1_1_3.html: H. Föll: List of Publications: Running Number 61 - 120
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26 ../kap_1/backbone/r1_1_2.pdf:
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27 ../kap_2/backbone/r2_1_1.html: 2. Research at the Max-Plank-Institute für Metallforschung, Stuttgart; 2. Ion Irradiating Damage in Co
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28 ../kap_2/backbone/r2_2_1.html: 2.2 2 Agglomerates of Point Defects in Silicon; 2.2.1 Low Temperature Electron Irradiation Damage in Silicon
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29 ../kap_2/backbone/r2_3_1.html: 2.3 Swirl Defects in Si (Investigated in a HVTEM)
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30 ../kap_2/backbone/r2_4_1.html: 2.4 Process Induced Defects in Si Chips (Investigated in a HVTEM)
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31 ../kap_1/backbone/r1_2_1.pdf:
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32 ../kap_3/articles/foe_car_double_ribbon.pdf:
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33 ../kap_3/articles/foe_car_wil_sf_contrast.pdf:
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34 ../kap_1/backbone/r1_2_2.pdf:
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35 ../kap_1/backbone/r1_2_3.pdf:
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36 ../kap_5/articles/leh_foe_60_macropores.pdf:
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37 ../kap_6/articles/135_folchr2002.pdf:
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38 ../kap_5/articles/foe_be_chipmaking_1.pdf:
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39 ../kap_1/backbone/r1_2_4.pdf:
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40 ../kap_1/backbone/r1_2_5.pdf:
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41 ../kap_2/backbone/r2.html: Contents of Chapter 2
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42 ../kap_1/backbone/r1_2_6.pdf:
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43 ../kap_4/illustr/i4_1_1.pdf:
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44 ../kap_4/backbone/r4_1_1.html:
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-45 http://www.tf.uni-kiel.de/matwis/amat/index.html:
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46 ../../iss/kap_2/illustr/i2_1_7.html:
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47 ../kap_1/basics/b1_1_1.pdf:
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49 ../kap_1/basics/b1_1_4.html: H. Föll: List of Publications: Running Number 121 - 180
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50 ../kap_1/basics/b1_1_5.html: H. Föll: List of Publications: Running Number 181 - 240
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51 ../kap_1/basics/b1_1_6.html: H. Föll: List of Publications: Running Number 241 - 300
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52 ../kap_1/basics/b1_1_7.html: H. Föll: List of Publications: Running Number 241 - 300
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53 ../kap_2/articles/foell_e-damage_si.pdf:
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54 ../kap_2/articles/foe_wil_loop_analysis.pdf:
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55 ../kap_2/articles/foe_kol_goettingen_prize.pdf:
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56 ../kap_2/articles/foe_kol_swirl_1.pdf:
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57 ../kap_2/articles/foe_goe_kol__formation_swirl.pdf:
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58 ../kap_2/articles/foe_kol_devices.pdf:
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59 ../kap_2/articles/foe_wil_tem_co.pdf:
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60 ../kap_2/articles/wi_foe_black-white_vector.pdf:
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61 ../kap_3/articles/foe_ast_tem_grain_boundary.pdf:
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62 ../kap_4/articles/foe_anodic_etching_22.pdf:
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63 ../kap_4/articles/foe_anodic_etching_24.pdf:
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64 ../kap_4/articles/foe_ho_tu_tem_silicides.pdf:
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65 ../kap_4/articles/tan_foe_113.pdf:
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66 ../kap_4/articles/tan_foe_kra_interstitial_chain.pdf:
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67 ../kap_4/articles/foe_ho_tu_ni_silicides.pdf:
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68 ../kap_4/articles/foe_ho_oxide_silicides.pdf:
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69 ../kap_5/articles/leh_foe_84_high-speed_characterization.pdf:
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70 ../kap_5/articles/grab_foe_84_s-web.pdf:
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71 ../kap_5/articles/leh_foe_58_elymat.pdf:
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72 ../kap_1/basics/b1_1_2.pdf:
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73 ../kap_3/backbone/r3_1_1.html: 3.1 TEM Work at Cornell University; 3.1 TEM Investigations of Grain Boundaries in Silicon
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74 ../kap_3/backbone/r3_4_1.html: 3.4 Weak Beam Contrast of Stacking Faults in TEM
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75 ../kap_4/illustr/i4_1_4.html: Pictures Intended for the "Lost Book"
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76 ../kap_3/backbone/r3_2_1.html: 3.2 Double Ribbons and Stacking Fault Energies in Si
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77 ../kap_5/articles/foe_be_chipmaking_2.pdf:
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78 ../kap_5/articles/foe_be_chipmaking_3.pdf:
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79 ../kap_5/articles/be_foe_schlue_mega.pdf:
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80 ../kap_5/articles/foe_be_chipmaking_brochure.pdf:
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81 ../kap_1/basics/b1_1_3.pdf:
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82 ../kap_6/backbone/r6_2_2.html: 6.2.2 CELLO Research
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-83 https://www.tf.uni-kiel.de/matwis/amat/def_en/index.html:
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84 ../kap_2/basics/co_1-2.pdf:
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85 ../kap_2/basics/co_3-4.pdf:
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88 ../kap_2/basics/co_9-10.pdf:
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89 ../kap_2/illustr/i2_1_1.html: Regular-Size Pictures to "Radiation Damage in Cobalt"
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90 ../kap_2/backbone/r2_1_2.html: 2.1.2 Details and Pictures
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91 ../kap_2/backbone/r2_1_1.pdf:
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92 ../kap_2/basics/b2_2_1.html: Transmission Electron Microscope (TEM)
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93 ../kap_2/basics/thesis_5.pdf:
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94 ../kap_2/basics/thesis_6-ende.pdf:
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95 ../kap_2/illustr/i2_2_1.html: Pictures to: Low Temperature Electron Irradiation Damage in Silicon
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96 ../kap_2/backbone/r2_1_3.html: 2.1.3 Contrast Theory
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97 ../kap_2/backbone/r2_2_1.pdf:
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98 ../kap_2/illustr/i2_3_1.html: Pictures to: 2.3 Swirl Defects in Si (Investigated in a HVTEM; Part 1
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99 ../kap_2/basics/uli_goesele_laudatio_obituary.pdf:
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100 ../kap_2/illustr/i2_3_2.html: Pictures to: 2.3 Swirl Defects in Si (Investigated in a HVTEM; Part 2
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101 ../kap_2/illustr/i2_3_3.html: Pictures to: 2.3 Swirl Defects in Si (Investigated in a HVTEM); Part 3
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102 ../kap_2/backbone/r2_3_1.pdf:
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103 ../kap_2/basics/b2_4_1.html: Kristallfehler in hochintegrierten Schaltkreisen aus Silizium
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104 ../kap_2/illustr/i2_4_1.html: Pictures to: Kristallfehler in hochintegrierten Schaltkreisen aus Silizium   Part 1
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105 ../kap_2/illustr/i2_4_2.html: Pictures to: Kristallfehler in hochintegrierten Schaltkreisen aus Silizium    Part 2
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106 ../kap_2/illustr/i2_4_3.html: Pictures to: Kristallfehler in hochintegrierten Schaltkreisen aus Silizium    Part 3
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107 ../kap_2/illustr/i2_4_4.html: Additional Pictures to: Process Induced Defects in Si Chips
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108 ../kap_3/backbone/r3.html: Contents of Chapter 3
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109 ../kap_2/backbone/r2_4_1.pdf:
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110 ../kap_4/basics/b4_1_1.html: Something More About Me
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111 ../kap_4/basics/b4_1_2.html:
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112 ../kap_4/articles/book_unpublished_1.pdf:
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114 ../kap_4/illustr/i4_1_5.html: Pictures to: IBM T.J. Watson Research Center ; Pictures in "Minor" Publications
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115 ../kap_4/illustr/i4_1_2.html: Pictures to: 4. IBM T.J. Watson Research Center ; 4.1 TEM of Silicon - Silicide Interfaces    Part 2
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116 ../kap_4/illustr/i4_1_3.html: Pictures to: 4. IBM T.J. Watson Research Center; 4.1 TEM of Silicon - Silicide Interfaces    Part 3
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117 ../kap_4/backbone/r4.html: Contents of Chapter 4
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118 ../kap_4/backbone/r4_2_1.html: 4.2 TEM of Defects Produced by Ion Implantation
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119 ../kap_4/backbone/r4_1_1.pdf:
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120 ../kap_6/articles/150_follan2003a.pdf:
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121 ../kap_1/basics/b1_1_4.pdf:
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125 ../kap_6/articles/241_fft_phys_stat_sol_2008.pdf:
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126 ../kap_6/articles/280_ollei2010.pdf:
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127 ../kap_6/articles/293_follei2011.pdf:
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128 ../kap_6/articles/294_ecs_li_anode.pdf:
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129 ../kap_1/basics/b1_1_6.pdf:
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130 ../kap_5/backbone/r5_1_1.html: 5. Siemens Research Munich; 5.1 Solar Cell Research; 5,1,1 1 Introduction
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131 ../kap_1/basics/b1_1_7.pdf:
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132 ../kap_3/illustr/i3_1_1.html: Pictures to: 3. TEM Work at Cornell University; 3.1.1. TEM Investigations of Grain Boudnaries in Silicon
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133 ../kap_3/illustr/i3_1_2.html: Pictures to: 3.1 TEM Work at Cornell University; 3.1.1. TEM Investigations of Grain Boundaries in Silicon
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134 ../kap_3/illustr/i3_1_3.html: Pictures to: 3.1 TEM Work at Cornell University; 3.1.1. TEM Investigations of Grain Boundaries in Silicon
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135 ../kap_3/backbone/r3_1_1.pdf:
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137 ../kap_3/backbone/r3_3_1.html: 3.3 Defects in EFG Si Ribbons
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147 ../kap_6/backbone/r6_3_1.html: 6.3 All Other Research; 6.3.1 Putting an End to It
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148 ../kap_6/backbone/r6_2_2.pdf:
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166 ../kap_2/illustr/i2_4_7.html: Pictures to Siemens Report 2: Crystal Lattice Defects in Integrated Silicon Devices, in particular with respect to very large integration (VLSI)
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172 ../kap_2/illustr/i2_4_6.html: Additional Pictures to: Process Induced Defects in Si Chips
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173 ../kap_2/illustr/i2_4_4.pdf:
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180 ../kap_4/backbone/r4_3_1.html: 4.3. Anodic Defect Etching
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181 ../kap_4/illustr/i4_2_1.html: Pictures to: 4. IBM T.J. Watson Research Center; 4.2 TEM of Defects Produced by Ion Implantation
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182 ../kap_4/backbone/r4_2_1.pdf:
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187 ../kap_5/basics/b5_1_2.html: S-Web Reports
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188 ../kap_5/basics/lehmann_diploma.pdf:
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190 ../kap_5/illustr/i5_1_1.html: Pictures to: 5. Siemens Research Munich; 5.1 Solar Cell Research
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191 ../kap_5/backbone/r5.html: Contents of Chapter 5
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192 ../kap_5/backbone/r5_2_1.html: 5.2 ELYMAT, 5.2.1 Introduction
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198 ../kap_3/basics/b3_1_1.html: Solar Cell Development
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199 ../kap_3/basics/report_3.3.pdf:
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205 ../kap_6/illustr/i6_2_1.html: Pictures to: 6.2.1 ELYMAT
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206 ../kap_6/backbone/r6_1_1.html: 6. Christian-Albrechts-Univesität; zu Liel. Technische Fakultät; Research
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213 ../kap_6/illustr/i6_3_1.html: Pictures to: 6.3 Pores in Semiconductors
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214 ../kap_7/backbone/r7.html: Contents of Chapter 7
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222 ../kap_4/illustr/i4_3_1.html: 4.3.1 Pictures to Anodic Defect Etching
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238 ../kap_5/backbone/r5_3_1.html: 5.3 Pore Etching
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239 ../kap_5/backbone/r5_4_1.html: 5.4 Microchip Development
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240 ../kap_5/basics/b5_2_1.html: The History of the ELYMAT
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252 ../kap_6/backbone/r6.html: Contents of Chapter 6
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256 ../kap_7/backbone/r7_1_3.html: 7.1.3 Hyperscript Structure - Content
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257 ../kap_7/backbone/r7_1_4.html: 7.1.4 Hyperscript Structure - Technical
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258 ../kap_7/backbone/r7_1_5.html: 7.1.5 Hyperscript Structure - Technical
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272 ../kap_7/basics/b7_1_2.html: Konzept von "`Defekt in Kristallen"
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273 ../kap_7/basics/b7_1_3.html: Stand von VIN (Vorlesung im Netz), ein Projekt an der UNI-Kiel. Modofoizeirt 20.5./Fö; muß laufend erneuert werden
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314 ../kap_7/articles/multimedi_praxis.html: Multimedia in der Lehre: Hyperskripte in der Praxis
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PICTURE-Files

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From : 1, 2, 3, 4, 5, 6, 7, 8, 9, 13, 16, 17, 25, 27, 28, 29, 30, 41, 44, 49, 50, 51, 52, 73, 74, 75, 76, 82, 89, 90, 92, 95, 96, 98, 100, 101, 103, 104, 105, 106, 107, 108, 110, 111, 114, 115, 116, 117, 118, 130, 132, 133, 134, 136, 137, 141, 145, 146, 147, 149, 166, 171, 172, 180, 181, 183, 187, 190, 191, 192, 198, 200, 205, 206, 213, 214, 221, 222, 238, 239, 240, 251, 252, 255, 256, 257, 258, 263, 266, 271, 272, 273,
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9 ../kap_1/illustr/co_color_small_2.jpg
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10 ../kap_1/illustr/si_irradiation_small.jpg
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11 ../kap_1/illustr/swirl.jpg
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12 ../kap_1/illustr/tangle_large.jpg
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13 ../kap_1/illustr/grain_boundary.jpg
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14 ../kap_3/illustr/double_ribbon_2.jpg
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15 ../kap_3/illustr/efg_1.jpg
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16 ../kap_3/illustr/sf_con_0.jpg
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17 ../kap_4/illustr/pdsi_1.jpg
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18 ../kap_4/illustr/ion_damage_compound.jpg
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19 ../kap_4/illustr/anodic_etch_small_22.jpg
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20 ../kap_5/illustr/s-wweb_small.jpg
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21 ../kap_5/illustr/elymat_4.jpg
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22 ../kap_5/illustr/macropores_small.jpg
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23 ../kap_5/illustr/me_cross_sections_small.jpg
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24 ../kap_6/illustr/elymat_small.jpg
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25 ../kap_6/illustr/cello_small.jpg
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26 ../kap_6/illustr/3dim_pore_crystal_small.jpg
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27 ../kap_4/illustr/silicide_interface_1.jpg
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28 ../kap_4/illustr/silicide_interface_2.jpg
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36 ../kap_4/illustr/silicide_interface_8.jpg
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37 ../kap_4/illustr/silicide_interface_9.jpg
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38 ../kap_4/illustr/silicide_interface_10.jpg
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39 ../kap_4/illustr/silicide_interface_10a.jpg
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40 ../kap_4/illustr/silicide_interface_11.jpg
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41 ../styles/zu_zu.png
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42 ../kap_1/illustr/cantemir.jpg
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43 ../kap_1/illustr/cheers.jpg
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44 ../kap_2/styles/kugel1.png
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45 ../kap_4/styles/kugel1.png
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46 ../kap_1/styles/kugel1.png
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47 ../kap_3/styles/kugel1.png
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48 ../kap_4/illustr/lost_book_1.jpg
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51 ../kap_4/illustr/lost_book_9a.jpg
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52 ../kap_4/illustr/lost_book_15.jpg
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53 ../kap_4/illustr/oxide_silicide_3.jpg
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54 ../kap_4/illustr/oxide_silicide_7.jpg
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55 ../kap_4/illustr/oxide_silicide_1.jpg
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59 ../kap_4/illustr/lost_book_23.jpg
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60 ../kap_4/illustr/ni_silicide_7.jpg
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61 ../kap_4/illustr/ni_silicide_8.jpg
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62 ../kap_4/illustr/lost_book_25.jpg
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63 ../kap_4/illustr/ni_silicide_11.jpg
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76 ../kap_4/illustr/lost_book_41b.jpg
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77 ../kap_4/illustr/lost_book_41.jpg
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78 ../kap_2/illustr/co_thesis__4-1_small.jpg
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79 ../kap_2/illustr/co_thesis__4-2_small.jpg
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80 ../kap_2/illustr/co_thesis__4-3_small.jpg
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82 ../kap_2/illustr/co_thesis__4-5_small.jpg
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87 ../kap_2/illustr/co_thesis__5-6_small.jpg
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88 ../kap_2/illustr/co_thesis__5-7,8_small.jpg
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89 ../kap_2/illustr/co_thesis__5-9_small.jpg
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90 ../kap_2/illustr/co_thesis__9-3_small.jpg
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91 ../kap_2/illustr/co_thesis__9-4_small.jpg
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92 ../kap_2/illustr/co_thesis__9-x_small.jpg
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93 ../kap_2/illustr/co_thesis__9-y_small.jpg
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94 ../kap_2/illustr/hvtem.jpg
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95 ../kap_2/illustr/elmiskop_102.jpg
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96 ../kap_2/illustr/e-damage_5.1.jpg
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97 ../kap_2/illustr/e-damage_5.2.jpg
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98 ../kap_2/illustr/e-damage_5.3.jpg
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107 ../kap_2/illustr/e-damage_6.1.jpg
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108 ../kap_2/illustr/e-damage_add_1.jpg
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110 ../kap_2/illustr/e-damage_add_3.jpg
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113 ../kap_2/illustr/swirl_1.jpg
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115 ../kap_2/illustr/swirl_3b.jpg
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133 ../kap_2/illustr/swirl_21.jpg
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134 ../kap_2/illustr/aux_swirl_7.jpg
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153 ../kap_2/illustr/aux_swirl_12.jpg
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154 ../kap_2/illustr/ic_aux_1.jpg
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155 ../kap_2/illustr/report_2_abb_4.jpg
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258 ../kap_4/illustr/lost_book_3_aux.jpg
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259 ../kap_4/illustr/aux_silicied_4.jpg
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260 ../kap_4/illustr/ni_silicide_1.jpg
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261 ../kap_4/illustr/ni_silicide_2.jpg
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264 ../kap_4/illustr/ni_silicide_9.jpg
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266 ../kap_4/illustr/ni_silicide_13.jpg
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267 ../kap_4/illustr/ni_silicide_14.jpg
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268 ../kap_4/illustr/ni_silicide_15.jpg
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269 ../kap_4/illustr/oxide_silicide_2.jpg
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270 ../kap_4/illustr/oxide_silicide_6.jpg
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271 ../kap_3/illustr/gb_fig_2.jpg
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275 ../kap_3/illustr/gb_fig_4jpg.jpg
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300 ../kap_3/illustr/gb_fig_14.jpg
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303 ../kap_3/illustr/gb_fig_15.jpg
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306 ../kap_3/illustr/gb_aux_7.jpg
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309 ../kap_3/illustr/sf_con_1.jpg
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310 ../kap_3/illustr/sf_con_2.jpg
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311 ../kap_3/illustr/sf_con_aux_1.jpg
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312 ../kap_3/illustr/sf_con_aux_2.jpg
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313 ../kap_3/illustr/sf_con_3.jpg
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320 ../kap_3/illustr/efg.png
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321 ../kap_3/illustr/double.ribbon_3.jpg
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322 ../kap_3/illustr/double_r_2.jpg
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325 ../kap_3/illustr/double_r_5.jpg
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328 ../kap_2/illustr/co_thesis__4-1.jpg
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388 ../kap_5/illustr/s-wweb_1.jpg
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389 ../kap_5/illustr/s-wweb_3.jpg
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390 ../kap_5/illustr/s-wweb_5.jpg
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391 ../kap_5/illustr/s-wweb_6.jpg
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392 ../kap_5/illustr/s-web_back.jpg
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393 ../kap_5/illustr/s-web_front.jpg
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394 ../kap_5/illustr/s-wweb_7.jpg
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395 ../kap_5/illustr/s-wweb_8.jpg
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396 ../kap_5/illustr/analytics_3.jpg
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397 ../kap_5/illustr/analytics_5.jpg
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408 ../kap_3/illustr/imp_solarefficiency.png
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411 ../kap_3/illustr/ribbon_diverse.png
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412 ../kap_3/illustr/s_web.png
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413 ../kap_3/illustr/s_web_composite.png
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425 ../kap_6/illustr/elymat_2.jpg
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426 ../kap_6/illustr/elymat_1.jpg
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427 ../kap_6/illustr/280_macroporen_durchgehend.jpg
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428 ../kap_6/illustr/inp_pore_crystal.jpg
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429 ../kap_6/illustr/inp_pore_crasytal_2.jpg
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430 ../kap_6/illustr/current_oscil_space.jpg
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431 ../kap_6/illustr/frustated_crystal.jpg
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435 ../kap_6/illustr/growth_mode_transitiom_1.jpg
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436 ../kap_6/illustr/3dim_pore_crystal.jpg
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437 ../kap_6/illustr/waveguide.jpg
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438 ../kap_4/illustr/anodic_etch_1.jpg
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455 ../kap_4/illustr/anodic_aux_7.jpg
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457 ../kap_4/illustr/anodic_etch_aux_1.jpg
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458 ../kap_4/illustr/anodic_aux_4.jpg
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459 ../kap_4/illustr/anodic_aux_5.jpg
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460 ../kap_4/illustr/psl.jpg
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461 ../kap_5/illustr/macropores_1.jpg
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462 ../kap_7/illustr/file_structure.png
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463 ../kap_5/illustr/macropores_2.jpg
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465 ../kap_5/illustr/macropores_5.jpg
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467 ../kap_5/illustr/me_particle_1.jpg
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483 ../kap_7/illustr/image1.png
From : 272,

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